AT34C02C-TH-B [ATMEL]
Two-wire Serial EEPROM with Permanent and Reversible Software Write Protect 2K (256 x 8); 两线串行EEPROM与永久及可逆软件写保护2K （ 256 ×8 ）
| 型号： | AT34C02C-TH-B |
| 厂家： | 
ATMEL |
| 描述： | Two-wire Serial EEPROM with Permanent and Reversible Software Write Protect 2K (256 x 8) |
| 文件： | 总25页 (文件大小：660K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Permanent and Reversible Software Write Protection for the First-half of the Array
– Software Procedure to Verify Write Protect Status
• Hardware Write Protection for the Entire Array
• Low-voltage and Standard-voltage Operation
– 1.7 (VCC = 1.7V to 5.5V)
• Internally Organized 256 x 8
• Two-wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• 100 kHz (1.7V) and 400 kHz (2.7V and 5.0V) Compatibility
• 16-byte Page Write Modes
Two-wire Serial
EEPROM
• Partial Page Writes Are Allowed
with Permanent
and Reversible
Software Write
Protect
• Self-timed Write Cycle (5 ms max)
• High-reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
• 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 8-lead TSSOP, and 8-ball
dBGA2 Packages
• Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers
2K (256 x 8)
Description
The AT34C02C provides 2048 bits of serial electrically-erasable and programmable
read only memory (EEPROM) organized as 256 words of 8 bits each. The first-half of
the device incorporates a permanent and a reversible software write protection fea-
ture while hardware write protection for the entire array is available via an external pin.
Once the permanent software write protection is enabled, by sending a special com-
mand to the device, it cannot be reversed. However, the reversible software write
protection is enabled and can be reversed by sending a special command. The hard-
ware write protection is controlled with the WP pin and can be used to protect the
entire array, whether or not the software write protection has been enabled. This
allows the user to protect none, first-half, or all of the array depending on the applica-
tion. The device is optimized for use in many industrial and commercial applications
where low-power and low-voltage operations are essential. The AT34C02C is avail-
able in space saving 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 8-lead
TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire serial interface.
AT34C02C
It is available in 1.7V (1.7V to 5.5V).
8-lead Ultra Thin Mini-MAP
8
7
6
5
1
2
3
4
A0
A1
VCC
WP
8-ball dBGA2
SCL
SDA
A2
GND
8-lead TSSOP
8
7
6
5
1
2
3
4
A0
VCC
WP
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
A1
(MLP 2x3) Bottom View
8-lead SOIC
A2
SCL
SDA
A2
SCL
SDA
GND
GND
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
Bottom View
A2
SCL
SDA
GND
Rev. 5185D–SEEPR–1/08
Table 0-1.
Pin Name
A0 - A2
SDA
Pin Configurations
Function
Address Inputs
Serial Data
SCL
Serial Clock Input
Write Protect
WP
1. Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Operating Temperature..................................–55°C to +125°C
Storage Temperature.....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground....................................–1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1-1. Block Diagram
VCC
GND
WP
START
STOP
LOGIC
SCL
SDA
SERIAL
CONTROL
LOGIC
EN
H.V. PUMP/TIMING
DATA RECOVERY
WRITE PROTECT
CIRCUITRY
LOAD
COMP
DEVICE
ADDRESS
COMPARATOR
SOFTWARE WRITE
PROTECTED AREA
(00H - 7FH)
LOAD
INC
A2
A1
A0
R/W
DATA WORD
ADDR/COUNTER
EEPROM
Y DEC
SERIAL MUX
DIN
DOUT/ACK
LOGIC
DOUT
2
AT34C02C
5185D–SEEPR–1/08
AT34C02C
2. Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM
device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-
drain driven and may be wire-ORed with any number of other open-drain or open collector
devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device address inputs
that are hardwired (directly to GND or to Vcc) for compatibility with other AT24Cxx devices.
When the pins are hardwired, as many as eight 2K devices may be addressed on a single bus
system. (Device addressing is discussed in detail under “Device Addressing,” page 9.) A device
is selected when a corresponding hardware and software match is true. If these pins are left
floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to capaci-
tive coupling that may appear during customer applications, Atmel recommends always
connecting the address pins to a known state. When using a pull-up resistor, Atmel recommends
using 10kΩ or less.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write
operations. When WP is connected directly to Vcc, all write operations to the memory are inhib-
ited. If the pin is left floating, the WP pin will be internally pulled down to GND. However, due to
capacitive coupling that may appear during customer applications, Atmel recommends always
connecting the WP pins to a known state. When using a pull-up resistor, Atmel recommends
using 10kΩ or less.
