AT-41511-BLKG [AVAGO]
General Purpose, Low Noise NPN Silicon Bipolar Transistors Lead-free; 通用型，低噪声NPN硅双极晶体管无铅
| 型号： | AT-41511-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | General Purpose, Low Noise NPN Silicon Bipolar Transistors Lead-free |
| 文件： | 总10页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT-41511, AT-41533
General Purpose, Low Noise NPN
Silicon Bipolar Transistors
Data Sheet
Description
Features
ꢀ General Purpose NPN Bipolar Transistor
Avago’s AT-41511 and AT-41533 are general purpose NPN
bipolar transistors that offer excellent high frequency
performance at an economical price. The AT-41533 uses
the 3 lead SOT-23, while the AT-41511 places the same
die in the lower parasitic 4 lead SOT-143. Both packages
are industry standard, and compatible with high volume
surface mount assembly techniques.
ꢀ 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5dB GA
ꢀ Characterized for 3, 5, and 8Volt Use
ꢀ SOT-23 and SOT-143 SMT Plastic Packages
ꢀ Tape-and-Reel Packaging Option Available
The 4 micron emitter-to-emitter pitch of these transistors
yields high performance products that can perform a ꢀ Lead-free
multiplicity of tasks. The 14 emitter finger interdigitated
geometryyieldsanintermediate-sizedtransistorwitheasy
Pin Connections and Package Marking
to match to impedances, low noise figure, and moderate
power.
EMITTER COLLECTOR
Optimized for best performace from a 5 to 8 volt bias
supply, these transistors are also good performers at 2.7
V. Applications include use in wireless systems as an LNA,
gain stage, buffer, oscillator, or active mixer.
415x
BASE
EMITTER
Anoptimumnoisematchnear50 ohmsat900MHzmakes
thesedevicesparticularlyeasytouseasLNAs.Typicalampli-
fier designs at 900 MHz yield 1 dB noise figures with 15 dB
or more associated gain at a 5V, 5 mA bias, with good gain
and noise figure obtainable at biases as low as 2 mA.
SOT 143 (AT-41511)
COLLECTOR
The AT-415 series bipolar transistors are fabricated using
Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die are nitride passivated for surface protection. Ex-
cellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
415x
BASE
EMITTER
SOT 23 (AT-41533)
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
AT-41511, AT-41533 Absolute Maximum Ratings
Thermal Resistance:[2]
Absolute
Symbol
VEBO
Parameter
Units
V
Maximum[1]
ꢁ ꢁ ꢁ ꢁ ꢁꢂjc =550°C/W
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
1.5
20
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 26°C.
VCBO
V
V
CEO
V
12
IC
PT
mA
mW
°C
50
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
225
Tj
150
TSTG
°C
-65 to 150
Electrical Specifications, TA = 25°C
AT-41511
AT-41533
Typ
Symbol
Parameters and Test Conditions
Units Min
Typ
Max
Min
Max
hFE
Forward Current Transfer Ratio
VCE = 5 V
-
30
150
270
30
150
270
IC = 5 mA
ICBO
IEBO
Collector Cutoff Current
Emitter Cutoff Current
VCB = 3 V
VEB = 1 V
μA
μA
0.2
1.0
0.2
1.0
Characterization Information, TA = 25°C
AT-41511
AT-41533
Symbol
Parameters and Test Conditions
Units
Min Typ Min
Typ
NF
Noise Figure
CE = 5 V, IC = 5 mA
Associated Gain
CE = 5 V, IC = 5 mA
Power at 1 dB Gain Compression (opt tuning)
CE = 5 V, IC = 25 mA
Gain at 1 dB Gain Compression (opt tuning)
CE = 5 V, IC = 25 mA
Output Third Order Intercept Point,
CE = 5 V, IC =25 mA (opt tuning)
Gain in 50 Ω system; VCE = 5 V, IC = 5 mA
f = 0.9 GHz
f = 2.4 GHz
dB
1.0
1.7
1.0
1.6
V
GA
f = 0.9 GHz
f = 2.4 GHz
dB
15.5
11
14.5
9
V
P1dB
G1dB
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
dBm
dB
14.5
17.5
25
14.5
14.5
25
V
V
IP3
dBm
dB
V
2
|S21E
|
f = 0.9 GHz
f = 2.4 GHz
13.5 15.5 10.8 12.8
7.9 5.2
2
AT-41511, AT-41533 Typical Performance
3.0
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
25 mA
25 mA
2.5
2 mA
25 mA
2.0
10 mA
10 mA
10 mA
5 mA
1.5
5 mA
2, 5 mA
1.0
0.5
0
0.5
0
0.5
0
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 8 V.
