AT34C02-10TU-1.8 [ATMEL]

Two-wire Serial EEPROM with Permanent Software Write Protect; 两线串行EEPROM与常驻软件写保护
AT34C02-10TU-1.8
型号: AT34C02-10TU-1.8
厂家: ATMEL    ATMEL
描述:

Two-wire Serial EEPROM with Permanent Software Write Protect
两线串行EEPROM与常驻软件写保护

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总21页 (文件大小:488K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Permanent Software Write Protection for the First-half of the Array  
– Software Procedure to Verify Write Protect Status  
Hardware Write Protection for the Entire Array  
Low-voltage Operation  
– 1.8 (VCC = 1.8V to 5.5V)  
Internally Organized 256 x 8  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
100 kHz (1.8V) and 400 kHz (2.7V and 5.0V) Compatibility  
16-byte Page Write Modes  
Partial Page Writes Are Allowed  
Self-timed Write Cycle (5 ms max)  
Two-wire Serial  
EEPROM  
High-reliability  
with Permanent  
Software Write  
Protect  
– Endurance: 1 Million Write Cycles  
– Data Retention: 100 Years  
Automotive Grade Devices Available  
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead TSSOP, and 8-ball dBGA2  
Packages  
Die Sales: Wafer Form, Waffle Pack, and Bumped Wafers  
2K (256 x 8)  
Description  
The AT34C02 provides 2048 bits of serial electrically-erasable and programmable  
read only memory (EEPROM) organized as 256 words of 8 bits each. The first-half of  
the device incorporates a software write protection feature while hardware write pro-  
tection for the entire array is available via an external pin as well. Once the software  
write protection is enabled, by sending a special command to the device, it cannot be  
reversed. The hardware write protection is controlled with the WP pin and can be used  
to protect the entire array, whether or not the software write protection has been  
enabled. This allows the user to protect none, first-half, or all of the array depending  
on the application. The device is optimized for use in many industrial and commercial  
applications where low-power and low-voltage operations are essential. The AT34C02  
is available in space saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead  
TSSOP and 8-ball dBGA2 packages and is accessed via a two-wire serial interface. In  
addition, it is available in 1.8V (1.8V to 5.5V) versions.  
AT34C02  
Note: Not recommended for new  
design; please refer to  
AT34CO2C datasheet.  
Table 1. Pin Configurations  
8-lead PDIP  
8-lead MAP  
Pin Name  
A0 - A2  
SDA  
Function  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
1
2
3
4
VCC  
WP  
8
7
6
5
A0  
A1  
Address Inputs  
Serial Data  
A2  
SCL  
SDA  
SCL  
SDA  
A2  
GND  
GND  
SCL  
Serial Clock Input  
Write Protect  
WP  
Bottom View  
8-ball dBGA2  
8-lead SOIC  
8-lead TSSOP  
8
7
6
5
1
2
3
4
VCC  
WP  
A0  
A0  
A1  
A2  
1
2
3
4
8
7
6
5
VCC  
WP  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
A1  
SCL  
SDA  
A2  
SCL  
SDA  
GND  
A2  
SCL  
SDA  
GND  
GND  
Bottom View  
Rev. 0958Q–SEEPR–1/07  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect  
device reliability.  
Operating Temperature..................................–55°C to +125°C  
Storage Temperature.....................................–65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground....................................1.0V to +7.0V  
Maximum Operating Voltage .......................................... 6.25V  
DC Output Current........................................................ 5.0 mA  
Figure 1. Block Diagram  
VCC  
GND  
WP  
START  
STOP  
LOGIC  
SCL  
SDA  
SERIAL  
CONTROL  
LOGIC  
EN  
H.V. PUMP/TIMING  
DATA RECOVERY  
WRITE PROTECT  
CIRCUITRY  
LOAD  
COMP  
DEVICE  
ADDRESS  
COMPARATOR  
SOFTWARE WRITE  
PROTECTED AREA  
(00H - 7FH)  
LOAD  
INC  
A2  
A1  
A0  
R/W  
DATA WORD  
ADDR/COUNTER  
EEPROM  
Y DEC  
SERIAL MUX  
DIN  
DOUT/ACK  
LOGIC  
DOUT  
2
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
Pin Description  
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each  
EEPROM device and negative edge clock data out of each device.  
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is  
open-drain driven and may be wire-ORed with any number of other open-drain or open  
collector devices.  
