首页 |元器件品牌

SST211-T1 [VISHAY]

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN;
SST211-T1
型号： SST211-T1
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN
文件： 总6页 (文件大小：77K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SD211DE/SST211 Series  
N-Channel Lateral DMOS FETs  
SD211DE  
SD213DE  
SD215DE  
SST211  
SST213  
SST215  
Product Summary  
Part Number  
V(BR)DS Min (V)  
VGS(th) Max (V)  
rDS(on) Max (W)  
Crss Max (pF)  
tON Max (ns)  
SD211DE  
SD213DE  
SD215DE  
SST211  
30  
10  
20  
30  
10  
20  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
45 @ V = 10 V  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
2
2
2
2
2
2
GS  
45 @ V = 10 V  
GS  
45 @ V = 10 V  
GS  
50 @ V = 10 V  
GS  
SST213  
50 @ V = 10 V  
GS  
SST215  
50 @ V = 10 V  
GS  
Features  
Benefits  
Applications  
D Ultra-High Speed Switching—tON: 1 ns  
D Ultra-Low Reverse Capacitance: 0.2 pF  
D Low Guaranteed rDS @ 5 V  
D High Speed System Performance  
D Low Insertion Loss at High Frequencies  
D Low Transfer Signal Loss  
D Fast Analog Switch  
D Fast Sample-and-Holds  
D Pixel-Rate Switching  
D DAC Deglitchers  
D Low Turn-On Threshold Voltage  
D N-Channel Enhancement Mode  
D Simple Driver Requirement  
D Single Supply Operation  
D High-Speed Driver  
Description  
The SD211DE/SST211 series consists of enhancement- integrated Zener diode provides ESD protection. These  
mode MOSFETs designed for high speed low-glitch devices feature a poly-silicon gate for manufacturing  
switching in audio, video, and high-frequency reliability.  
applications. The SD211 may be used for "5-V analog  
switching or as a high speed driver of the SD214. The  
SD214 is normally used for "10-V analog switching.  
These MOSFETs utilize lateral construction to achieve For similar products see: quad array—SD5000/5400  
low capacitance and ultra-fast switching speeds. An series and non-Zener protection—SD210DE/214DE.  
TO-206AF  
(TO-72)  
TOĆ253  
(SOTĆ143)  
Body  
Substrate  
(Case)  
S
4
3
G
D
1
2
4
3
Body Substrate  
S
1
2
D
G
Top View  
SST211 (D1)*, SST213 (D3)*, SST215 (D5)*  
Top View  
SD211DE, SD213DE, SD215DE  
*Marking Code for TOĆ253  
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295.  
Applications information may also be obtained via FaxBack, request document #70607.  
Siliconix  
1
S-51850—Rev. F, 14-Apr-97  
SD211DE/SST211 Series  
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)  
GateĆDrain, GateĆSource Voltage (SD211DE/SST211) -30/25 V  
(SD213DE/SST213) -15/25 V  
SourceĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V  
(SD213DE/SST213) . . . . . . . . . . . 15 V  
(SD215DE/SST215) -25/30 V  
(SD215DE/SST215) . . . . . . . . . . . 25 V  
a
GateĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . -0.3/25 V  
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
(SD213DE/SST213) . . . . . . . -0.3/25 V  
(SD215DE/SST215) . . . . . . . -0.3/30 V  
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . 300_C  
16  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 125_C  
DrainĆSource Voltage  
SourceĆDrain Voltage  
(SD211DE/SST211) . . . . . . . . . . . . 30 V  
(SD213DE/SST213) . . . . . . . . . . . 10 V  
(SD215DE/SST215) . . . . . . . . . . . 20 V  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW  
(SD211DE/SST211) . . . . . . . . . . . . 10 V  
(SD213DE/SST213) . . . . . . . . . . . 10 V  
(SD215DE/SST215) . . . . . . . . . . . 20 V  
DrainĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V  
(SD213DE/SST213) . . . . . . . . . . . 15 V  
