SST213-T1 [VISHAY]
Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN;型号: | SST213-T1 |
厂家: | VISHAY |
描述: | Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN |
文件: | 总6页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD211DE/SST211 Series
N-Channel Lateral DMOS FETs
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
Product Summary
Part Number
V(BR)DS Min (V)
VGS(th) Max (V)
rDS(on) Max (W)
Crss Max (pF)
tON Max (ns)
SD211DE
SD213DE
SD215DE
SST211
30
10
20
30
10
20
1.5
1.5
1.5
1.5
1.5
1.5
45 @ V = 10 V
0.5
0.5
0.5
0.5
0.5
0.5
2
2
2
2
2
2
GS
45 @ V = 10 V
GS
45 @ V = 10 V
GS
50 @ V = 10 V
GS
SST213
50 @ V = 10 V
GS
SST215
50 @ V = 10 V
GS
Features
Benefits
Applications
D Ultra-High Speed Switching—tON: 1 ns
D Ultra-Low Reverse Capacitance: 0.2 pF
D Low Guaranteed rDS @ 5 V
D High Speed System Performance
D Low Insertion Loss at High Frequencies
D Low Transfer Signal Loss
D Fast Analog Switch
D Fast Sample-and-Holds
D Pixel-Rate Switching
D DAC Deglitchers
D Low Turn-On Threshold Voltage
D N-Channel Enhancement Mode
D Simple Driver Requirement
D Single Supply Operation
D High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement- integrated Zener diode provides ESD protection. These
mode MOSFETs designed for high speed low-glitch devices feature a poly-silicon gate for manufacturing
switching in audio, video, and high-frequency reliability.
applications. The SD211 may be used for "5-V analog
switching or as a high speed driver of the SD214. The
SD214 is normally used for "10-V analog switching.
These MOSFETs utilize lateral construction to achieve For similar products see: quad array—SD5000/5400
low capacitance and ultra-fast switching speeds. An series and non-Zener protection—SD210DE/214DE.
TO-206AF
(TO-72)
TOĆ253
(SOTĆ143)
Body
Substrate
(Case)
S
4
3
G
D
1
2
4
3
Body Substrate
S
1
2
D
G
Top View
SST211 (D1)*, SST213 (D3)*, SST215 (D5)*
Top View
SD211DE, SD213DE, SD215DE
*Marking Code for TOĆ253
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295.
Applications information may also be obtained via FaxBack, request document #70607.
Siliconix
1
S-51850—Rev. F, 14-Apr-97
SD211DE/SST211 Series
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
GateĆDrain, GateĆSource Voltage (SD211DE/SST211) -30/25 V
(SD213DE/SST213) -15/25 V
SourceĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V
(SD213DE/SST213) . . . . . . . . . . . 15 V
(SD215DE/SST215) -25/30 V
(SD215DE/SST215) . . . . . . . . . . . 25 V
a
GateĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . -0.3/25 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
(SD213DE/SST213) . . . . . . . -0.3/25 V
