SST211 [CALOGIC]
FAST DMOS FET Switches N-Channel Enhancement-Mode; FAST DMOS FET开关N沟道增强模式
| 型号： | SST211 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | FAST DMOS FET Switches N-Channel Enhancement-Mode |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST DMOS FET Switches
N-Channel Enhancement-Mode
CORPORATION
SST211 / SST213 / SST215
FEATURES
DESCRIPTION
High Speed Switching. . . . . . . . . . . . . . . . . . . . td(ON) 1ns
Low Capacitance . . . . . . . . . . . . . . . . . . . . . 2.4pF typical
Low ON Resistance. . . . . . . . . . . . . . . . . . . . 50Ω typycal
High Gain
Designed for audio, video and high frequency applications,
the SST211 Series is a high speed, ultra low capacitance
SPST analog switch. Utilizing Calogic’s proprietary DMOS
processing the SST211 Series features an integrated zener
diode designed to protect the gate from electrical over stress.
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•
•
•
Surface Mount Package
•
APPLICATIONS
ORDERING INFORMATION
Ultra High Speed Analog Switching
Sample and Hold
Multiplexers
High Gain Amplifiers
Part
Package
Temperature Range
•
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
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SST211 SOT-143 Surface Mount
SST213 SOT-143 Surface Mount
SST215 SOT-143 Surface Mount
XSST211 Sorted Chips in Carriers
XSST213 Sorted Chips in Carriers
XSST215 Sorted Chips in Carriers
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•
PIN CONFIGURATION
SCHEMATIC DIAGRAM
DRAIN
(2)
3
BODY
(4)
2
GATE
(3)
4
CD1-1
1
SOURCE
(1)
PRODUCT MARKING
SST211
211
213
215
SST213
SST215
SST211 / SST213 / SST215
CORPORATION
ABSOLUTE MAXIMUM RATINGS (Tc = +25oC unless otherwise noted)
Parameter
Breakdown Voltages
SST211
SST213
SST215
Unit
VDS
VSD
VDB
VSB
VGS
+30
+10
+30
+15
-15
+25
-0.3
+25
-30
+10
+10
+15
+15
-15
+25
-0.3
+25
-15
+20
+20
+25
+25
-25
+30
-0.3
+30
-25
V
V
V
V
V
V
V
V
V
V
VGB
VGD
+25
+25
+30
ID Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA
PT Power Dissipation (at or below Tc = +25oC) . . . . 360mW
Linear Derating Factor3.6mW/ o
Tj Operating Junction Temperature Range . . -55 to +125oC
TS Storage Temperature Range . . . . . . . . . . . -55 to +150oC
ELECTRICAL CHARACTERISTICS (Tc = +25oC unless otherwise noted)
SST211
SST213
SST215
SYMBOL
STATIC
CHARACTERISTICS
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
30 35
ID = 10µA, VGS = VBS = 0
ID = 10nA, VGS = VBS = -5V
IS = 10nA, VGD = VBD = -5V
Drain-Source
Breakdown Voltage
BVDS
10 25
10 25
10
20 25
20
BVSD
BVDB
Source-Drain Breakdown Voltage 10
V
Drain-Body
15
ID = 10nA, VGB = 0 Source
15
15
25
25
Breakdown Voltage
OPEN
Source-Body
15
BVSB
IS = 10µA, VGB = 0 Drain OPEN
Breakdown Voltage
0.2 10
0.6 10
10
0.2 10
VDS = 10V
VDS = 20V
VSD = 10V
VSD = 20V
VGB = 25V
VGB = 30V
Drain-Source
OFF Current
ID(OFF)
VGS = VBS = -5V
VGD = VBD = -5V
VDB = VSB = 0
0.2 10
nA
0.6 10
10
Source-Drain
OFF Current
IS(OFF)
0.6 10
10
Gate-Body
Leakage Current
IGBS
µA
V
VGS(th)
rds(on)
Gate Threshold Voltage
0.5 1.0 2.0 0.1
50 70
2.0 0.1 1.0 2.0
VDS = VGS, ID = 1µA, VSB = 0
Drain-Source 1
ON Resistance
ID = 1mA
SB = 0
50 70
50 70
30 45
VGS = 5V
ohms
V
30 45
30 45
V
GS = 10V
DYNAMIC
Common-Source 1
Foward Transcond.
V
DS = 10V, ID = 20mA
gfs
10 12
2.4 3.5
10 12
10 12
mS
pF
f = 1KHz, VSB = 0
C(gs + gd + gb) Gate Node Capacitance
2.4 3.5
1.3 1.5
3.5 4.0
0.3 0.5
0.7 1.0
0.8 1.0
10
2.4 3.5
1.3 1.5
3.5 4.0
0.3 0.5
0.7 1.0
0.8 1.0
10
VDS = 10V
C(gd + db)
C(gs + sb)
C(dg)
Drain Node Capacitance
Source Node Capacitance
Reverse Transfer Capacitance
Turn ON Delay Time
Rise Time
1.3 1.5
3.5 4.0
0.3 0.5
0.7 1.0
0.8 1.0
10
VGS = VBS = -15V
f = 1MHz
td(ON)
tr
VDD = 5V, VG(ON) = 10V
ns
RL = 680, RG = 51
t(OFF)
Turn OFF Time
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Characteristics: See SD211-215 Series
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