SST213DE [MICROSS]
N-Channel DMOS Switch - Zener Protected;
| 型号： | SST213DE |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | N-Channel DMOS Switch - Zener Protected |
| 文件： | 总1页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST211 / 213 / 215
SST211DE / SST213DE / SST215DE N-Channel DMOS Switch - Zener Protected
Description:
Features:
The SST211DE / SST213DE / SST215DE are enhancement‐mode
MOSFETs designed for high speed low‐glitch switching in audio, video
and high‐frequency applications. The family is normally used for ±5V
analog switching or as a high speed driver of the SD214. These
MOSFETs utilize lateral construction to achieve low capacitance and
ultra‐fast switching speeds. An integrated Zener diode provides ESD
protection A poly‐silicon gate is featured for manufacturing reliability.
Ultra‐High Speed Switching—tON: 1ns
Ultra‐Low Reverse Capacitance: 0.2pF
Low Guaranteed RDS @5V
Low Turn‐On Threshold Voltage (1.5V max)
N‐Channel Enhancement Mode
Benefits:
High‐Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
See SST5000 and SST54000 series for quad configurations.
For non‐zener protected versions see SST210DE / SST214DE series
Single Supply Operation & Simple Driver Requirement
Availability:
Pinout:
Applications:
SST211DE / SST213DE / SST215DE – TO‐253 (SOT‐143)
Fast Analog Switching
Top
View
Fast Sample & Holds
Pixel‐Rate Switching
DAC Deglitchers
SST211DE / SST213DE / SST215DE ‐ Bare die form
Contact Micross for full package dimensions
High‐Speed Driver
MAXIMUM RATINGS
LIMIT IN VOLTS
MAXIMUM RATINGS
(Continued)
Drain Current
Lead Temperature (1/16” from ease, 10s)
Storage Temperature
LIMIT
UNIT
SST211
‐30/25
‐0.3/25
30
10
30
SST213
‐15/25
‐0.3/25
10
10
15
SST215
‐25/30
‐0.3/30
20
20
25
Gate‐Drain, Gate‐Source Voltage
Gate‐Substrate Voltage
Drain‐Source Voltage
50
300
‐65 to 150
‐55 to 125
mA
°C
°C
Source‐Drain Voltage
Drain ‐Substrate Voltage
Source‐Substrate Voltage
Operating Junction Temperature
Power Dissipation
Derate 3mW/C° above 25°C
°C
300
mW
15
15
25
LIMITS
SST213DE
MIN MAX
ELECTRICAL SPECIFICATION
TA = 25°C unless otherwise noted
DRAIN‐SOURCE BREAKDOWN
SYMBOL
TEST CONDITIONS
TYP
UNIT
SST211DE
MIN MAX
SST215DE
MIN
MAX
Click To Buy
V(BR)DS
VGS = VBS = 0V, ID = 10µA
VGS = VBS = ‐5V, ID = 10nA
VGD = VBD = ‐5V, IS = 10nA
35
30
22
30
10
10
‐
‐
‐
‐
‐
‐
‐
‐
‐
VOLTAGE
10
10
20
20
‐
‐
SOURCE‐DRAIN BREAKDOWN
VOLTAGE
DRAIN‐SUBSTRATE BREAKDOWN
VOLTAGE
SOURCE‐SUBSTRATE BREAKDOWN
VOLTAGE
V(BR)SD
V(BR)DBO
V(BR)SBO
IDS(off)
V
VGB = 0V, ID = 10nA
Source Open
VGB = 0V, IS = 10µA
Drain Open
35
15
‐
15
‐
25
‐
‐
35
15
‐
15
‐
25
DRAIN‐SOURCE LEAKAGE
VGS=VBS =‐5V
VDS = 10V
VDS = 20V
0.4
0.9
0.5
1
‐
‐
‐
‐
‐
10
‐
10
‐
‐
‐
‐
‐
‐
10
‐
10
‐
‐
‐
‐
‐
‐
‐
10
‐
10
100
nA
SOURCE‐DRAIN LEAKAGE
ISD(off)
VGD =VBD=‐5V VSD = 10V
VSD = 20V
VDB = VSB = 0V , VGB = 30V
GATE LEAKAGE
IGBS
0.01
100
100
THRESHOLD VOLTAGE
VGS(th)
VDS =VGS , ID = 1µA, VSB = 0V
0.8
0.5
1.5
0.1
1.5
0.1
1.5
V
VGS = 5V
VGS = 10V
VGS = 15V
VGS = 20V
VGS = 25V
60
40
30
26
24
10.5
0.9
2.5
1.1
3.7
0.2
0.5
0.6
2
‐
‐
‐
‐
‐
9
‐
‐
‐
‐
‐
‐
‐
‐
75
50
‐
‐
‐
‐
‐
‐
‐
‐
9
‐
‐
‐
‐
‐
‐
‐
‐
‐
75
50
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
-
-
-
75
50
‐
‐
‐
DRAIN‐SOURCE‐ON RESISTANCE
RDS(on)
V
SB = 0V
Ω
ID = 1mA
FORWARD TRANSCONDUCTANCE
gfs
gos
C(GS+GD+GB)
C(GD+GB)
C(GS+SB)
Crss
tD(on)
tr
tD(off)
tf
VDS = 10V, VSB = 0V
ID = 20mA, f = 1kHz
‐
‐
‐
‐
9
9
mS
pF
GATE NODE CAPACITANCE
DRAIN NODE CAPACITANCE
SOURCE NODE CAPACITANCE
REVERSE TRANSFER CAPACITANCE
TURN‐ON TIME
3.5
1.5
5.5
0.5
1
1
‐
‐
3.5
1.5
5.5
0.5
1
1
‐
‐
3.5
1.5
5.5
0.5
1
1
-
-
VDS = 10V, f= 1MHz
V
GS = VBS = ‐15V
VSB = 0V, VIN 0 to 5V,
RG = 25Ω, VDD = 5V RL =
680Ω
ns
TURN‐OFF TIME
This is trial version ‐
6
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