(SD215DE/SST215) . . . . . . . -0.3/30 V
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . 300_C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 125_C
DrainĆSource Voltage
SourceĆDrain Voltage
(SD211DE/SST211) . . . . . . . . . . . . 30 V
(SD213DE/SST213) . . . . . . . . . . . 10 V
(SD215DE/SST215) . . . . . . . . . . . 20 V
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
(SD211DE/SST211) . . . . . . . . . . . . 10 V
(SD213DE/SST213) . . . . . . . . . . . 10 V
(SD215DE/SST215) . . . . . . . . . . . 20 V
DrainĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V
(SD213DE/SST213) . . . . . . . . . . . 15 V
Notes:
(SD215DE/SST215) . . . . . . . . . . . 25 V
a. Derate 3 mW/_C above 25_C
Specificationsa
Limits
213 Series
215 Series
211 Series
Parameter
Static
Symbolb
Test Conditionsb
Typc Min Max Min Max Min Max Unit
V
= V = 0 V, I = 10 mA
35
30
30
10
GS
BS
D
Drain-Source
Breakdown Voltage
V
V
(BR)DS
(BR)SD
V
= V = –5 V, I = 10 nA
10
10
20
20
GS
BS
D
Source-Drain
Breakdown Voltage
V
= V = –5 V, I = 10 nA
22
35
35
10
15
15
GD
BD
S
V
Drain-Substrate
Breakdown Voltage
V
= 0 V, I = 10 nA,
GB
D
V
15
15
25
25
(BR)DBO
Source Open
Source-Substrate
Breakdown Voltage
V
= 0 V, I = 10 mA,
GB
S
V
(BR)SBO
Drain Open
V
V
V
V
= 10 V
= 20 V
= 10 V
= 20 V
0.4
0.9
0.5
1
10
10
10
10
DS
DS
SD
SD
Drain-Source
Leakage
I
V
= V = –5 V
GS BS
DS(off)
10
nA
V
Source-Drain
Leakage
I
V
= V = –5 V
GD BD
SD(off)
10
Gate Leakage
I
V
= V = 0 V, V = 30V
0.01
100
1.5
100
1.5
100
GBS
DB
SB
GB
V
= V , I = 1 mA
GS D
DS
Threshold Voltage
V
0.8
58
0.5
0.1
0.1
1.5
70
GS(th)
V
= 0 V
SB
V
= 5 V
GS
70
75
45
50
70
75
45
50
(SD Series)
V
= 5 V
(SST
Series)
GS
60
38
40
75
45
50
V
= 10 V
GS
(SD Series)
Drain-Source
On-Resistance
V
= 0 V
SB
= 1 mA
r
W
DS(on)
I
D
V
= 10 V
(SST
GS
Series)
V
V
V
= 15 V
30
26
24
GS
GS
GS
= 20 V
= 25 V
2
Siliconix
S-51850—Rev. F, 14-Apr-97
SD211DE/SST211 Series
Specificationsa
Limits
213 Series
215 Series
211 Series
Parameter
Dynamic
Symbolb
Test Conditionsb
Typc Min Max Min Max Min Max Unit
SD Series
11
10.5
0.9
10
9
10
9
10
9
V
V
= 10 V
= 0 V
DS
g
fs
Forward
Transconductance
SST Series
All
mS
pF
SB
I
= 20 mA, f = 1 kHz
D
g
os
Gate Node
Capacitance
C
2.5
1.1
3.5
3.5
3.5
(GS+GD+GB)
Drain Node
Capacitance
SD Series
C
1.5
5.5
1.5
5.5
1.5
5.5
(GD+DB)
V
= 10 V
DS
f = 1 MHz
3.7
4.2
Source Node
Capacitance
V
= V = –15 V
GS
BS
C
(GS+SB)
SST Series
SD Series
Reverse Transfer
Capacitance
C
rss
0.2
0.5
0.5
0.5
Switching
t
0.5
0.6
2
1
1
1
1
1
1
d(on)
Turn-On Time
SD Series Only
= 0 V, V 0 to 5 V, R = 25 W
t
r
ns
V
SB
IN
G
t
d(off)
V
= 5 V, R = 680 W
DD
L
Turn-Off Time
t
f
6
Notes:
a.
T
= 25_C unless otherwise noted.