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device  
address inputs that are hardwired (directly to GND or to Vcc) for compatibility with other  
AT24Cxx devices. When the pins are hardwired, as many as eight 2K devices may be  
addressed on a single bus system. (Device addressing is discussed in detail under  
“Device Addressing,” page 9.) A device is selected when a corresponding hardware and  
software match is true. If these pins are left floating, the A2, A1, and A0 pins will be  
internally pulled down to GND. However, due to capacitive coupling that may appear  
during customer applications, Atmel recommends always connecting the address pins  
to a known state. When using a pull-up resistor, Atmel recommends using 10kor less.  
WRITE PROTECT (WP): The write protect input, when connected to GND, allows nor-  
mal write operations. When WP is connected directly to Vcc, all write operations to the  
memory are inhibited. If the pin is left floating, the WP pin will be internally pulled down  
to GND. However, due to capacitive coupling that may appear during customer applica-  
tions, Atmel recommends always connecting the WP pins to a known state. When using  
a pull-up resistor, Atmel recommends using 10kor less.  
Table 2. AT34C02 Write Protection Modes  
WP Pin Status  
VCC  
Write Protect Register  
Part of the Array Write Protected  
Full Array (2K)  
GND or Floating  
Not Programmed  
Normal Read/Write  
First-Half of Array  
(1K: 00H - 7FH)  
GND or Floating  
Programmed  
Table 3. Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V  
Symbol  
CI/O  
Test Condition  
Max  
8
Units  
pF  
Conditions  
VI/O = 0V  
VIN = 0V  
Input/Output Capacitance (SDA)  
Input Capacitance (A0, A1, A2, SCL)  
CIN  
6
pF  
Note:  
1. This parameter is characterized and is not 100% tested.  
3
0958Q–SEEPR–1/07  
Table 4. DC Characteristics  
Applicable over recommended operating range from: TAI = 40°C to +85°C, VCC = +1.8V to +5.5V, TAE = 40°C to +125°C,  
V
CC = +1.8V to +5.5V (unless otherwise noted).  
Symbol  
Parameter  
Test Condition  
Min  
1.8  
2.7  
Typ  
Max  
5.5  
Units  
V
VCC1  
VCC2  
ICC  
Supply Voltage  
Supply Voltage  
5.5  
V
Supply Current VCC = 5.0V  
Supply Current VCC = 5.0V  
Standby Current VCC = 1.8V  
Standby Current VCC = 2.7V  
Standby Current VCC = 5.0V  
Input Leakage Current  
Output Leakage Current  
Input Low Level(1)  
READ at 100 kHz  
WRITE at 100 kHz  
VIN = VCC or VSS  
VIN = VCC or VSS  
VIN = VCC or VSS  
VIN = VCC or VSS  
VOUT = VCC or VSS  
0.4  
2.0  
1.0  
mA  
mA  
µA  
µA  
µA  
µA  
µA  
V
ICC  
3.0  
ISB1  
ISB2  
ISB3  
ILI  
0.6  
3.0  
1.6  
4.0  
8.0  
18.0  
3.0  
0.10  
0.05  
ILO  
3.0  
VIL  
–0.6  
VCC x 0.3  
VCC + 0.5  
0.4  
VIH  
Input High Level(1)  
VCC x 0.7  
V
VOL2  
Output Low Level VCC = 3.0V  
Output Low Level VCC = 1.8V  
IOL = 2.1 mA  
V
VOL1  
IOL = 0.15 mA  
0.2  
V
Note:  
1. VIL min and VIH max are reference only and are not tested.  
4
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
Table 5. AC Characteristics  
Applicable over recommended operating range from TAI = 40°C to +85°C, TAE = 40°C to +125°C, VCC = +1.8V to +5.5V,  
CL = 1 TTL Gate and 100 pF (unless otherwise noted).  
