AT-41532-TR1G [AVAGO]
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SC-70, 3 PIN;
| 型号： | AT-41532-TR1G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SC-70, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：1170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT-41532
General Purpose, Low Current NPN Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-41532 is a general purpose NPN bipolar transis- •ꢀ General Purpose NPN Bipolar Transistor Optimized for
tor that has been optimized for maximum ft at low voltage
operation, making it ideal for use in battery powered
applications in cellular/PCS and other wireless markets.
The AT-41532 uses the miniature 3-lead SOT-323 (SC-70)
plastic package.
Low Current, Low Voltage Applications at 900 MHz,
1.8 GHz, and 2.4 GHz
•ꢀ Performance (5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5dB GA
1.8 GHz: 1.4 dB NF, 10.5dB GA
2.4 GHz: 1.9 dB NF, 9dB GA
Optimized performance at 5 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplifier design at 900 MHz yields 1 dB NF and 15.5 dB as-
sociated gain at 5 V and 5 mA bias. High gain capability
at 1 V and 1 mA makes this device a good fit for 900 MHz
pager applications. A good noise match near 50 ohms at
900 MHz makes this a very user-friendly device. Moreover,
voltagebreakdownsarehighenoughtosupportoperation
at 10 V.
•ꢀ Characterized for 3, 5, and 8V Use
•ꢀ Miniature 3-lead SOT-323 (SC-70) Plastic Package
•ꢀ High Breakdown Voltage (can be operated up to 10 V)
•ꢀ Lead-free
Applications
•ꢀ LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
The AT-41532 belongs to Avago’s AT-4XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance, and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
•ꢀ LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
•ꢀ Power Amplifier and Oscillator for RF-ID Tag
•ꢀ LNA and Gain Amplifier for GPS
•ꢀ LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
COLLECTOR
41
BASE
EMITTER
AT-41532 Absolute Maximum Ratings
[2]:
Thermal Resistance
Absolute
Maximum
[1]
q = 350°C/W
Symbol
VEBO
VCBO
VCEO
IC
Parameter
Units
V
jc
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
1.5
20
Notes:
V
1. Operation of this device above any one of
these parameters may cause permanent
damage.
V
12
mA
mW
°C
50
2.
T
= 25°C.
MOUNTING SURFACE
PT
Power Dissipation[2, 3]
Junction Temperature
Storage Temperature
225
150
3. Derate at 2.86 mW/°C for T
> 72°C.
MOUNTING SURFACE
Tj
TSTG
°C
-65 to 150
Electrical Specifications, T = 25°C
A
Symbol
Parameters and Test Conditions
Units
Min
Typ
Max
hFE
Forward Current Transfer Ratio
VCE = 5 V,
–
30
150
270
IC = 5 mA
VCB = 3 V
VEB = 1 V
ICBO
IEBO
Collector Cutoff Current
Emitter Cutoff Current
mA
mA
0.2
1.0
Characterization Information, T = 25°C
A
Symbol
Parameters and Test Conditions
Units
Min
Typ
NF
Noise Figure
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
dB
1.0
1.4
1.9
VCE = 5 V, IC = 5 mA
Associated Gain
GA
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
dB
15.5
10.5
9.0
VCE = 5 V, IC = 5 mA
P1dB
G1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 5 V, IC = 25 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
dBm
dB
14.5
14.5
25
Gain at 1 dB Gain Compression (opt tuning)
VCE = 5 V, IC = 25 mA
IP3
Output Third Order Intercept Point (opt tuning)
VCE = 5 V, IC = 25 mA
dBm
dB
2
|S21E
|
Gain in 50 Ω System
VCE = 5 V, IC = 5 mA
f = 0.9 GHz
f = 2.4 GHz
12.5
13.25
5.2
2
AT-41532 Typical Performance
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.5
3.0
3.5
3.0
2 mA
5 mA
2 mA
5 mA
2.5
2.0
1.5
1.0
2.5
2.0
1.5
1.0
0.5
0
0.5
0
0.5
0
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. AT-41532 Typical Noise Figure vs.