Notes:  
(SD215DE/SST215) . . . . . . . . . . . 25 V  
a. Derate 3 mW/_C above 25_C  
Specificationsa  
Limits  
213 Series  
215 Series  
211 Series  
Parameter  
Static  
Symbolb  
Test Conditionsb  
Typc Min Max Min Max Min Max Unit  
V
= V = 0 V, I = 10 mA  
35  
30  
30  
10  
GS  
BS  
D
Drain-Source  
Breakdown Voltage  
V
V
(BR)DS  
(BR)SD  
V
= V = –5 V, I = 10 nA  
10  
10  
20  
20  
GS  
BS  
D
Source-Drain  
Breakdown Voltage  
V
= V = –5 V, I = 10 nA  
22  
35  
35  
10  
15  
15  
GD  
BD  
S
V
Drain-Substrate  
Breakdown Voltage  
V
= 0 V, I = 10 nA,  
GB  
D
V
15  
15  
25  
25  
(BR)DBO  
Source Open  
Source-Substrate  
Breakdown Voltage  
V
= 0 V, I = 10 mA,  
GB  
S
V
(BR)SBO  
Drain Open  
V
V
V
V
= 10 V  
= 20 V  
= 10 V  
= 20 V  
0.4  
0.9  
0.5  
1
10  
10  
10  
10  
DS  
DS  
SD  
SD  
Drain-Source  
Leakage  
I
V
= V = –5 V  
GS BS  
DS(off)  
10  
nA  
V
Source-Drain  
Leakage  
I
V
= V = –5 V  
GD BD  
SD(off)  
10  
Gate Leakage  
I
V
= V = 0 V, V = 30V  
0.01  
100  
1.5  
100  
1.5  
100  
GBS  
DB  
SB  
GB  
V
= V , I = 1 mA  
GS D  
DS  
Threshold Voltage  
V
0.8  
58  
0.5  
0.1  
0.1  
1.5  
70  
GS(th)  
V
= 0 V  
SB  
V
= 5 V  
GS  
70  
75  
45  
50  
70  
75  
45  
50  
(SD Series)  
V
= 5 V  
(SST  
Series)  
GS  
60  
38  
40  
75  
45  
50  
V
= 10 V  
GS  
(SD Series)  
Drain-Source  
On-Resistance  
V
= 0 V  
SB  
= 1 mA  
r
W
DS(on)  
I
D
V
= 10 V  
(SST  
GS  
Series)  
V
V
V
= 15 V  
30  
26  
24  
GS  
GS  
GS  
= 20 V  
= 25 V  
2
Siliconix  
S-51850—Rev. F, 14-Apr-97  
SD211DE/SST211 Series  
Specificationsa  
Limits  
213 Series  
215 Series  
211 Series  
Parameter  
Dynamic  
Symbolb  
Test Conditionsb  
Typc Min Max Min Max Min Max Unit  
SD Series  
11  
10.5  
0.9  
10  
9
10  
9
10  
9
V
V
= 10 V  
= 0 V  
DS  
g
fs  
Forward  
Transconductance  
SST Series  
All  
mS  
pF  
SB  
I
= 20 mA, f = 1 kHz  
D
g
os  
Gate Node  
Capacitance  
C
2.5  
1.1  
3.5  
3.5  
3.5  
(GS+GD+GB)  
Drain Node  
Capacitance  
SD Series  
C
1.5  
5.5  
1.5  
5.5  
1.5  
5.5  
(GD+DB)  
V
= 10 V  
DS  
f = 1 MHz  
3.7  
4.2  
Source Node  
Capacitance  
V
= V = –15 V  
GS  
BS  
C
(GS+SB)  
SST Series  
SD Series  
Reverse Transfer  
Capacitance  
C
rss  
0.2  
0.5  
0.5  
0.5  
Switching  
t
0.5  
0.6  
2
1
1
1
1
1
1
d(on)  
Turn-On Time  
SD Series Only  
= 0 V, V 0 to 5 V, R = 25 W  
t
r
ns  
V
SB  
IN  
G
t
d(off)  
V
= 5 V, R = 680 W  
DD  
L
Turn-Off Time  
t
f
6
Notes:  
a.  
T
= 25_C unless otherwise noted.  
DMCBA  
A
b. B is the body (substrate), and (BR) is breakdown.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
Siliconix  
3
S-51850—Rev. F, 14-Apr-97  
SD211DE/SST211 Series  
Typical Characteristics  
Leakage Current vs. Applied Voltage  
On-Resistance vs. Gate-Source Voltage  
10 nA  
1 nA  
I
I
I
@ V = V = –5 V  
GS BG  
D (off)  
S(off)  
300  
@ V = V = –5V  
GD  
BD  
@ V = 0 V, Drain Open  
SBO  
GB  
V
= 4 V  
240  
180  
120  
60  
GS  
I
S(off)  
100 pA  
10 pA  
1 pA  
I
D(off)  
I
SBO  
5 V  
10 V  
I
GSS (Diode)  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
V
– Body-Source Voltage (V)  
Applied Voltage (V)  
SB  
Common-Source Forward Transconductance  
vs. Drain Current  
On-Resistance vs. Temperature  
20  
16  
12  
8
100  
80  
60  
40  
20  
0
V
V
= 15 V  
= 0 V  
I
= 5 mA, V = 0 V  
DS  
BS  
D
BS  
T
A
= 55_C  
V
= 5 V  
GS  
25_C  
10 V  
20 V  
15 V  
125_C  
4
0
1
10  
– Drain Current (mA)  
100  
–60  
–20  
20  
60  
100  
140  
I
T
A
– Temperature (_C)  
D