Table 2-1.
AT34C02C Write Protection Modes
Permanent Write Protect
Reversible Write Protect
Register
Part of the Array Write
Protected
WP Pin Status
Register
VCC
–
–
Full Array (2K)
GND or Floating
Not Programmed
Not Programmed
Normal Read/Write
First-Half of Array
(1K: 00H - 7FH)
GND or Floating
GND or Floating
Programmed
–
–
First-Half of Array
(1K: 00H - 7FH)
Programmed
Table 2-2.
Applicable over recommended operating range from TA = 25°C, f = 100 kHz, VCC = +1.7V
Pin Capacitance(1)
Symbol
CI/O
Test Condition
Max
8
Units
pF
Conditions
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
VI/O = 0V
VIN = 0V
CIN
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
3
5185D–SEEPR–1/08
Table 2-3.
DC Characteristics
Applicable over recommended operating range from: TAI = –40°C to +85°C, VCC = +1.7V to +5.5V, (unless otherwise noted)
Symbol
VCC
ICC
Parameter
Test Condition
Min
Typ
Max
5.5
Units
V
Supply Voltage
1.7
Supply Current VCC = 5.0V
Supply Current VCC = 5.0V
Standby Current VCC = 1.7V
Standby Current VCC = 3.6V
Standby Current VCC = 5.5V
Input Leakage Current
Output Leakage Current
Input Low Level(1)
READ at 100 kHz
WRITE at 100 kHz
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VOUT = VCC or VSS
0.4
2.0
1.0
mA
mA
µA
µA
µA
µA
µA
V
ICC
3.0
ISB1
ISB2
ISB3
ILI
0.6
3.0
1.6
4.0
8.0
18.0
3.0
0.10
0.05
ILO
3.0
VIL
–0.6
VCC x 0.3
VCC + 0.5
0.4
VIH
Input High Level(1)
VCC x 0.7
V
VOL2
VOL1
Output Low Level VCC = 3.0V
Output Low Level VCC = 1.7V
IOL = 2.1 mA
V
IOL = 0.15 mA
0.2
V
Note:
1. VIL min and VIH max are reference only and are not tested.
Table 2-4.
AC Characteristics
Applicable over recommended operating range from TAI = –40°C to +85°C, VCC = +1.7V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
1.7V
2.7V, 5.0V
Symbol
fSCL
Parameter
Min
Max
Min
Max
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Noise Suppression Time(1)
Clock Low to Data Out Valid
100
400
tLOW
tHIGH
tI
4.7
4.0
1.2
0.6
µs
100
4.5
50
ns
tAA
0.1
4.7
0.1
1.2
0.9
µs
Time the bus must be free before a new
transmission can start(1)
tBUF
µs
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
4.0
4.7
0
0.6
0.6
0
µs
µs
µs
ns
µs
ns
µs
Start Set-up Time
Data In Hold Time
Data In Set-up Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Set-up Time
200
100
1.0
0.3
tF
300
300
tSU.STO
4.7
0.6
4
AT34C02C
5185D–SEEPR–1/08
AT34C02C
Table 2-4.
AC Characteristics
Applicable over recommended operating range from TAI = –40°C to +85°C, VCC = +1.7V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
1.7V
2.7V, 5.0V
Symbol
tDH
Parameter
Min
Max
Min
Max
Units
ns
Data Out Hold Time
Write Cycle Time
100
50
tWR
5
5
ms
Write
Cycles
Endurance(1)
25°C, Page Mode
1M
1M
Note:
1. This parameter is characterized and is not 100% tested.
3. Memory Organization
AT34C02C, 2K Serial EEPROM: The 2K is internally organized with 16 pages of 16 bytes each.
Random word addressing requires a 8-bit data word address.
5
5185D–SEEPR–1/08
4. Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4-3 on
page 7). Data changes during SCL high periods will indicate a start or stop condition as defined
below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
must precede any other command (see Figure 4-4 on page 7).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-
ure 4-4 on page 7).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each
word. This happens during the ninth clock cycle.
STANDBY MODE: The AT34C02C features a low-power standby mode which is enabled: (a)
upon power-up or (b) after the receipt of the STOP bit and the completion of any internal
operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any Two-wire
part can be reset by following these steps:
(a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then (c) create
a start condition.
