AP2301BGN-HF [A-POWER]
Simple Drive Requirement, Small Package Outline; 简单的驱动要求，封装尺寸小
| 型号： | AP2301BGN-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement, Small Package Outline |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP2301BGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-20V
130mΩ
- 2.8A
▼ Small Package Outline
D
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
S
SOT-23
G
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
- 20
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+8
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-2.8
A
-2.1
A
-12
A
PD@TA=25℃
TSTG
Total Power Dissipation
1.38
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
90
Unit
Rthj-amb
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
200905122
AP2301BGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.8A
VGS=0V, ID=-250uA
-20
-
-
-
-
V
-
-
130
190
mΩ
mΩ
VGS=-2.5V, ID=-2A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2A
VDS=-16V, VGS=0V
VGS=+8V, VDS=0V
ID=-2A
-0.5
-
7.6
-
-1.25
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-1
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
+100
Qg
7.5
1
12
-
Qgs
Qgd
td(on)
tr
VDS=-16V
VGS=-4.5V
3
-
VDS=-10V
8.5
18
22
10
-
ID=-1A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-5V
RD=10Ω
-
-
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
550 1470
Coss
Crss
Rg
VDS=-20V
60
55
6
-
-
f=1.0MHz
f=1.0MHz
9
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-1.2A, VGS=0V
IS=-2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
16
9
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2301BGN-HF
20
16
12
8
20
16
12
8
T A =25 o
C
T A = 150 o
C
-5.0V
-4.5V
-3.5V
-5.0V
-4.5V
-3.5V
-2.5V
-2.5V
V
G = -2.0V
V G = -2.0V
4
4
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.4
1.2
1
110
I D = -2A
T A =25 o
I D = -2.8A
C
V
GS = -4.5V
100
90
Ω
80
0.8
0.6
70
60
-50
0
50
100
150
1
2
3
4
5
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
4
3
2
1
0
T j =150 o
C
T j =25 o
C
0.8
0.6
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2301BGN-HF
f=1.0MHz
8
800
600
400
200
0
6
I D = -2A
C iss
V DS = -16V
4
2
C oss
C rss
0
0
2
4
6
8
10
12
1
5
9
13
17
21
25
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
DUTY=0.5
0.2
0.1
10
0.1
1ms
0.05
1
PDM
t
0.01
T
10ms
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
100ms
0.1
Single Pulse
Rthja = 270℃/W
T A =25 o
Single Pulse
C
1s
DC
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGD
QGS
10%
VGS
Q
Charge
tr
td(on)
td(off) tf
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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