AP2301AGN-HF [A-POWER]
Simple Drive Requirement, Small Package Outline; 简单的驱动要求，封装尺寸小
| 型号： | AP2301AGN-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement, Small Package Outline |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP2301AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-20V
97mΩ
- 3.3A
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
- 20
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+8
V
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-3.3
A
-2.7
A
-15
A
PD@TA=25℃
TSTG
Total Power Dissipation
1.38
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
90
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201303084
AP2301AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-3A
VGS=0V, ID=-250uA
-20
-
-
-
-
V
-
-
97
mΩ
VGS=-2.5V, ID=-2.6A
130 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-5V, ID=-3A
VDS=-16V, VGS=0V
VGS= +8V, VDS=0V
ID=-3A
-0.3
-
10
-
-1
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-10
IGSS
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
-
+100
Qg
8.5
1.2
3
21
-
Qgs
Qgd
td(on)
tr
VDS=-10V
VGS=-4.5V
VDS=-10V
-
10
20
27
22
-
ID=-1A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=-5V
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
660 1470
135
VDS=-10V
f=1.0MHz
120
7.2
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-0.8A, VGS=0V
IS=-3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
24
11
-
-
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2301AGN-HF
16
12
8
16
12
8
T A =25 o C
-5.0V
-4.5V
-3.5V
-2.5V
-5.0V
T
A = 150 o
C
-4.5V
-3.5V
-2.5V
V
G = -2.0V
V G = -2.0V
4
4
0
0
0
2
4
6
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I D = -3A
I D =-2A
T A =25 o C
V
GS = -4.5V
70
60
50
40
1.6
1.2
0.8
0.4
Ω
-50
0
50
100
150
1
2
3
4
5
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
1.6
1.2
0.8
0.4
0
I D = -250uA
3
2
1
0
T j =150 o
C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2301AGN-HF
f=1.0MHz
6
1000
800
600
400
200
0
I D = -3A
V
DS =-10V
5
4
3
2
1
0
C iss
C oss
C rss
1
5
9
13
17
21
25
0
2
4
6
8
10
12
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
0.2
10
100us
0.1
Operation in this area
0.1
limited by R
DS(ON)
0.05
1ms
1
PDM
0.02
10ms
100ms
t
0.01
T
0.01
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthja + Ta
0.1
Rthja = 270℃/W
1s
T A =25 o
C
DC
Single Pulse
0.01
0.001
0.0001
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
6
4
2
0
4
V DS =-5V
3
2
1
0
T j =150 o
C
T j =25 o
T j =-40 o
C
C
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
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