Figure 4-1. Bus Timing SCL: Serial Clock SDA: Serial Data I/O
6
AT34C02C
5185D–SEEPR–1/08
AT34C02C
Figure 4-2. Write Cycle Timing SCL: Serial Clock SDA: Serial Data I/O
SCL
ACK
SDA
8th BIT
WORDn
(1)
wr
t
START
STOP
CONDITION
CONDITION
Note:
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
Figure 4-3. Data Validity
Figure 4-4. Start and Stop Condition
7
5185D–SEEPR–1/08
Figure 4-5. Output Acknowledge
5. Device Addressing
The 2K EEPROM device requires an 8-bit device address word following a start condition to
enable the chip for a read or write operation (see Figure 8-1 on page 13).
The device address word consists of a mandatory one-zero sequence for the first four most-sig-
nificant bits (1010) for normal read and write operations and 0110 for writing to the write protect
register.
The next 3 bits are the A2, A1 and A0 device address bits for the AT34C02C EEPROM. These 3
bits must compare to their corresponding hard-wired input pins.
The eighth bit of the device address is the read/write operation select bit. A read operation is ini-
tiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the chip will return to a standby state. The device will not acknowledge if the write protect
register has been programmed and the control code is 0110.
6. Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a zero and the addressing device, such as a microcontroller,
must terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write is complete (see Figure 8-2 on page
13).
The device will acknowledge a write command, but not write the data, if the software or hard-
ware write protection has been enabled. The write cycle time must be observed even when the
write protection is enabled.
PAGE WRITE: The 2K device is capable of 16-byte page write.
8
AT34C02C
5185D–SEEPR–1/08
AT34C02C
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to fifteen more data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 1 on page 13).
The data word address lower four bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the fol-
lowing byte is placed at the beginning of the same page. If more than sixteen data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
The device will acknowledge a write command, but not write the data, if the software or hard-
ware write protection has been enabled. The write cycle time must be observed even when the
write protection is enabled.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a zero allowing the read or write sequence to continue.
7. Write Protection
The software write protection, once enabled, write protects only the first-half of the array (00H -
7FH) while the hardware write protection, via the WP pin, is used to protect the entire array.
PERMANENT SOFTWARE WRITE PROTECTION: The software write protection is enabled by
sending a command, similar to a normal write command, to the device which programs the per-
manent write protect register. This must be done with the WP pin low. The write protect register
is programmed by sending a write command with the device address of 0110 instead of 1010
with the address and data bit being don’t cares (see Figure 7-1 on page 10). Once the software
write protection has been enabled, the device will no longer acknowledge the 0110 control byte.
The software write protection cannot be reversed even if the device is powered down. The write
cycle time must be observed.
REVERSIBLE SOFTWARE WRITE PROTECTION: The reversible software write protection is
enabled by sending a command, similar to a normal write command, to the device which pro-
grams the reversible write protect register. This must be done with the WP pin low. The write
protect register is programmed by sending a write command 01100010 with pins A2 and A1 tied
to ground or don't connect and pin A0 connected to VHV (see Figure 7-2). The reversible write
protection can be reversed by sending a command 01100110 with pin A2 tied to ground or no
connect, pin A1 tied to VCC and pin A0 tied to VHV (see Figure 7-3).
HARDWARE WRITE PROTECTION: The WP pin can be connected to VCC, GND, or left float-
ing. Connecting the WP pin to VCC will write protect the entire array, regardless of whether or not
the software write protection has been enabled. The software write protection register cannot be
programmed when the WP pin is connected to VCC. If the WP pin is connected to GND or left
floating, the write protection mode is determined by the status of the software write protect
register.
9
5185D–SEEPR–1/08
Figure 7-1. Setting Permanent Write Protect Register (PSWP)
S
CONTROL
BYTE
WORD
ADDRESS
T
A
R
T
S
T
DATA
DATA
DATA
O
P
SDA LINE
0 1
1 0 A2 A1 A0 0
A
C
K
A
C
K
A
C
K
= Don't Care
Figure 7-2. Setting Reversible Write Protect Register (RSWP)
S
CONTROL
BYTE
WORD
ADDRESS
T
A
R
T
S
T
O
P
SDA LINE
0 1
1 0 0 0 1 0
A
C
K
A
C
K
A
C
K
= Don't Care
Figure 7-3. Clearing Reversible Write Protect Register (RSWP)
S
CONTROL
BYTE
WORD
ADDRESS
T
A
R
T
S
T
O
P
SDA LINE
0 1
1
0 0 1 1 0
A
C
K
A
C
K
A
C
K
= Don't Care
Table 7-1.