Frequency at 1 V, 1 mA.
Figure 2. AT-41532 Typical Noise Figure vs.
Frequency and Current at 2.7 V.
Figure 3. AT-41532 Typical Noise Figure vs.
Frequency and Current at 5 V.
10
8
16
16
2 mA
5 mA
2 mA
5 mA
12
8
12
8
6
4
4
4
2
0
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. AT-41532 Associated Gain vs.
Frequency at 1 V, 1 mA.
Figure 5. AT-41532 Associated Gain vs.
Frequency and Current at 2.7 V.
Figure 6. AT-41532 Associated Gain vs.
Frequency and Current at 5 V.
20
15
10
5
9
8
7
6
5
4
3
0
2
2.7 V
5 V
-5
-10
2.7 V
5 V
1
0
0
5
10
15
20
25
0
5
10
15
20
25
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure 7. AT-41532 P1 vs. Collector Current
dB
and Voltage (valid up to 2.4 GHz).
Figure 8. AT-41532 G1 vs. Collector Current
dB
and Voltage (valid up to 2.4 GHz).
3
AT-41532 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 1 V, I = 1 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-75
-104
-128
-166
-164
118
79
dB
Mag
Ang
125
106
90
dB
Mag
Ang
49
Mag
Ang
-22
-28
-32
-40
-50
-73
-102
-137
-180
130
88
0.5
0.787
0.697
0.620
0.554
0.538
0.543
0.559
0.561
0.545
0.534
0.544
0.563
0.597
0.655
0.703
8.79
7.28
5.84
3.40
1.52
-1.06
-2.61
-3.06
-2.81
-2.46
-2.38
-2.49
-2.79
-3.39
-4.03
2.750
2.311
1.960
1.480
1.191
0.886
0.741
0.703
0.724
0.754
0.761
0.751
0.725
0.677
0.629
-20.18
-18.74
-18.40
-18.80
-18.69
-13.30
-8.03
-4.83
-3.11
-2.30
-2.08
-2.18
-2.52
-3.15
-3.76
0.098
0.116
0.120
0.115
0.116
0.216
0.397
0.574
0.699
0.768
0.787
0.778
0.748
0.696
0.649
0.860
0.785
0.734
0.678
0.653
0.620
0.568
0.487
0.398
0.362
0.407
0.467
0.523
0.593
0.665
0.75
1.0
38
31
1.5
66
30
2.0
48
42
3.0
22
60
4.0
5
47
5.0
47
-7
24
6.0
28
-20
-35
-52
-68
-84
-100
-112
0
7.0
14
-23
-44
-63
-80
-96
-110
8.0
2
9.0
-10
-23
-34
-42
58
10.0
11.0
12.0
35
16
-6
AT-41532 Typical Noise Parameters,
Common Emitter, Z = 50 Ω, V = 1 V, I = 1 mA
O
CE
C
20
16
1.50
1.25
1.00
gmax
dB(S|2,1|)
k
Γ
opt
Freq.