Figure 2. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 5 V.
Figure 1. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 2.7 V.
20
25
20
15
10
20
PKG 11
PKG 11
10, 25 mA
5 mA
2 mA
15
20
15
15
PKG 11
PKG 33
PKG 33
10, 25 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
10
10
5 mA
2 mA
5
0
5
0
5
0
10
5
PKG 33
2.1
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 8 V.
Figure 5. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 5 V.
Figure 4. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 2.7 V.
20
15
20
20
25 mA
15
15
25 mA
10 mA
10 mA
25 mA
10
10
10
10 mA
5 mA
5 mA
5 mA
5
5
5
0
0
0
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 2.7 V, with Optimal
Tuning.
Figure 8. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 5 V, with Optimal
Tuning.
Figure 9. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 8 V, with Optimal
Tuning.
3
AT-41511 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
S21
Mag
S12
Mag
S22
Mag
0.84
0.59
0.49
0.48
0.46
0.46
0.46
0.47
0.5
Ang
-27
dB
Ang
161
115
93
89
72
64
59
50
36
17
0
dB
Ang
76
48
43
43
44
45
45
46
45
42
37
Mag
0.95
0.65
0.51
0.49
0.44
0.43
0.42
0.42
0.41
0.4
Ang
-11
-34
-39
-39
-43
-45
-47
-51
-59
-73
-91
23.44
19.01
15.09
14.30
11.15
9.69
14.854
8.924
5.684
5.189
3.61
-34.89
-24.88
-22.97
-22.73
-21.21
-20.26
-19.74
-18.64
-17.14
-14.89
-12.96
0.018
0.057
0.071
0.073
0.087
0.097
0.103
0.117
0.139
0.18
-102
-141
-149
-176
170
162
148
130
106
87
3.051
2.774
2.337
1.901
1.454
1.17
8.86
7.37
5.58
0.56
0.61
3.25
1.36
0.225
0.4
30
25
20
15
10
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq
GHz
0.1
0.9
1.8
2.4
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
Mag
0.45
0.39
0.32
0.40
Ang
6
MAG
0.8
1.0
1.4
1.7
0.25
0.19
0.12
0.09
MSG
S21
63
5
0
137
177
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 10. AT-41511 Gains vs. Frequency at VCE
2.7 V, IC = 5 mA.
=
AT-41533TypicalScatteringParameters, CommonEmitter,Zo = 50 Ω,VCE =2.7V, IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.78
0.35
0.23
0.21
0.20
0.22
0.23
0.26
0.30
0.37
0.44
-30
-99
23.43
16.91
12.50
11.65
8.50
7.09
6.30
4.97
3.45
14.834
7.004
4.219
3.826
2.661
2.261
2.065
1.773
1.488
1.211
1.041
155
103
84
80
64
56
51
42
30
13
-1
-33.98
-24.58
-21.21
-20.54
-17.46
-15.97
-15.09
-13.39
-11.21
-8.20
0.020
0.059
0.087
0.094
0.134
0.159
0.176
0.214
0.275
0.389
0.507
75
60
62
63
64
63
63
61
56
46
33
0.94
0.62
0.55
0.54
0.52
0.51
0.51
0.50
0.48
0.45
0.42
-12
-28
-30
-31
-36
-40
-42
-48
-58
-80
-144
-154
162
144
134
118
101
80
1.66
0.35
62
-5.90
-104
30
25
20
15
10
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
0.7
1.0
1.4
1.6
0.45
0.25
0.38
0.54
8
94
-159
-122
0.20
0.13
0.08
0.16
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 11. AT-41533 Gains vs. Frequency at VCE
