AP2301 [BCDSEMI]
1.5A DDR TERMINATION REGULATOR; 1.5A DDR终端稳压器
| 型号： | AP2301 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | 1.5A DDR TERMINATION REGULATOR |
| 文件： | 总12页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
General Description
Features
·
Support Both DDR I (1.25V ) and DDR II
TT
The AP2301 linear regulator is designed to meet the
JEDEC specification SSTL-2 and SSTL-18 for termi-
nation of DDR-SDRAM. The regulator can sink or
source up to 1.5A current continuously, offers enough
current for most DDR applications. Output voltage is
designed to track the reference voltage within a 2%
tolerance for load regulation while preventing shooting
through on the output stage. On-chip thermal limiting
provides protection against a combination of high cur-
rent and ambient temperature which would create an
excessive junction temperature.
(0.9V ) Requirements
TT
·
·
·
Source and Sink Current up to 1.5A
High Accuracy Output Voltage at Full-load
Adjustable V
by External Resistors
OUT
·
Shutdown for Standby or Suspend Mode
Operation with High-impedance Output
Applications
The AP2301, used in conjunction with series termina-
tion resistors, provides an excellent voltage source for
active termination schemes of high speed transmission
lines as those seen in high speed memory buses and
distributed backplane designs.
·
·
·
DDR-SDRAM Termination
DDR-II Termination
SSTL-2 Termination
The AP2301 is available in SOIC-8 and TO-252-5L
packages.
SOIC-8
TO-252-5L
Figure 1. Package Types of AP2301
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Pin Configuration
M Package
(SOIC-8)
D Package
(TO-252-5L)
VOUT
5
4
3
2
VIN
8
7
6
5
VCNTL
VCNTL
VCNTL
VCNTL
1
2
3
4
REFEN
GND
VCNTL (TAB)
REFEN
VOUT
GND
1
VIN
Figure 2. Pin Configuration of AP2301 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOIC-8
TO-252-5L
VIN
1
2
3
4
1
2
4
5
Power Input
Ground
GND
REFEN
VOUT
Reference Voltage Input and Chip Enable
Output Voltage
Supply Voltage for Internal Circuit (Internally Connected for SOIC-8),
(TAB for TO-252-5L)
VCNTL
5, 6, 7, 8
3
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Functional Block Diagram
VCNTL
V
IN
CURRENT
LIMIT
BANDGAP
OUTPUT
CONTROL
REFEN
VOUT
GND
START UP
THERMAL
PROTECT
Figure 3. Functional Block Diagram of AP2301
Ordering Information
AP2301
-
E1: Lead Free
Blank: Tin Lead
Circuit Type
Package
M: SOIC-8
D: TO-252-5L
TR: Tape and Reel
Blank: Tube
Part Number
Marking ID
Temperature
Package
Packing Type
Range
Tin Lead
Lead Free
AP2301M-E1
AP2301MTR-E1
AP2301D-E1
Tin Lead
Lead Free
2301M-E1
AP2301M
2301M
2301M
Tube
0 to 125oC
SOIC-8
AP2301MTR
AP2301D
2301M-E1
Tape ＆Reel
Tube
AP2301D
AP2301D
AP2301D-E1
AP2301D-E1
TO-252-
5L
0 to 125oC
AP2301DTR
AP2301DTR-E1
Tape ＆Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Absolute Maximum Ratings (Note 1)
Value
Parameter
Symbol
VCNTL
PD
Unit
Supply Voltage for Internal Circuit
Power Dissipation
7
V
Internally Limited
W
ESD (Human Body Model)
Junction Temperature
ESD
TJ
2
KV
oC
oC
150
TSTG
Storage Temperature Range
-65 to 150
260
oC
TLEAD
Lead Temperature (Soldering, 10sec)
SOIC-8
TO-252-5L
160
130
oC/W
θJA
Package Thermal Resistance (Free Air)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
VCNTL (Note 2, 3)ꢀ
Supply Voltage for Internal Circuit
3.3
6
V
DDR I
2.5
1.8
VIN
TJ
VCNTL
Power Input
1.6
0
V
DDR II
oC
Junction Temperature
125
Note 2: Keep VCNTL ≥VIN in power on and power off sequences.