1.8V  
2.7V, 5.0V  
Symbol  
fSCL  
Parameter  
Min  
Max  
Min  
Max  
Units  
kHz  
µs  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Noise Suppression Time(1)  
Clock Low to Data Out Valid  
100  
400  
tLOW  
tHIGH  
tI  
4.7  
4.0  
1.2  
0.6  
µs  
100  
4.5  
50  
ns  
tAA  
0.1  
4.7  
0.1  
1.2  
0.9  
µs  
Time the bus must be free before a new  
transmission can start(1)  
µs  
tBUF  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
Start Hold Time  
4.0  
4.7  
0
0.6  
0.6  
0
µs  
µs  
µs  
ns  
µs  
ns  
µs  
ns  
ms  
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
Inputs Rise Time(1)  
Inputs Fall Time(1)  
Stop Set-up Time  
Data Out Hold Time  
Write Cycle Time  
200  
100  
1.0  
0.3  
tF  
300  
300  
tSU.STO  
tDH  
4.7  
0.6  
50  
100  
tWR  
5
5
Write  
Cycles  
1M  
1M  
Endurance(1)  
5.0V, 25°C, Page Mode  
Note:  
1. This parameter is characterized and is not 100% tested.  
5
0958Q–SEEPR–1/07  
Memory Organization AT34C02, 2K Serial EEPROM: The 2K is internally organized with 16 pages of 16 bytes  
each. Random word addressing requires a 8-bit data word address.  
Device Operation  
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-  
nal device. Data on the SDA pin may change only during SCL low time periods (see  
Figure 5 on page 8). Data changes during SCL high periods will indicate a start or stop  
condition as defined below.  
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition  
which must precede any other command (see Figure 5 on page 8).  
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.  
After a read sequence, the stop command will place the EEPROM in a standby power  
mode (see Figure 5 on page 8).  
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from  
the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has  
received each word. This happens during the ninth clock cycle.  
STANDBY MODE: The AT34C02 features a low-power standby mode which is enabled:  
(a) upon power-up or (b) after the receipt of the STOP bit and the completion of any  
internal operations.  
MEMORY RESET: After an interruption in protocol, power loss or system reset, any  
two-wire part can be reset by following these steps:  
(a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then  
(c) create a start condition.  
6
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
Figure 2. Bus Timing SCL: Serial Clock SDA: Serial Data I/O  
Figure 3. Write Cycle Timing SCL: Serial Clock SDA: Serial Data I/O  
SCL  
SDA  
ACK  
8th BIT  
WORDn  
(1)  
wr  
t
START  
CONDITION  
STOP  
CONDITION  
Note:  
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.  
Figure 4. Data Validity  
7
0958Q–SEEPR–1/07  
Figure 5. Start and Stop Condition  
Figure 6. Output Acknowledge  
8
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
Device Addressing  
The 2K EEPROM device requires an 8-bit device address word following a start condi-  
tion to enable the chip for a read or write operation (see Figure 8 on page 12).  
The device address word consists of a mandatory one-zero sequence for the first four  
most-significant bits (1010) for normal read and write operations and 0110 for writing to  
the write protect register.  
The next 3 bits are the A2, A1 and A0 device address bits for the AT34C02 EEPROM.  
These 3 bits must compare to their corresponding hard-wired input pins.  
The eighth bit of the device address is the read/write operation select bit. A read opera-  
tion is initiated if this bit is high and a write operation is initiated if this bit is low.  
Upon a compare of the device address, the EEPROM will output a zero. If a compare is  
not made, the chip will return to a standby state. The device will not acknowledge if the  
write protect register has been programmed and the control code is 0110.  
Write Operations  
BYTE WRITE: A write operation requires an 8-bit data word address following the  
device address word and acknowledgment. Upon receipt of this address, the EEPROM  
will again respond with a zero and then clock in the first 8-bit data word. Following  
receipt of the 8-bit data word, the EEPROM will output a zero and the addressing  
device, such as a microcontroller, must terminate the write sequence with a stop condi-  
tion. At this time the EEPROM enters an internally-timed write cycle, tWR, to the  
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will  
not respond until the write is complete (see Figure 9 on page 12).  
The device will acknowledge a write command, but not write the data, if the software or  
hardware write protection has been enabled. The write cycle time must be observed  
even when the write protection is enabled.  
PAGE WRITE: The 2K device is capable of 16-byte page write.  
A page write is initiated the same as a byte write, but the microcontroller does not send  
a stop condition after the first data word is clocked in. Instead, after the EEPROM  
acknowledges receipt of the first data word, the microcontroller can transmit up to fifteen  
more data words. The EEPROM will respond with a zero after each data word received.  
The microcontroller must terminate the page write sequence with a stop condition (see  
Figure 10 on page 13).  