2.7 V, IC = 5 mA.
=
4
AT-41511TypicalScatteringParameters, CommonEmitter, Zo = 50 Ω,VCE =2.7V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.49
0.53
0.53
0.53
0.54
0.55
0.56
0.57
0.60
0.64
0.67
-91
-168
172
169
153
145
140
129
116
95
29.26
18.55
13.62
12.73
9.34
7.86
6.97
5.47
3.67
29.048
8.459
4.798
4.330
2.932
2.473
2.232
1.877
1.525
1.162
0.935
136
92
79
76
63
57
52
44
32
14
-1
-37.72
-30.46
-26.56
-25.68
-22.50
-21.01
-20.09
-18.49
-16.54
-13.98
-11.90
0.013
0.030
0.047
0.052
0.075
0.089
0.099
0.119
0.149
0.200
0.254
62
61
66
67
67
66
66
64
59
51
43
0.73
0.45
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.40
0.39
-22
-23
-26
-27
-34
-38
-41
-48
-58
-75
-96
1.30
-0.58
79
30
25
20
15
10
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.6
1.9
2.3
2.7
0.13
0.24
0.40
0.50
18
0.16
0.13
0.23
0.35
5
0
-162
-137
-122
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 12. AT-41511 Gains vs. Frequency at VCE
2.7 V, IC = 25 mA.
=
AT-41533TypicalScatteringParameters, CommonEmitter, Zo = 50 Ω,VCE =2.7V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.34
0.19
0.20
0.20
0.24
0.25
0.27
0.29
0.33
0.39
0.45
-75
-168
161
154
132
121
115
105
93
29.37
17.63
12.73
11.84
8.56
7.12
6.32
4.99
3.46
29.404
7.614
4.329
3.909
2.679
2.271
2.071
1.777
1.489
1.215
1.047
127
88
74
71
59
52
47
39
27
11
-3
-37.08
-25.68
-20.82
-19.91
-16.42
-14.85
-13.94
-12.32
-10.31
-7.66
0.014
0.052
0.091
0.101
0.151
0.181
0.201
0.242
0.305
0.414
0.517
72
76
74
74
70
67
65
61
54
42
29
0.71
0.47
0.46
0.45
0.45
0.44
0.44
0.43
0.41
0.37
0.33
-21
-20
-24
-26
-33
-38
-41
-48
-59
-81
76
60
1.69
0.40
-5.73
-106
30
25
20
15
10
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.3
1.6
1.9
2.1
0.10
0.25
0.48
0.59
24
0.12
0.11
0.19
0.37
5
0
-158
-122
-101
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 13. AT-41533 Gains vs. Frequency at VCE
2.7 V, IC = 25 mA.
=
5
AT-41511TypicalScatteringParameters,CommonEmitter, Zo = 50 Ω,VCE =5V, IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.88
0.61
0.50
0.48
0.45
0.45
0.45
0.45
0.48
0.53
0.58
-25
-96
23.47
19.31
15.49
14.70
11.59
10.13
9.31
7.85
6.06
3.77
1.91
14.918
9.234
5.948
5.433
3.796
3.210
2.921
2.469
2.009
1.544
1.246
162
116
94
90
74
66
61
52
39
19
2
-34.89
-25.04
-23.22
-22.85
-21.31
-20.45
-19.91
-18.86
-17.33
-15.09
-13.07
0.018
0.056
0.069
0.072
0.086
0.095
0.101
0.114
0.136
0.176
0.222
77
49
44
43
44
45
46
46
46
43
39
0.95
0.66
0.52
0.50
0.45
0.44
0.43
0.42
0.42
0.40
0.40
-11
-33
-38
-39
-42
-44
-46
-51
-58
-72
-90
-135
-142
-170
176
168
154
136
111
92
30
25
20
15
10
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 5 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
0.8
1.0
1.4
1.7
0.46
0.39
0.34
0.39
5
60
130
173
0.30
0.22
0.13
0.09
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 14. AT-41511 Gains vs. Frequency at VCE