GHz
F
dB
R
G
assoc
dB
min
n
Mag
Ang
ohms
12.4
3.0
12
8
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.4
1.8
1.9
2.2
2.6
3.1
3.6
0.44
0.57
0.60
0.66
0.71
0.75
0.77
92
9.4
7.6
6.7
5.7
4.6
3.5
2.1
-183
-169
-140
-116
-95
0.75
0.50
3.3
4
10.1
27.6
59.9
103.0
0
0.25
0
-4
0
1
2
3
4
5
6
-77
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at 1 V, 1 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
2*|S | |S
|
12 21
4
AT-32032 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 2.7 V, I = 2 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-82
-111
-134
-171
160
116
80
dB
Mag
Ang
119
101
88
dB
Mag
Ang
52
Mag
Ang
-21
-24
-27
-33
-40
-59
-81
-108
-142
174
123
82
0.5
0.647
0.532
0.455
0.394
0.382
0.397
0.434
0.474
0.497
0.501
0.512
0.532
0.569
0.643
0.687
13.45
11.34
9.54
6.70
4.64
1.87
0.03
-1.20
-1.81
-1.88
-1.89
-1.99
-2.31
-2.37
-3.51
4.702
3.691
3.000
2.162
1.707
1.240
1.004
0.871
0.812
0.805
0.804
0.796
0.767
0.762
0.668
-23.97
-22.60
-21.87
-20.48
-18.50
-13.56
-9.26
-6.05
-3.84
-2.40
-1.73
-1.61
-1.86
-2.41
-3.10
0.063
0.074
0.081
0.095
0.119
0.210
0.344
0.498
0.643
0.759
0.819
0.831
0.808
0.758
0.700
0.808
0.737
0.696
0.658
0.643
0.627
0.604
0.556
0.470
0.377
0.361
0.411
0.476
0.562
0.639
0.75
1.0
46
46
1.5
68
52
2.0
51
59
3.0
26
61
4.0
5
50
5.0
50
-10
-23
-36
-51
-67
-83
-97
-112
32
6.0
30
11
7.0
15
-12
-34
-55
-74
-93
-107
8.0
4
9.0
-9
10.0
11.0
12.0
-22
-32
-40
52
27
1
AT-32032 Typical Noise Parameters,
Common Emitter, Z = 50 Ω, V = 2.7 V, I = 2 mA
O
CE
C
20
16
1.2
1
gmax
dB(S|2,1|)
k
Γ
opt
Freq.
GHz
F
dB
R
G
assoc
dB
min
n
Mag
Ang
100
-179
-165
-136
-112
-91
ohms
0.8
12
8
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.2
1.6
1.7
1.9
2.2
2.5
2.9
0.35
0.48
0.51
0.60
0.65
0.70
0.74
8.7
12.9
9.7
9.1
8.0
6.9
5.9
5.1
3.3
0.6
0.4
3.7
4
8.9
0
0.2
0
21.0
42.0
72.0
-4
0
1
2
3
4
5
6
-74
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at 2.7 V, 2 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
2*|S | |S
|
12 21
5
AT-41532 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 2.7 V, I = 5 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-102
-130
-152
175
149
112
80
dB
Mag
Ang
106
91
dB
Mag
Ang
59
Mag
Ang
-22
-24
-25
-30
-37
-54
-75
-99
-130
-174
131
87
0.5
0.400
0.312
0.270
0.247
0.253
0.280
0.323
0.379
0.434
0.480
0.522
0.557
0.595
0.662
0.709
17.03
14.15
11.97
8.82
7.106
5.101
3.969
2.762
2.154
1.559
1.269
1.097
0.986
0.920
0.871
0.828
0.779
0.761
0.664
-25.97
-23.86
-22.09
-19.10
-16.60
-12.48
-9.19
-6.55
-4.50
-2.96
-2.07
-1.73
-1.86
-2.43
-3.03
0.050
0.064
0.079
0.111
0.148
0.238
0.347
0.471
0.595
0.711
0.788
0.820
0.808
0.756
0.705
0.671
0.615
0.588
0.564
0.553
0.535
0.514
0.472
0.398
0.309
0.299
0.366
0.449
0.533
0.633
0.75
1.0
60
80
61
1.5
64
63
2.0
6.67
50
62
3.0
3.86
26
55
4.0
2.07
6
43
5.0
55
0.80
-12
-28
-43
-58
-72
-87
-99
-115
27
6.0
38
-0.13
-0.72
-1.20
-1.64
-2.17
-2.38
-3.56
9
7.0
24
-11
-32
-53
-73
-92
-107
8.0
10
9.0
-5
10.0
11.0
12.0
-19
-29
-39
55
27
3
AT-41532 Typical Noise Parameters,
Common Emitter, Z = 50 Ω, V = 2.7 V, I = 5 mA
O
CE
C
25
20
1.2
1
Γ
opt
Freq.