The data word address lower four bits are internally incremented following the receipt of  
each data word. The higher data word address bits are not incremented, retaining the  
memory page row location. When the word address, internally generated, reaches the  
page boundary, the following byte is placed at the beginning of the same page. If more  
than sixteen data words are transmitted to the EEPROM, the data word address will “roll  
over” and previous data will be overwritten. The address “roll over” during write is from  
the last byte of the current page to the first byte of the same page.  
The device will acknowledge a write command, but not write the data, if the software or  
hardware write protection has been enabled. The write cycle time must be observed  
even when the write protection is enabled.  
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the  
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves send-  
ing a start condition followed by the device address word. The read/write bit is  
representative of the operation desired. Only if the internal write cycle has completed  
will the EEPROM respond with a zero allowing the read or write sequence to continue.  
9
0958Q–SEEPR–1/07  
Write Protection  
The software write protection, once enabled, permanently write protects only the first-  
half of the array (00H - 7FH) while the hardware write protection, via the WP pin, is used  
to protect the entire array.  
SOFTWARE WRITE PROTECTION: The software write protection is enabled by send-  
ing a command, similar to a normal write command, to the device which programs the  
write protect register. This must be done with the WP pin low. The write protect register  
is programmed by sending a write command with the device address of 0110 instead of  
1010 with the address and data bit being don’t cares (see Figure 7 on page 11). Once  
the software write protection has been enabled, the device will no longer acknowledge  
the 0110 control byte. The software write protection cannot be reversed even if the  
device is powered down. The write cycle time must be observed.  
HARDWARE WRITE PROTECTION: The WP pin can be connected to VCC, GND, or  
left floating. Connecting the WP pin to VCC will write protect the entire array, regardless  
of whether or not the software write protection has been enabled. The software write  
protection register cannot be programmed when the WP pin is connected to VCC. If the  
WP pin is connected to GND or left floating, the write protection mode is determined by  
the status of the software write protect register.  
10  
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
WP Connected to GND or Floating  
Acknowledgment  
from Device  
Start R/W Bit Write Protect Register  
Action from Device  
1010  
1010  
1010  
0110  
0110  
0110  
0110  
R
W
W
R
X
ACK  
ACK  
Read Array  
Programmed  
Not Programmed  
Programmed  
Not Programmed  
Programmed  
Not Programmed  
Can Write to Second Half (80H - FFH) Only  
Can Write to Full Array  
ACK  
No ACK  
ACK  
Stop - Indicates Write Protect Register is Programmed  
Read Out Data Don’t Care. Indicates WP Register is Not Prog  
Stop - Indicates Write Protect Register is Programmed  
Program Write Protect Register (irreversible)  
R
W
W
No ACK  
ACK  
WP Connected to VCC  
1010  
1010  
1010  
0110  
0110  
0110  
0110  
R
W
W
R
X
ACK  
ACK  
Read Array  
Programmed  
Not Programmed  
Programmed  
Not Programmed  
Programmed  
Not Programmed  
Device Write Protect  
ACK  
Device Write Protect  
No ACK  
ACK  
Stop - Indicates Write Protect Register is Programmed  
Read Out Data Don’t Care. Indicates WP Register is Not Prog  
Stop - Indicates Write Protect Register is Programmed  
Cannot Program Write Protect Register  
R
W
W
No ACK  
ACK  
Figure 7. Setting Write Protect Register  
S
CONTROL  
BYTE  
WORD  
ADDRESS  
T
A
R
T
S
T
DATA  
O
P
SDA LINE  
0 1 1 0  
0
A
C
K
A
C
K
A
C
K
= Don't Care  
Read Operations  
Read operations are initiated the same way as write operations with the exception that  
the read/write select bit in the device address word is set to one. There are three read  
operations: current address read, random address read and sequential read.  
CURRENT ADDRESS READ: The internal data word address counter maintains the  
last address accessed during the last read or write operation, incremented by one. This  
address stays valid between operations as long as the chip power is maintained. The  
address “roll over” during read is from the last byte of the last memory page to the first  
byte of the first page.  
Once the device address with the read/write select bit set to one is clocked in and  
acknowledged by the EEPROM, the current address data word is serially clocked out.  
To end the command, the microcontroller does not respond with an input zero but does  
generate a following stop condition (see Figure 11 on page 13).  
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the  
data word address. Once the device address word and data word address are clocked  
11  
0958Q–SEEPR–1/07  
in and acknowledged by the EEPROM, the microcontroller must generate another start  
condition. The microcontroller now initiates a current address read by sending a device  
address with the read/write select bit high. The EEPROM acknowledges the device  
address and serially clocks out the data word. To end the command, the microcontroller  
does not respond with a zero but does generate a following stop condition (see Figure  
12 on page 13).  