5 V, IC = 5 mA.
=
AT-41533TypicalScatteringParameters,CommonEmitter, Zo = 50 Ω,VCE =5V, IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.79
0.36
0.22
0.20
0.18
0.19
0.21
0.24
0.28
0.35
0.42
-28
-94
23.48
17.15
12.77
11.93
8.77
7.34
6.56
5.22
3.68
14.932
7.200
4.349
3.948
2.746
2.328
2.128
1.823
1.527
1.240
1.062
155
104
84
81
65
58
53
44
32
14
0
-34.89
-25.35
-21.94
-21.21
-18.20
-16.65
-15.70
-14.02
-11.77
-8.61
0.018
0.054
0.080
0.087
0.123
0.147
0.164
0.199
0.258
0.371
0.491
76
61
63
64
65
65
65
63
59
50
37
0.95
0.65
0.58
0.57
0.56
0.55
0.55
0.54
0.53
0.50
0.47
-11
-25
-27
-29
-34
-37
-39
-45
-55
-74
-97
-137
-148
165
145
134
118
100
80
1.87
0.52
61
-6.18
30
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 5 mA
25
20
15
10
MSG
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
Mag
Ang
0.1
0.9
1.8
2.4
0.7
1.0
1.4
1.6
0.46
0.29
0.36
0.53
7
86
-163
-126
0.21
0.13
0.07
0.15
MSG
S21
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 15. AT-41533 Gains vs. Frequency at VCE
5 V, IC = 5 mA.
=
6
AT-41511TypicalScatteringParameters, CommonEmitter, Zo = 50 Ω,VCE =5V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.51
0.46
0.47
0.47
0.48
0.49
0.49
0.51
0.54
0.59
0.63
-74
-161
177
173
157
148
142
132
118
97
30
20
15
14
11
9
9
7
5
3
32.792
10.259
5.830
5.257
3.553
2.983
2.692
2.254
1.825
1.386
1.113
140
95
80
78
65
58
54
46
34
16
0
-39
-31
-27
-27
-23
-22
-21
-19
-17
-15
-13
0.011
0.028
0.043
0.047
0.068
0.081
0.090
0.108
0.135
0.183
0.234
65
62
66
67
68
68
67
65
61
54
47
0.80
0.51
0.48
0.48
0.47
0.48
0.48
0.48
0.47
0.46
0.46
-19
-21
-23
-24
-30
-34
-36
-42
-51
-66
-84
81
1
30
25
20
15
10
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 25 mA
MAG
S21
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
Mag
Ang
MSG
0.1
0.9
1.8
2.4
1.6
1.9
2.3
2.7
0.08
0.11
0.28
0.39
14
0.18
0.16
0.18
0.22
165
-153
-134
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 16. AT-41511 Gains vs. Frequency at VCE
5 V, IC = 25 mA.
=
AT-41533TypicalScatteringParameters, CommonEmitter, Zo = 50 Ω,VCE =5V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.37
0.13
0.13
0.13
0.17
0.19
0.20
0.23
0.27
0.33
0.39
-62
-153
163
154
128
117
111
102
90
30.00
18.46
13.56
12.68
9.38
7.93
7.14
5.80
4.25
31.606
8.375
4.764
4.305
2.945
2.493
2.274
1.949
1.632
1.331
1.147
129
89
76
73
61
54
50
42
31
14
-1
-37.72
-26.20
-21.31
-20.45
-16.95
-15.39
-14.47
-12.84
-10.84
-8.13
0.013
0.049
0.086
0.095
0.142
0.170
0.189
0.228
0.287
0.392
0.496
73
76
75
74
71
68
66
62
56
45
32
0.74
0.51
0.49
0.49
0.48
0.48
0.48
0.47
0.45
0.42
0.38
-19
-19
-23
-25
-31
-35
-38
-44
-54
-74
-97
76
60
2.48
1.19
-6.09
30
25
20
15
10
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 25 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
Mag
Ang
MAG
0.1
0.9
1.8
2.4
1.3
1.6
1.9
2.1
0.08
0.19
0.42
0.55
13
0.12
0.10
0.16
0.32
MSG
S21
-170
-126
-105
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 17. AT-41533 Gains vs. Frequency at VCE