GHz
F
dB
R
G
assoc
dB
min
n
Mag
Ang
106
-165
-151
-126
-106
-86
ohms
0.8
0.6
0.4
15
10
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.2
1.4
1.5
1.7
1.9
2.2
2.5
0.283
0.41
0.44
0.53
0.60
0.67
0.71
7.3
14.0
10.7
9.8
8.5
7.5
6.6
5.8
3.9
4.8
5
9.2
gmax
dB(S|2,1|)
k
0
0.2
0
18.4
35.0
58.0
-5
0
1
2
3
4
5
6
-69
FREQUENCY (GHz)
Figure 11. Gain vs. Frequency at 2.7 V, 5 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
2*|S | |S
|
12 21
6
AT-41532 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 2.7 V, I = 10 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-122
-149
-169
161
139
107
79
dB
Mag
Ang
97
dB
Mag
Ang
68
Mag
Ang
-21
-21
-23
-28
-35
-52
-72
-95
-125
-167
134
88
0.5
0.243
0.199
0.184
0.186
0.199
0.232
0.275
0.334
0.399
0.462
0.521
0.566
0.609
0.678
0.722
18.39
15.19
12.88
9.64
7.44
4.61
2.84
1.60
0.66
-0.02
-0.67
-1.26
-1.88
-2.97
-3.38
8.310
5.751
4.408
3.034
2.354
1.700
1.387
1.202
1.079
0.997
0.926
0.865
0.805
0.711
0.678
-26.90
-23.99
-21.74
-18.35
-15.79
-11.93
-9.00
-6.66
-4.79
-3.30
-2.34
-1.89
-1.92
-2.32
-3.02
0.045
0.063
0.082
0.121
0.162
0.253
0.355
0.465
0.576
0.684
0.764
0.805
0.802
0.766
0.706
0.586
0.552
0.536
0.520
0.510
0.491
0.467
0.424
0.349
0.261
0.251
0.328
0.422
0.485
0.620
0.75
1.0
85
69
76
69
1.5
62
67
2.0
49
63
3.0
27
52
4.0
6
39
5.0
56
-12
-29
-45
-60
-75
-90
-101
-116
24
6.0
41
7
7.0
27
-12
-32
-52
-72
-91
-106
8.0
14
9.0
-2
10.0
11.0
12.0
-18
-28
-39
56
29
3
25
20
15
10
1.25
1
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
0.75
0.5
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
5
0
0.25
0
gmax
dB(S|2,1|)
k
2*|S | |S
|
12 21
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 12. Gain vs. Frequency at 2.7 V, 10 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
7
AT-41532 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 5 V, I = 2 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-79
-108
-131
-169
162
116
79
dB
Mag
Ang
121
103
89
dB
Mag
Ang
53
Mag
Ang
-18
-22
-24
-30
-37
-54
-75
-100
-131
-170
141
96
0.5
0.659
0.540
0.456
0.387
0.371
0.387
0.428
0.472
0.494
0.490
0.489
0.506
0.541
0.634
0.670
13.43
11.41
9.64
6.81
4.74
1.91
0.01
-1.31
-1.96
-1.95
-1.81
-1.84
-2.07
-2.46
-3.23
4.696
3.720
3.034
2.190
1.726
1.247
1.001
0.860
0.798
0.799
0.812
0.810
0.788
0.754
0.689
-25.16
-23.78
-23.06
-21.69
-19.63
-14.40
-9.89
-6.47
-4.05
-2.36
-1.51
-1.28
-1.51
-2.09
-2.75
0.055
0.065
0.070
0.082
0.104
0.191
0.320
0.475
0.627
0.762
0.840
0.863
0.841
0.786
0.729
0.836
0.774
0.738
0.705
0.694
0.685
0.673
0.635
0.556
0.448
0.388
0.408
0.462
0.539
0.625
0.75
1.0
48
48
1.5
69
55
2.0
53
63
3.0
27
67
4.0
7
56
5.0
49
-8
38
6.0
28
-20
-33
-48
-64
-80
-94
-109
17
7.0
13
-5
8.0
2
-29
-51
-71
-90
-105
9.0
-10
-22
-33
-39
10.0
11.0
12.0
62
35
6
AT-41532 Typical Noise Parameters,
Common Emitter, Z = 50 Ω, V = 5 V, I = 2 mA
O
CE
C
25
20
1.2
1
Γ
opt
Freq.
