AP2301BGN-HF [TYSEMI]
Surface Mount Device; 表面安装器件
| 型号： | AP2301BGN-HF |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Surface Mount Device |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
AP2301BGN-HF
▼ Simple Drive Requirement
▼ Small Package Outline
BVDSS
RDS(ON)
ID
-20V
130mΩ
- 2.8A
D
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
S
SOT-23
G
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
- 20
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+8
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-2.8
A
-2.1
A
-12
A
PD@TA=25℃
TSTG
Total Power Dissipation
1.38
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-amb
Maximum Thermal Resistance, Junction-ambient3
90
℃/W
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Product specification
AP2301BGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.8A
VGS=0V, ID=-250uA
-20
-
-
-
-
V
-
-
130
190
mΩ
mΩ
VGS=-2.5V, ID=-2A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2A
VDS=-16V, VGS=0V
VGS=+8V, VDS=0V
ID=-2A
-0.5
-
7.6
-
-1.25
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-1
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
+100
Qg
7.5
1
12
-
Qgs
Qgd
td(on)
tr
VDS=-16V
VGS=-4.5V
3
-
VDS=-10V
8.5
18
22
10
-
ID=-1A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-5V
RD=10Ω
-
-
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
550 1470
Coss
Crss
Rg
VDS=-20V
60
55
6
-
-
f=1.0MHz
f=1.0MHz
9
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-1.2A, VGS=0V
IS=-2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
16
9
-
-
Qrr
Reverse Recovery Charge
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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