CMBD914N3 [CYSTEKEC]

High -Speed switching diode; 高倍速开关二极管
CMBD914N3
型号: CMBD914N3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

High -Speed switching diode
高倍速开关二极管

二极管 开关
文件: 总4页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C303N3  
Issued Date : 2003.04.12  
Revised Date  
CYStech Electronics Corp.  
Page No. : 1/4  
High –speed switching diode  
CMBD914N3  
Description  
The CMBD914N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in  
the small SOT-23 plastic SMD package.  
Equivalent Circuit  
CMBD914N3  
SOT-23  
2
1
Cathode  
3
1Anode  
2Not Connected  
3Cathode  
NC  
Anode  
Features  
Small plastic SMD package  
High switching speed: max. 4ns  
Continuous reverse voltage: max. 70V  
Repetitive peak reverse voltage: max. 85V  
Repetitive peak forward current: max. 500mA.  
Applications  
High-speed switching in thick and thin-film circuits.  
CMBD914N3  
CYStek Product Specification  
Spec. No. : C303N3  
Issued Date : 2003.04.12  
Revised Date  
CYStech Electronics Corp.  
Page No. : 2/4  
Absolute Maximum Ratings @TA=25℃  
Parameters  
Repetitive peak reverse voltage  
Continuous reverse voltage  
Continuous forward current  
Repetitive peak forward current  
Non-repetitive peak forward current  
@square wave, Tj=125prior to surge t=1µs  
t=1ms  
Symbol  
VRRM  
VR  
Min  
Max  
85  
Unit  
V
-
-
-
70  
V
IF  
200  
500  
mA  
mA  
IFRM  
-
-
-
4
1
A
A
IFSM  
0.5  
250  
150  
+150  
A
t=1s  
Total power dissipation(Note 1)  
Junction Temperature  
Ptot  
Tj  
Tstg  
mW  
°C  
°C  
-
Storage Temperature  
-65  
Note 1: Device mounted on an FR-4 PCB.  
Electrical Characteristics @ Tj=25unless otherwise specified  
Parameters Symbol Conditions  
Min Typ. Max Unit  
IF=1mA  
715 mV  
IF=10mA  
855 mV  
Forward voltage  
VF  
-
-
-
-
IF=50mA  
1
V
V
nA  
µA  
µA  
µA  
IF=150mA  
VR=25V  
1.25  
30  
VR=75V  
1
Reverse current  
IR  
VR=25V,Tj=150℃  
30  
50  
VR=75V,Tj=150℃  
Diode capacitance  
Cd  
trr  
VR=0V, f=1MHz  
-
-
-
-
1.5  
pF  
when switched from IF=10mA to  
IR=10mA,RL=100, measured  
at IR=1mA  
when switched from IF=10mA  
tr=20ns  
Reverse recovery time  
4
ns  
Forward recovery voltage  
Vfr  
-
-
1.75  
V
Thermal Characteristics  
Symbol  
Parameter  
Conditions  
Value  
Unit  
Rth,j-tp  
Rth, j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
360  
500  
/W  
/W  
Note 1  
Note 1: Device mounted on an FR-4 PCB.  
CMBD914N3  
CYStek Product Specification  
Spec. No. : C303N3  
Issued Date : 2003.04.12  
Revised Date  
CYStech Electronics Corp.  
Page No. : 3/4  
Characteristic Curves  
Capacitance&Reverse-BiasedVoltage
Capacitance & Reverse-Biased Voltage  
1
1
0.1  
0.1  
100  
0.1  
1
10  
0.1  
1
10  
100  
R
ReverseBiased Voltage-V(V)  
R
Reverse Biased Voltage-V (V)  
Power Derating  
300  
250  
200  
150  
100  
50  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ta(oC ), Ambient Temperature  
CMBD914N3  
CYStek Product Specification  
Spec. No. : C303N3  
Issued Date : 2003.04.12  
Revised Date  
CYStech Electronics Corp.  
Page No. : 4/4  
SOT-23 Dimension  
Marking:  
A
L
5H  
3
S
B
1
2
3-Lead SOT-23 Plastic  
Surface Mounted Package  
CYStek Package Code: N3  
V
G
Style:Pin.1. Anode 2. Not Connected  
3.Cathode  
C
D
K
H
J
*: Typical  
Inches  
Millimeters  
Inches  
Min. Max.  
Millimeters  
DIM  
DIM  
Min.  
Max.  
Min.  
Max.  
3.04  
1.60  
1.30  
0.50  
2.30  
0.10  
Min.  
0.085  
0.32  
0.85  
2.10  
0.25  
Max.  
0.177  
0.67  
1.15  
2.75  
0.65  
A
B
C
D
G
H
0.1102 0.1204  
0.0472 0.0630  
0.0335 0.0512  
0.0118 0.0197  
0.0669 0.0910  
0.0005 0.0040  
2.80  
1.20  
0.89  
0.30  
1.70  
0.013  
J
K
L
0.0034 0.0070  
0.0128 0.0266  
0.0335 0.0453  
0.0830 0.1083  
0.0098 0.0256  
S
V
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy ; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
CMBD914N3  
CYStek Product Specification  

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