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or  
a random address read. After the microcontroller receives a data word, it responds with  
an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to  
increment the data word address and serially clock out sequential data words. When the  
memory address limit is reached, the data word address will “roll over” and the sequen-  
tial read will continue. The sequential read operation is terminated when the  
microcontroller does not respond with a zero but does generate a following stop condi-  
tion (see Figure 13 on page 13).  
WRITE PROTECT REGISTER STATUS: To find out if the register has been pro-  
grammed, the same procedure is used as to program the register except that the R/W  
bit is set to 1. If the device acknowledges, then the write protect register has not been  
programmed. Otherwise, it has been programmed and the device is permanently write  
protected at the first half of the array.  
Figure 8. Device Address  
Figure 9. Byte Write  
12  
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
Figure 10. Page Write  
Figure 11. Current Address Read  
Figure 12. Random Read  
Figure 13. Sequential Read  
13  
0958Q–SEEPR–1/07  
Ordering Information(1)  
Ordering Code  
Package  
Operation Range  
AT34C02-10PU-1.8(2)  
AT34C02N-10SU-1.8(2)  
AT34C02-10TU-1.8(2)  
AT34C02Y1-10YU-1.8(2)  
AT34C02U3-10UU-1.8(2)  
8P3  
8S1  
Lead-free/Halogen-free/  
Industrial Temperature  
(–40°C to 85°C)  
8A2  
8Y1  
8U3-1  
AT34C02N-10SE-2.7  
AT34C02-10TE-2.7  
8S1  
8A2  
Automotive  
(–40°C to 125°C)  
AT34C02N-10SQ-2.7(2)  
AT34C02-10TQ-2.7(2)  
8S1  
8A2  
Lead-free/Halogen-free/Automotive  
(–40°C to 125°C)  
AT34C02-W1.8-11(3)  
Die Sale  
Industrial Temperature  
(–40°C to 85°C)  
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics  
Tables.  
2. “U” and “Q” designate Green package + RoHS compliant.  
3. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please  
contact Serial EEPROM Marketing.  
Package Type  
8P3  
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)  
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)  
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)  
8-ball, die Ball Grid Array Package (dBGA2)  
8S1  
8A2  
8Y1  
8U3-1  
Options  
–1.8  
Low Voltage (1.8V to 5.5V)  
14  
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
Packaging Information  
8P3 – PDIP  
E
1
E1  
N
Top View  
c
eA  
End View  
COMMON DIMENSIONS  
(Unit of Measure = inches)  
D
e
MIN  
MAX  
NOM  
NOTE  
SYMBOL  
D1  
A2 A  
A
0.210  
0.195  
0.022  
0.070  
0.045  
0.014  
0.400  
2
A2  
b
0.115  
0.014  
0.045  
0.030  
0.008  
0.355  
0.005  
0.300  
0.240  
0.130  
0.018  
0.060  
0.039  
0.010  
0.365  
5
6
6
b2  
b3  
c
D
3
3
4
3
b2  
L
D1  
E
b3  
4 PLCS  
0.310  
0.250  
0.325  
0.280  
b
E1  
e
0.100 BSC  
0.300 BSC  
0.130  
Side View  
eA  
L
4
2
0.115  
0.150  
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.  
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.  
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.  
4. E and eA measured with the leads constrained to be perpendicular to datum.  
5. Pointed or rounded lead tips are preferred to ease insertion.  
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).  
01/09/02  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8P3, 8-lead, 0.300" Wide Body, Plastic Dual  
In-line Package (PDIP)  
8P3  
B
R
15  
0958Q–SEEPR–1/07  
8S1 – JEDEC SOIC  
C
1
E
E1  
L
N
Top View  
End View  
e
B
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
NOTE  
SYMBOL  
A1  
A
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
0.51  
0.25  
5.00  
3.99  
6.20  
C
D
E1  
E
e
D
Side View  
1.27 BSC  
L
0.40  
0˚  
1.27  
8˚  
Note:  
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.  
10/7/03  
REV.  