GHz
F
dB
R
G
assoc
dB
min
n
Mag
Ang
ohms
0.8
0.6
0.4
15
10
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.2
1.5
1.6
1.9
2.2
2.5
2.9
0.35
0.48
0.51
0.60
0.65
0.70
0.74
100
178
-166
-137
-112
-92
8.5
13.5
10.6
9.7
8.8
7.8
7.1
6.0
3.4
3.7
5
8.8
gmax
dB(S|2,1|)
k
0
0.2
0
21.7
44.6
79.5
-5
0
1
2
3
4
5
6
FREQUENCY (GHz)
-73
Figure 13. Gain vs. Frequency at 5 V, 2 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
2*|S | |S
|
12 21
8
AT-41532 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 5 V, I = 5 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-98
-124
-147
178
151
111
79
dB
Mag
Ang
107
92
dB
Mag
Ang
60
Mag
Ang
-19
-21
-23
-28
-34
-51
-69
-92
-120
-156
154
105
67
0.5
0.402
0.304
0.255
0.225
0.227
0.256
0.301
0.359
0.414
0.457
0.496
0.531
0.573
0.633
0.696
17.27
14.42
12.25
9.09
7.303
5.260
4.095
2.848
2.218
1.596
1.291
1.111
0.997
0.933
0.891
0.849
0.805
0.759
0.682
-27.15
-25.04
-23.26
-20.23
-17.66
-13.38
-9.92
-7.07
-4.78
-2.97
-1.84
-1.37
-1.44
-2.03
-2.63
0.044
0.056
0.069
0.097
0.131
0.214
0.319
0.443
0.577
0.711
0.809
0.854
0.847
0.792
0.739
0.713
0.663
0.640
0.621
0.613
0.603
0.592
0.562
0.498
0.401
0.344
0.374
0.441
0.516
0.624
0.75
1.0
61
82
63
1.5
65
66
2.0
6.92
52
65
3.0
4.06
28
59
4.0
2.22
8
48
5.0
53
0.92
-10
-26
-40
-55
-70
-85
-95
-113
33
6.0
36
-0.02
-0.60
-1.00
-1.42
-1.89
-2.40
-3.32
16
7.0
22
-4
8.0
10
-26
-49
-69
-88
-105
9.0
-4
10.0
11.0
12.0
-19
-28
-38
38
8
AT-41532 Typical Noise Parameters,
Common Emitter, Z = 50 Ω, V = 5 V, I = 5 mA
O
CE
C
25
20
1.2
1
Γ
opt
Freq.
GHz
F
dB
R
G
assoc
dB
min
n
Mag
Ang
ohms
0.8
0.6
0.4
15
10
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.1
1.4
1.5
1.7
1.9
2.2
2.4
0.29
0.41
0.44
0.53
0.60
0.67
0.71
110
-167
-153
-127
-106
-86
7.0
14.8
11.3
10.5
9.3
3.9
4.7
5
9.3
gmax
dB(S|2,1|)
k
0
0.2
0
18.6
36.8
59.5
8.4
-5
7.5
0
1
2
3
4
5
6
-70
6.7
FREQUENCY (GHz)
Figure 14. Gain vs. Frequency at 5 V, 5 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
2*|S | |S
|
12 21
9
AT-41532 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, V = 5 V, I = 10 mA
O
CE
C
S
S
S
S
22
11
21
12
Freq.