DMCBA
A
b. B is the body (substrate), and (BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Siliconix
3
S-51850—Rev. F, 14-Apr-97
SD211DE/SST211 Series
Typical Characteristics
Leakage Current vs. Applied Voltage
On-Resistance vs. Gate-Source Voltage
10 nA
1 nA
I
I
I
@ V = V = –5 V
GS BG
D (off)
S(off)
300
@ V = V = –5V
GD
BD
@ V = 0 V, Drain Open
SBO
GB
V
= 4 V
240
180
120
60
GS
I
S(off)
100 pA
10 pA
1 pA
I
D(off)
I
SBO
5 V
10 V
I
GSS (Diode)
0
0
4
8
12
16
20
0
4
8
12
16
20
V
– Body-Source Voltage (V)
Applied Voltage (V)
SB
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance vs. Temperature
20
16
12
8
100
80
60
40
20
0
V
V
= 15 V
= 0 V
I
= 5 mA, V = 0 V
DS
BS
D
BS
T
A
= 55_C
V
= 5 V
GS
25_C
10 V
20 V
15 V
125_C
4
0
1
10
– Drain Current (mA)
100
–60
–20
20
60
100
140
I
T
A
– Temperature (_C)
D
Output Conductance vs. Drain Current
Threshold Voltage vs. Temperature
1.0
5
V
I
= V = V
= 1 mA
V
= 0 V
GS
DS
TH
BS
f = 1 kHz
D
0.8
0.6
0.4
0.2
0
4
3
2
1
0
V
= 5 V
DS
V
= –10 V
BS
10 V
–5 V
–1 V
–0.5 V
15 V
0 V
0
4
8
I – Drain Current (mA)
D
12
16
20
–60
–20
20
60
100
140
T
A
– Temperature (_C)
4
Siliconix
S-51850—Rev. F, 14-Apr-97
SD211DE/SST211 Series
Typical Characteristics (Cont’d)
Threshold Voltage vs. Substrate-Source Voltage
Leakage Current vs. Temperature
100
5
I
I
@ V = V = –5 V, V = 10 V
GS BS DS
D(off)
S(off)
V
= V = V
DS TH
= 1 mA
= 25_C
GS
@ V = V = –5 V, V = 10 V
GD
BD
SD
I
D
I
I
@ V = 10 V
GS
4
3
2
1
0
T
A
GSS
SBO
@ V = 10 V
SB
Drain Open
I
S(off)
H
L
I
D(off)
10
I
SBO
I
GSS
(Diode)
1
0
–4
–8
–12
–16
–20
25
50
T
75
100
125
V
– Body-Source Voltage (V)
– Temperature (_C)
BS
A
Capacitance vs. Gate-Source Voltage
Body Leakage Current vs. Drain-Body Voltage
10
100 mA
10 mA
V
V
= 10 V, f = 1 MHz
DS
GS
= V
BS
8
6
4
2
0
1 mA
100 nA
10 nA
I
= 13 mA
D
C
(GS+SB)
1 nA
100 pA
10 pA
1 pA
C
1 mA
(GS+GD+GB)
C
(GD+DB)
C
(DG)
0
4
8
12
16
20
0
4
8
12
(V)
16
20
V
– Gate-Source Voltage (V)
V
DB
GS
Input Admittance
Forward Admittance
100
10
100
10
V
= 10 V
= 10 mA
= 25_C
V
= 10 V
DS
DS
I
I
= 10 mA
= 25_C
D
D
T
A
T
A
g
fs
b
is
1
1
–b
fs
g
is
0.1
0.1
100
200
500
1000
100
200
500
1000
f – Frequency (MHz)
f – Frequency (MHz)
Siliconix
S-51850—Rev. F, 14-Apr-97
5
SD211DE/SST211 Series
Typical Characteristics
Reverse Admittance
Output Admittance
1
100
10
V
= 10 V
= 10 mA
= 25_C
V
= 10 V
DS
= 10 mA
= 25_C
DS
I
I
D
D
T
A
T
A
b
rs
0.1
+g
rg
b
og
–g
rg
0.01
1
g
og
0.001
0.1
100
200
f – Frequency (MHz)
1000
100
200
f – Frequency (MHz)
1000
500
500
Switching Characteristics
Output Characteristics
50
700
600
500
400
300
200
100
0
V
T
= 0 V
= 25_C
BS
A
40
30
20
10
0
V
= 5 V
4 V
GS
3 V
2 V
0
1
2
3
4
5
6
7
0
4
8
12
16
20
t – Fall Time (ns)
f
V
DS
– Drain-Source Voltage (V)
Switching Time Test Circuit
To
Scope
+V
DD
+5 V
V
50%
IN
510 W
R
L
V
OUT
0 V
To
Scope
t
t
d(off)
d(on)
Input pulse: t , t < 1 ns
d
r
V
Pulse width: 100 ns
IN
Rep rate: 1 MHz
+V
DD
90%
V
50%
10%
OUT
Sampling Scope
W
51
0 V
t < 360 ps
r
t
r
t
f
R
IN
= 1 MW
C
IN
= 2 pF
BW = 500 MHz
6
Siliconix
S-51850—Rev. F, 14-Apr-97
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