CMBD4148 [CDIL]
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES; 硅平面外延高速二极管
| 型号： | CMBD4148 |
| 厂家： | 
Continental Device India Limited |
| 描述： | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1201, 1202, CMBD4148 are all single diodes
CMBD1203 is a dual diode, in series
CMBD1204 is a dual diode, common cathode
CMBD1205 is a dual diode, common anode
Marking
PACKAGE OUTLINE DETAILS
CMBD1201 – 24
CMBD1202 – 25
CMBD1203 – 26
CMBD1204 – 27
CMBD1205 – 28
CMBD4148 – 5H
ALL DIMENSIONS IN mm
2
1
CMBD1201
3
CMBD4148
1
2
CMBD1202
3
2
1
CMBD1203
3
2
1
CMBD1204
3
2
1
CMBD1205
3
ABSOLUTE MAXIMUM RATINGS (per diode)
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Forward current
V
V
I
I
max.
max.
max.
max.
max.
<
75 V
100 V
500 mA
215 mA
150 ° C
0.855 V
R
RRM
FRM
F
Junction temperature
T
j
V
F
Forward voltage at I = 10 mA
F
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
Reverse recovery time when switched from
= 10 mA to I = 10 mA; R = 100 Ω;
I
F
R
L
measured at I = 1 mA
t
<
4 ns
R
rr
RATINGS (per diode) (at T = 25°C unless otherwise specified)
A
Limiting values
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Forward current
V
V
I
I
max.
max.
max.
max.
75 V
100 V
500 mA
215 mA
R
RRM
FRM
F
Non-repetitive peak forward current (per crystal)
t = 1 µs
t = 1 ms
t = 1 s
Storage temperature
Junction temperature
I
max.
max.
max.
–55 to +150 ° C
max.
4 A
1.0 A
0.5 A
FSM
I
FSM
I
FSM
Tstg
Tj
150 ° C
THERMAL RESISTANCE
From junction to ambient
R
=
500 K/ W
th j–a
CHARACTERISTICS (per diode)
T
= 25 °C unless otherwise specified
j
Forward voltage
I
F
I
F
I
F
= 10 mA
= 200 mA
= 10 mA
V
V
V
<
<
<
0.855 V
1.05 V
1.0 V
F
F
F
CMBD4148
Reverse currents
V
R
V
R
V
R
= 20 V
= 75 V
= 25 V; T = 150 °C
I
I
I
<
<
<
25 nA
5 µA
30 µA
R
R
R
j
Forward recovery voltage
= 10 mA; t = 20 ns
I
F
V
Q
C
<
<
<
1.75 V
45 pC
2 pF
p
fr
Recovery charge
= 10 mA to V = 5V; R = 100 Ω
I
F
R
s
Diode capacitance
= 0; f = 1 MHz
V
R
d
Reverse recovery time when switched from
= 10 mA to I = 10 mA; R = 100 Ω;
I
F
R
L
measured at I = 1 mA
t
<
4 ns
R
rr
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
mail@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
©2020 ICPDF网 联系我们和版权申明