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)
Parameter
Symbol
Conditions
ΙL=0Α (Note 4)
Min
Typ
0
Max Unit
Output Offset Voltage
VOS
-20
20
2
mV
IL=0 to 1.5A
0.8
0.8
1.2
1.2
3
DDR I
IL=0 to -1.5A
IL=0 to 1.5A
2
Load
Regulation
%
∆VOUT
/
3
VOUT
DDR II
IL=0 to -1.5A
No Load
3
Quiescent Current of VCNTL
Leakage Current in Shutdown Mode
Protection
IQ
5
mA
ISHDN
VREFEN<0.2V, RL=180Ω
3
6
µA
Current Limit
ILIMIT
2.1
0.8
A
oC
oC
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Shutdown Function
TSHDN
3.3V ≤VCNTL ≤5V
150
50
Output = High
Output = Low
Shutdown Threshold Trigger
V
0.2
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN
.
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Typical Performance Characteristics
5
4
3
2
1
5
4
3
VCNTL=3.3V
VCNTL=3.3V
VIN=2.5V
2
VIN=2.5V
VOUT=1.25V
VOUT=1.25V
1
-40
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Junction Temperature (oC)
Junction Temperature (oC)
Figure 4. Sourcing Current vs. Junction Temperature
Figure 5. Sinking Current vs. Junction Temperature
650
600
650
600
550
550
VCNTL=5.0V
VCNTL=3.3V
VIN=2.5V
VIN=2.5V
500
500
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Junction Temperature (oC)
Junction Temperature (oC)
Figure 7. Threshold Voltage vs. Junction Temperature
Figure 6. Threshold Voltage vs. Junction Temperature
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Typical Performance Characteristics (Continued)
20
10
20
10
0
-10
1.5
0
-10
1.5
0.5
0.5.
-0.5
-0.5
-1.5
-2.5
-1.5
-2.5
Time (µs)
Time (µs)
Figure 8. 0.9VTT at 1.5A Transient Response
Figure 9. 1.25VTT at 1.5A Transient Response
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)
0.40
0.39
0.39
VIN=0.9V
0.38
VIN=0.9V
0.38
VIN=0.85V
0.37
VIN=0.85V
0.37
VIN=0.8V
VIN=0.8V
0.36
0.36
0.35
0.34
0.33
0.32
0.35
0.34
0.33
0.32
0.31
0.31
VCNTL=3.3V
VCNTL=5.0V
VREFEN=1.0V
0.30
0.29
0.30
VREFEN=1.0V
0.29
0.28
0.28
40
60
80
100
120
40
60
80
100
120
Junction Temperature(oC)
Junction Temperature (oC)
Figure 11. RDS(on) vs. Junction Temperature
Figure 10. RDS(on) vs. Junction Temperature
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Typical Performance Characteristics (Continued)
350
350
TC=25oC
TC=50oC
TC=65oC
TC=25oC
300
TC=50oC
TC=65oC
300
250
250
200
200
150
100
150
100
50
Package: TO-252-5L
No heatsink
Package: SOIC-8
No heatsink
0
3.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
3.5
4.0
4.5
5.0
5.5
6.0
Power Dissipation (W)
Power Dissipation (W)
Figure 13. Copper Area vs. Power Dissipation
Figure 12. Copper Area vs. Power Dissipation
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Typical Application
VCNTL = 3.3V
VIN = 2.5V
RTT
CCNTL
CIN
VIN
REFEN
VCNTL
VOUT
R1
AP2301
GND
EN
R2
CSS
COUT RDUMMY
Figure 14. Typical Application of AP2301
R1=R2=100KΩ, RTT=50Ω /33Ω /25Ω
RDUMMY=1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present
CSS=1µF, CIN=470µF, CCNTL=47µF, COUT=470µF
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Mechanical Dimensions
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
0.320(0.013)
1.350(0.053)
1.750(0.069)
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
6.200(0.244)
1.270(0.050)
TYP
D
20:1
φ
0.800(0.031)
0.200(0.008)
0.100(0.004)
0.300(0.012)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
6)
00
(0.
50
.1
R0
0.190(0.007)
0.250(0.010)
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
10
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Mechanical Dimensions (Continued)
TO-252-5L
Unit: mm(inch)
6.350(0.250)
6.700(0.264)
4.300(0.169)
5.500(0.217)
2.180(0.086)
2.400(0.094)
4.800(0.189)
MIN
0.430(0.017)
0.600(0.023)
0.900(0.035)
1.250(0.049)
5.970(0.235)
6.220(0.245)
9.500(0.374)
10.400(0.410)
4.300(0.169)
5.400(0.213)
0.000(0.000)
0.250(0.010)
2.550(0.100)
3.200(0.126)
2.540(0.100)BSC
0.450(0.018)
0.700(0.028)
0.430(0.017)
0.600(0.023)
5.080(0.200)
BSC
1.400(0.055)
1.780(0.070)
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
11
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