GHz
Mag
Ang
-113
-140
-162
164
140
105
76
dB
Mag
Ang
98
dB
Mag
Ang
69
Mag
Ang
-18
-19
-20
-26
-33
-49
-67
-88
-115
-149
161
110
70
0.5
0.239
0.182
0.160
0.155
0.167
0.201
0.246
0.306
0.369
0.430
0.489
0.539
0.588
0.638
0.713
18.69
15.51
13.20
9.95
7.75
4.87
3.05
1.79
0.86
0.23
-0.35
-0.91
-1.58
-3.09
-3.24
8.601
5.966
4.571
3.144
2.440
1.751
1.421
1.229
1.105
1.027
0.961
0.900
0.834
0.701
0.689
-28.05
-25.18
-22.94
-19.50
-16.89
-12.90
-9.80
-7.24
-5.11
-3.33
-2.11
-1.49
-1.45
-1.93
-2.58
0.040
0.055
0.071
0.106
0.143
0.226
0.324
0.434
0.555
0.682
0.785
0.842
0.846
0.801
0.743
0.641
0.611
0.597
0.585
0.578
0.566
0.553
0.523
0.461
0.366
0.308
0.342
0.419
0.501
0.616
0.75
1.0
86
70
78
71
1.5
63
69
2.0
51
66
3.0
29
57
4.0
9
45
5.0
54
-10
-26
-42
-58
-73
-88
-102
-115
31
6.0
40
14
7.0
27
-5
8.0
14
-26
-47
-68
-88
-104
9.0
-1
10.0
11.0
12.0
-16
-29
-38
40
9
25
20
15
10
1.25
1
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
S
S
21
12
0.75
0.5
2
MAG =
(k √k –1)
MSG = |S | /|S
|
21
2
12
2
2
1 – |S | – |S | + |D|
11
22
k =
; D = S S – S S
11 22 12 21
5
0
0.25
0
gmax
dB(S|2,1|)
k
2*|S | |S
|
12 21
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 15. Gain vs. Frequency at 5 V, 10 mA.
Note: dB(|S |) = 20 * log(|S |)
21
21
10
AT-41532 Application Information
The AT-41532 is described in a low noise amplifier for use
in the 800 to 900 MHz frequency range. The amplifier is
designed for use with .032 inch thickness FR-4 printed
circuit board material.
AT-3XX32
AT-4XX32
01/98 AJW
.062 FR-4
OUT
IN
900 MHz LNA Design
The amplifier is designed for a V of 5 volts and I of 5
CE
C
Vcc
mA. and a minimum power supply voltage of 5.25 volts.
Higher power supply voltages will require an additional
resistance to be inserted at the power supply terminal.
The amplifier schematic is shown in Figure 16.
Figure 18. 1X Artwork showing Component Placement.
A component list is shown in Figure 17. The artwork
including component placement is shown in Figure 18.
The input matching network uses a series inductor for the
noise match. Some fine tuning for lowest noise figure and
improved input VSWR can be accomplished by adding
capacitance at C2. The shunt C is accomplished with an
open circuited stub while a chip inductor is used for the
series element. The output impedance matching network
is a high pass structure consisting of a series capacitor and
shunt inductor. A resistor is paralleled across the shunt
inductor to enhance broad band stability through 10 GHz.
Bias insertion is accomplished through the use of the
shunt inductor appropriately bypassed. Surface mount
Coilcraft inductors were chosen for their small size.
OUTPUT
o
C3
C2
C1
Q1
INPUT
L1
R2
R6
Z
L3
C4
Z
o
L2
R1
R5
C5
V
= 5.25 V
CC
R4
R3
C4
Figure 16. Schematic Diagram.
Biasing
The bias network is designed for a nominal power supply
voltage of 5.25 volts. Resistors R1 and R2 are used to
adjust collector current. Resistor R4 can be attached to the
junction of R5 and C5 to improve bias point stability.
C1,C4
C2
10 pF chip capacitor
Open circuited stub – see text
2.7 pF chip capacitor
C3
C5
1000 pF chip capacitor
L1
8 nH chip inductor (Coilcraft 1008CS-080)
Optional (see R1)
L2
L3
15 nH chip inductor (Coilcraft 1008CS-150)
Avago AT-41532 Silicon Bipolar Transistor
Q1
R1
10K Ω chip resistor (may want to substitute a
180 nH chip inductor and 50 Ω resistor for
lower noise figure , better low freq stability,
then readjust R2)
R2
R3
R4
R5
R6
Zo
48 K Ω chip resistor (adjust for rated Ic)
3.32 K Ω chip resistor
3.32 K Ω chip resistor
51.1 Ω chip resistor
1.1K Ω chip resistor (see text)
50 Ω microstripline
Figure 17. Component Parts List.