5 V, IC = 25 mA.
=
7
AT-41511TypicalScatteringParameters,CommonEmitter, Zo = 50 Ω,VCE =8V, IC =10mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.75
0.47
0.41
0.40
0.39
0.40
0.40
0.42
0.44
0.51
0.56
-36
-119
-155
-161
174
162
155
143
126
104
87
27.71
21.24
16.80
15.96
12.66
11.16
10.29
8.77
24.305
11.535
6.921
6.281
4.294
3.615
3.269
2.745
2.226
1.698
1.370
155
106
88
84
70
63
59
50
38
19
3
-37.72
-28.87
-26.20
-25.68
-23.10
-21.83
-21.11
-19.66
-17.86
-15.44
-13.39
0.013
0.036
0.049
0.052
0.070
0.081
0.088
0.104
0.128
0.169
0.214
73
53
55
56
58
59
58
58
55
50
45
0.92
0.60
0.51
0.50
0.48
0.48
0.48
0.48
0.47
0.46
0.46
-13
-27
-28
-29
-32
-35
-37
-41
-48
-61
-76
6.95
4.60
2.73
30
25
20
15
10
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 10 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.1
1.3
1.6
1.8
0.40
0.33
0.27
0.35
7
62
135
178
0.27
0.20
0.13
0.10
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 18. AT-41511 Gains vs. Frequency at VCE
8 V, IC = 10 mA.
=
AT-41533TypicalScatteringParameters,CommonEmitter, Zo = 50 Ω,VCE =8V, IC =10mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.65
0.20
0.11
0.09
0.11
0.13
0.14
0.17
0.22
0.28
0.35
-37
-100
-146
-161
144
125
116
104
91
27.45
18.60
13.89
13.03
9.77
8.34
7.53
6.20
4.66
23.576
8.509
4.947
4.482
3.081
2.611
2.379
2.041
1.710
1.396
1.204
145
97
81
78
64
58
53
45
33
16
1
-35.92
-26.20
-21.83
-20.92
-17.59
-16.03
-15.09
-13.47
-11.40
-8.61
0.016
0.049
0.081
0.090
0.132
0.158
0.176
0.212
0.269
0.371
0.476
73
69
71
70
69
67
65
62
57
47
35
0.88
0.57
0.54
0.53
0.52
0.51
0.51
0.50
0.49
0.46
0.43
-15
-23
-25
-26
-32
-35
-38
-43
-52
-71
-92
77
62
2.90
1.61
-6.45
30
25
20
15
10
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 10 mA
MSG
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
Mag
Ang
MAG
0.1
0.9
1.8
2.4
0.8
1.1
1.5
1.7
0.40
0.20
0.32
0.49
13
93
-154
-121
0.18
0.12
0.09
0.17
MSG
S21
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 19. AT-41533 Gains vs. Frequency at VCE
