CMBD4150 [CDIL]
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE; 硅平面外延高速二极管
| 型号： | CMBD4150 |
| 厂家： | 
Continental Device India Limited |
| 描述： | SILICON PLANAR EPITAXIAL HIGH SPEED DIODE |
| 文件： | 总3页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBD4150
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
Marking
CMBD4150 = D18
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = ANODE
2 = NC
3 = CATHODE
2
1
3
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
V
V
50
75
V
V
R
max.
max.
max.
RRM
I
600 mA
150 ° C
FRM
T
j
Peak forward surge current
T = 1 msec.
I
max.
max.
4
0.5
A
A
FSM
T = 1 sec.
I
FSM
Reverse recovery time when switched from
I
F
= 400 mA to I = 400 mA; R = 100 W
R L
measured at I = 4 mA
T
T
max.
6
ns
R
rr
RATINGS (at T = 25 °C, unless otherwise specified)
A
Storage Temperature
–55 to +150 ° C
stg
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBD4150
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500 K/ W
CHARACTERISTICS (at T = 25 °C, unless otherwise specified)
A
Continuous reverse voltage
Repetitive peak reverse voltage
Forward current (d.c.)
Repetitive peak forward current
Non–repetitive peak forward current
T = 1 msec
V
V
max.
max.
max.
max.
50
75
V
V
R
RRM
I
I
300 mA
600 mA
F
FRM
I
max.
max.
4
0.5
A
A
FSM
T = 1 sec
I
FSM
Diode capacitance
V
= 0; f = 1 MHz
C
max.
2.5 pF
R
D
F
Forward voltage
min.
540 mV
620 mV
I
F
I
F
I
F
= 1 mA
= 10 mA
= 50 mA
V
V
V
max.
min.
660 mV
740 mV
F
F
max.
min.
760 mV
860 mV
max.
min.
820 mV
920 mV
I
I
= 100 mA
= 200 mA
V
V
F
F
F
max.
min.
870 mV
F
max.
1
V
V
Reverse breakdown voltage
= 100 mA
I
R
V
BR
min
75
Reverse voltage leakage current
= 50 V
V
R
I
I
max.
max.
max.
100 nA
R
Reverse current
= 50 V; T = 150 °C
V
R
100 mA
j
R
Forward recovery voltage
when switched to I = 10 mA; t = 20 nsec.
V
FR
1.75
V
F
P
Reverse recovery time
I
F
I
F
= I = 10 – 200 mAdc, R = 100 W
t
t
max.
max.
4
6
ns
ns
R
L
rr
rr
= I = 200 – 400 mAdc, R = 100 W
R
L
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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