Output Conductance vs. Drain Current  
Threshold Voltage vs. Temperature  
1.0  
5
V
I
= V = V  
= 1 mA  
V
= 0 V  
GS  
DS  
TH  
BS  
f = 1 kHz  
D
0.8  
0.6  
0.4  
0.2  
0
4
3
2
1
0
V
= 5 V  
DS  
V
= –10 V  
BS  
10 V  
–5 V  
–1 V  
–0.5 V  
15 V  
0 V  
0
4
8
I – Drain Current (mA)  
D
12  
16  
20  
–60  
–20  
20  
60  
100  
140  
T
A
– Temperature (_C)  
4
Siliconix  
S-51850—Rev. F, 14-Apr-97  
SD211DE/SST211 Series  
Typical Characteristics (Cont’d)  
Threshold Voltage vs. Substrate-Source Voltage  
Leakage Current vs. Temperature  
100  
5
I
I
@ V = V = –5 V, V = 10 V  
GS BS DS  
D(off)  
S(off)  
V
= V = V  
DS TH  
= 1 mA  
= 25_C  
GS  
@ V = V = –5 V, V = 10 V  
GD  
BD  
SD  
I
D
I
I
@ V = 10 V  
GS  
4
3
2
1
0
T
A
GSS  
SBO  
@ V = 10 V  
SB  
Drain Open  
I
S(off)  
H
L
I
D(off)  
10  
I
SBO  
I
GSS  
(Diode)  
1
0
–4  
–8  
–12  
–16  
–20  
25  
50  
T
75  
100  
125  
V
– Body-Source Voltage (V)  
– Temperature (_C)  
BS  
A
Capacitance vs. Gate-Source Voltage  
Body Leakage Current vs. Drain-Body Voltage  
10  
100 mA  
10 mA  
V
V
= 10 V, f = 1 MHz  
DS  
GS  
= V  
BS  
8
6
4
2
0
1 mA  
100 nA  
10 nA  
I
= 13 mA  
D
C
(GS+SB)  
1 nA  
100 pA  
10 pA  
1 pA  
C
1 mA  
(GS+GD+GB)  
C
(GD+DB)  
C
(DG)  
0
4
8
12  
16  
20  
0
4
8
12  
(V)  
16  
20  
V
– Gate-Source Voltage (V)  
V
DB  
GS  
Input Admittance  
Forward Admittance  
100  
10  
100  
10  
V
= 10 V  
= 10 mA  
= 25_C  
V
= 10 V  
DS  
DS  
I
I
= 10 mA  
= 25_C  
D
D
T
A
T
A
g
fs  
b
is  
1
1
–b  
fs  
g
is  
0.1  
0.1  
100  
200  
500  
1000  
100  
200  
500  
1000  
f – Frequency (MHz)  
f – Frequency (MHz)  
Siliconix  
S-51850—Rev. F, 14-Apr-97  
5
SD211DE/SST211 Series  
Typical Characteristics  
Reverse Admittance  
Output Admittance  
1
100  
10  
V
= 10 V  
= 10 mA  
= 25_C  
V
= 10 V  
DS  
= 10 mA  
= 25_C  
DS  
I
I
D
D
T
A
T
A
b
rs  
0.1  
+g  
rg  
b
og  
–g  
rg  
0.01  
1
g
og  
0.001  
0.1  
100  
200  
f – Frequency (MHz)  
1000  
100  
200  
f – Frequency (MHz)  
1000  
500  
500  
Switching Characteristics  
Output Characteristics  
50  
700  
600  
500  
400  
300  
200  
100  
0
V
T
= 0 V  
= 25_C  
BS  
A
40  
30  
20  
10  
0
V
= 5 V  
4 V  
GS  
3 V  
2 V  
0
1
2
3
4
5
6
7
0
4
8
12  
16  
20  
t – Fall Time (ns)  
f
V
DS  
– Drain-Source Voltage (V)  
Switching Time Test Circuit  
To  
Scope  
+V  
DD  
+5 V  
V
50%  
IN  
510 W  
R
L
V
OUT  
0 V  
To  
Scope  
t
t
d(off)  
d(on)  
Input pulse: t , t < 1 ns  
d
r
V
Pulse width: 100 ns  
IN  
Rep rate: 1 MHz  
+V  
DD  
90%  
V
50%  
10%  
OUT  
Sampling Scope  
W
51  
0 V  
t < 360 ps  
r
t
r
t
f
R
IN  
= 1 MW  
C
IN  
= 2 pF  
BW = 500 MHz  
6
Siliconix  
S-51850—Rev. F, 14-Apr-97  

相关型号：

SST211T

 Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN
TEMIC

SST211X

 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SORTED, DIE
CALOGIC

SST211Y

 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
CALOGIC

SST211YT2

 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
CALOGIC

SST212

 Transistor
CALOGIC

SST213

 FAST DMOS FET Switches N-Channel Enhancement-Mode
CALOGIC

SST213

 HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
Linear System

SST213-T1

 Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN
VISHAY

SST213DE

 N-Channel DMOS Switch - Zener Protected
MICROSS

SST213T

 Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN
TEMIC

SST213T1

 Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
CALOGIC

SST213TT2

 Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN
TEMIC
©2020 ICPDF网 联系我们和版权申明