8 V, IC = 10 mA.
=
8
AT-41511TypicalScatteringParameters, CommonEmitter, Zo = 50 Ω,VCE =8V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.55
0.44
0.44
0.44
0.45
0.46
0.46
0.48
0.51
0.57
0.61
-65
-155
-179
176
159
150
144
133
119
99
30.44
20.69
15.83
14.95
11.55
10.03
9.14
7.61
5.78
3.39
1.49
33.264
10.832
6.190
5.588
3.779
3.173
2.865
2.401
1.945
1.477
1.187
142
96
81
78
66
59
55
46
35
17
1
-39.17
-31.37
-27.54
-26.74
-23.61
-22.16
-21.31
-19.66
-17.72
-15.09
-12.92
0.011
0.027
0.042
0.046
0.066
0.078
0.086
0.104
0.130
0.176
0.226
66
61
66
67
67
67
66
65
61
55
48
0.82
0.54
0.50
0.50
0.49
0.50
0.50
0.50
0.49
0.49
0.48
-17
-21
-22
-23
-29
-32
-35
-40
-48
-63
-80
83
30
25
20
15
10
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 25 mA
MAG
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MSG
Mag
Ang
S21
5
0
0.1
0.9
1.8
2.4
1.6
1.9
2.3
2.7
0.08
0.10
0.22
0.32
10
0.20
0.19
0.18
0.18
100
-170
-147
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 20. AT-41511 Gains vs. Frequency at VCE
8 V, IC = 25 mA.
=
AT-41533TypicalScatteringParameters, CommonEmitter, Zo = 50 Ω,VCE =8V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.41
0.11
0.10
0.10
0.14
0.16
0.17
0.20
0.24
0.30
0.37
-57
-138
168
156
126
115
108
99
30.11
18.75
13.87
12.99
9.70
8.25
7.45
6.11
4.56
32.026
8.664
4.938
4.460
3.054
2.585
2.359
2.020
1.691
1.380
1.190
130
90
77
74
62
55
51
43
32
15
0
-37.72
-26.38
-21.51
-20.63
-17.14
-15.60
-14.66
-13.03
-11.03
-8.31
0.013
0.048
0.084
0.093
0.139
0.166
0.185
0.223
0.281
0.384
0.487
73
76
75
74
71
68
66
62
56
45
33
0.76
0.52
0.50
0.50
0.49
0.49
0.49
0.48
0.46
0.43
0.39
-18
-19
-22
-24
-31
-34
-37
-43
-53
-72
-94
89
75
61
2.80
1.51
-6.25
30
25
20
15
10
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 25 mA
Freq
GHz
Fmin
dB
ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢃopt
Rn
-
MAG
S21
Mag
Ang
0.1
0.9
1.8
2.4
1.3
1.6
1.9
2.1
0.07
0.12
0.36
0.51
18
0.16
0.12
0.15
0.28
MSG
164
-134
-109
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 21. AT-41533 Gains vs. Frequency at VCE
8 V, IC = 25 mA.
=
9
Ordering Information
Part Numbers
No. of Devices
100
Comments
Bulk
AT-41511-BLKG
AT-41511-TR1G
AT-41511-TR2G
AT-41533-BLKG
AT-41533-TR1G
AT-41533-TR2G
3000
7" Reel
13" Reel
10000
Package Dimensions
SOT-143 Plastic Package
SOT-23 Plastic Package
e2
e2
e1
e1
B1
E1
E1
E
E
XXX
XXX
e
L
L
B
D
C
B
C
e
DIMENSIONS (mm)
DIMENSIONS (mm)
SYMBOL
A
A1
B
C
D
E1
e
e1
e2
E
MIN.
0.79
0.000
0.30
0.08
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.20
3.13
1.50
1.02
2.04
0.60
2.70
0.69
D
SYMBOL
MIN.
0.79
0.013
0.36
0.76
0.086
2.80
1.20
0.89
1.78
0.45
2.10
0.45
MAX.
1.097
0.10
0.54
0.92
0.152
3.06
1.40
1.02
2.04
0.60
2.65
0.69
A
A1
B
A
A
B1
C
A1
A1
D
E1
e
Notes:
XXX-package marking
Drawings are not to scale
e1
e2
E
L
Notes:
XXX-package marking
Drawings are not to scale
L
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2649EN
AV02-0798EN - December 23, 2009
相关型号：
AT-41511-TR1G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SMT, 4 PIN
AGILENT
AT-41532-BLKG
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
AGILENT
AT-41532-TR1G
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SC-70, 3 PIN
AVAGO
AT-41532-TR1G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
AGILENT
AT-41532-TR2G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
AGILENT
©2020 ICPDF网 联系我们和版权申明