TITLE  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing  
8S1  
B
R
Small Outline (JEDEC SOIC)  
16  
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
8A2 – TSSOP  
3
2 1  
Pin 1 indicator  
this corner  
E1  
E
L1  
N
L
Top View  
End View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
NOM  
3.00  
NOTE  
SYMBOL  
D
2.90  
3.10  
2, 5  
A
b
E
6.40 BSC  
4.40  
E1  
A
4.30  
4.50  
1.20  
1.05  
0.30  
3, 5  
4
A2  
b
0.80  
0.19  
1.00  
e
A2  
D
e
0.65 BSC  
0.60  
L
0.45  
0.75  
Side View  
L1  
1.00 REF  
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,  
datums, etc.  
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed  
0.15 mm (0.006 in) per side.  
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm  
(0.010 in) per side.  
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the  
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between  
protrusion and adjacent lead is 0.07 mm.  
5. Dimension D and E1 to be determined at Datum Plane H.  
5/30/02  
DRAWING NO.  
TITLE  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8A2, 8-lead, 4.4 mm Body, Plastic  
Thin Shrink Small Outline Package (TSSOP)  
B
8A2  
R
17  
0958Q–SEEPR–1/07  
8Y1 – MAP  
PIN 1 INDEX AREA  
A
1
3
4
2
PIN 1 INDEX AREA  
E1  
D1  
D
L
8
6
5
7
b
e
A1  
E
Bottom View  
End View  
Top View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
SYMBOL  
MIN  
MAX  
0.90  
0.05  
5.10  
3.20  
1.15  
1.15  
0.35  
NOM  
NOTE  
A
A1  
D
0.00  
4.70  
2.80  
0.85  
0.85  
0.25  
4.90  
3.00  
1.00  
1.00  
0.30  
0.65 TYP  
0.60  
Side View  
E
D1  
E1  
b
e
L
0.50  
0.70  
2/28/03  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package  
(MAP) Y1  
8Y1  
C
R
18  
AT34C02  
0958Q–SEEPR–1/07  
AT34C02  
8U3-1 – dBGA2  
E
D
1.  
b
A1  
PIN 1 BALL PAD CORNER  
A2  
Top View  
A
PIN 1 BALL PAD CORNER  
Side View  
1
2
3
4
(d1)  
d
7
6
5
8
e
COMMON DIMENSIONS  
(Unit of Measure = mm)  
(e1)  
MIN  
0.71  
0.10  
0.40  
0.20  
MAX  
0.91  
0.20  
0.50  
0.30  
NOM  
0.81  
NOTE  
SYMBOL  
Bottom View  
8 SOLDER BALLS  
A
A1  
A2  
b
0.15  
0.45  
0.25  
D
1.50 BSC  
2.00 BSC  
0.50 BSC  
0.25 REF  
1.00 BSC  
0.25 REF  
1. Dimension “b” is measured at the maximum solder ball diameter.  
This drawing is for general information only.  
E
e
e1  
d
d1  
6/24/03  
TITLE  
REV.  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,  
PO8U3-1  
A
R
Small Die Ball Grid Array Package (dBGA2)  
19  
0958Q–SEEPR–1/07  
Revision History  
Doc. Rev.  
Date  
Comments  
0958Q  
1/2007  
Revision history implemented.  
Added Note to Page 1: Not recommended for new design;  
please refer to AT34CO2C datasheet.  
20  
AT34C02  
0958Q–SEEPR–1/07  
Atmel Corporation  
Atmel Operations  
USA  
Memory  
RF/Automotive  
2325 Orchard Parkway  
San Jose, CA 95131  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
2325 Orchard Parkway  
San Jose, CA 95131  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Theresienstrasse 2  
Postfach 3535  
74025 Heilbronn, Germany  
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Fax: (49) 71-31-67-2340  
Microcontrollers  
Regional Headquarters  
2325 Orchard Parkway  
San Jose, CA 95131  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
Tel: 1(719) 576-3300  
Europe  
Atmel Sarl  
Fax: 1(719) 540-1759  
Route des Arsenaux 41  
Case Postale 80  
CH-1705 Fribourg  
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Tel: (41) 26-426-5555  
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Biometrics/Imaging/Hi-Rel MPU/  
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Tel: (33) 2-40-18-18-18  
Fax: (33) 2-40-18-19-60  
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Fax: 1(719) 540-1759  
9F, Tonetsu Shinkawa Bldg.  
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Japan  
Tel: (81) 3-3523-3551  
Fax: (81) 3-3523-7581  
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Tel: (44) 1355-803-000  
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Literature Requests  
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