11
Performance
Modifications to Original Demo Board
The measured gain of the completed amplifier is shown in
Figure 19. The gain varies
The original demo board dated 01/98 requires some
modification to work as described in this application note.
The modification is to add resistor R6 in series with the
collector lead. This is accomplished by cutting the etch at
the output of Q1 such that resistor R6 can be placed on
the circuit board as shown in Figure 17. Inductor L3 will
then have be placed at a 90 degree angle with respect to
its original intended location. L3 is then connected to the
junction of R6 and L4 with a small piece of wire or etch.
from 14 to 15 dB over the 800 to 900 MHz frequency
range. Noise figure versus frequency is shown in Figure
20. Best performance occurs at 850 MHz providing a near
1 dB noise figure.
Measured input and output return loss is shown in Figure
21. The input return loss is 10 dB at 850 MHz and can be
improved with slight tuning at C2. Output return loss was
measured at almost 10 dB at 850 MHz.
Using the AT-41532 at Other Frequencies
The demo board and design techniques presented here
can be used to build low noise amplifiers for other fre-
quencies in the VHF through 1.9 GHz frequency range.
There is considerable tuning interaction between input
and output matching networks in any single stage
amplifier. Having a somewhat better input return loss co-
incident with low noise figure may necessitate a compro-
mise in output return loss.
Output intercept point, IP , was measured at 850 MHz to
3
be +12 dBm. Removing the 1.1 KΩ resistor at R6 increases
IP to +13.6 dBm. Resistor R6 was originally added to
3
enhance stability; caution is urged when removing this
resistor or increasing its value without careful analysis.
Another alternative to the shunt resistor R6 would be to
incorporate a resistor in series with the transistor collector
lead. This resistor would be in the 10 to 27Ω range and
has similar effects on circuit stability. A third alternative
is to re-optimize the output match for power as opposed
to matching for lowest output VSWR. This may make the
output return loss less than 10 dB but it would enhance
power output.
16
14
1.6
1.5
0
-2
-4
-6
1.4
12
10
1.3
1.2
-8
-10
8
6
1.1
1
Input
-12
Output
-14
500
600
700
800
900
1000
500
600
700
800
900
1000
500
600
700
800
900
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 19. Gain vs Frequency.
Figure 20. Noise Figure vs Frequency.
Figure 21. Input/Output Return Loss.
Ordering Information
Part Numbers
No. of Devices
100
Comments
Bulk
AT-41532-BLK
AT-41532-BLKG
AT-41532-TR1
AT-41532-TR1G
AT-41532-TR2
AT-41532-TR2G
100
Bulk
3000
7" Reel
7" Reel
13" Ree
13" Reel
3000
10000
10000
Note: Order part number with a “G”suffix if lead-free option is desired.
Package Dimensions
SOT-323 Plastic Package
e1
E1
E
XXX
e
L
B
C
D
DIMENSIONS (mm)
SYMBOL
MIN.
0.80
0.00
0.15
0.08
1.80
1.10
0.65 typical
1.30 typical
1.80
0.26
MAX.
1.00
0.10
0.40
0.25
2.25
1.40
A
A1
B
C
D
E1
e
e1
E
A
A1
Notes:
XXX-package marking
Drawings are not to scale
2.40
0.46
L
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 ± 0.30
0.315 ± 0.012
t
0.255 ± 0.013 0.010 ± 0.0005
5.4 ± 0.10 0.205 ± 0.004
0.062 ± 0.001 0.0025 ± 0.00004
1
COVER TAPE
WIDTH
C
TAPE THICKNESS
T
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2650EN
AV02-1964EN - June 9, 2009
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