Write Protection
Pin
Preamble
RW
B0
0
Command
Set PSWP
Set RSWP
Clear RSWP
A2
A2
0
A1
A1
0
A0
B7
0
B6
1
B5
1
B4
0
B3
A2
0
B2
B1
A0
1
A0
A1
0
VHV
VHV
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
Table 7-2.
VHV
Min
Max
10
Units
VHV
7
V
Note:
VHV - VCC > 4.8V
10
AT34C02C
5185D–SEEPR–1/08
AT34C02C
Table 7-3.
WP Connected to GND or Floating
WP Connected to GND or Floating
Permanent
Write Protect
Register
Reversible
Write Protect
Acknowledgme
Command
1010
R/W Bit
PSWP
Register RSWP
nt from Device
Action from Device
R
W
W
W
X
Programmed
X
X
X
ACK
ACK
ACK
ACK
1010
Can write to second Half (80H - FFH) only
Can write to second Half (80H - FFH) only
Can write to full array
1010
Programmed
Not Programmed
1010
Not Programmed
STOP - Indicates permanent write protect register is
programmed
Read PSWP
Read PSWP
Set PSWP
Set PSWP
R
R
Programmed
Not Programmed
Programmed
X
X
X
X
No ACK
ACK
Read out data don't care. Indicates PSWP register
is not programmed
STOP - Indicates permanent write protect register is
programmed
W
W
No ACK
ACK
Program permanent write protect register
(irreversible)
Not Programmed
STOP - Indicates reversible write protect register is
programmed
Read RSWP
Read RSWP
R
R
X
X
Programmed
No ACK
ACK
Read out data don't care. Indicates RSWP register
is not programmed
Not Programmed
STOP - Indicates reversible write protect register is
programmed
Set RSWP
Set RSWP
Clear RSWP
W
W
W
X
X
Programmed
Not Programmed
X
No ACK
ACK
Program reversible write protect register (reversible)
STOP - Indicates permanent write protect register is
programmed
Programmed
No ACK
Clear (unprogram) reversible write protect register
(reversible)
Clear RSWP
W
Not Programmed
X
ACK
Table 7-4.
WP Connected to Vcc
WP Connected to Vcc
Comman
Permanent
Write Protect
Reversible
Write Protect
Acknowledgme
d
R/W Bit Register PSWP Register RSWP
nt from Device
Action from Device
Read array
1010
1010
R
X
X
X
X
ACK
ACK
W
Device Write Protect
Read
PSWP
STOP - Indicates permanent write protect register is
programmed
R
R
Programmed
X
X
No ACK
ACK
Read
PSWP
Read out data don't care. Indicates PSWP register is
not programmed
Not Programmed
11
5185D–SEEPR–1/08
WP Connected to Vcc
STOP - Indicates permanent write protect register is
programmed
Set PSWP
Set PSWP
W
W
Programmed
X
X
No ACK
ACK
Not Programmed
Cannot program write protect registers
Read
RSWP
STOP - Indicates reversible write protect register is
programmed
R
R
X
X
Programmed
No ACK
ACK
Read
RSWP
Read out data don't care. Indicates RSWP register is
not programmed
Not Programmed
STOP - Indicates reversible write protect register is
programmed
Set RSWP
Set RSWP
W
W
W
X
X
Programmed
Not Programmed
X
No ACK
ACK
Cannot program write protect registers
Clear
RSWP
STOP - Indicates permanent write protect register is
programmed
Programmed
No ACK
Clear
RSWP
W
Not Programmed
X
ACK
Cannot write to write protect registers
8. Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page to the first byte of the first page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. To end the command,
the microcontroller does not respond with an input zero but does generate a following stop con-
dition (see Figure 8-3 on page 14).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. To end the command, the microcontroller does not respond with a zero but
does generate a following stop condition (see Figure 8-4 on page 14).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a zero
but does generate a following stop condition (see Figure 8-5 on page 14).
12
AT34C02C
5185D–SEEPR–1/08
AT34C02C
PERMANENT WRITE PROTECT REGISTER (PSWP) STATUS: To find out if the register has
been programmed, the same procedure is used as to program the register except that the
R/W bit is set to 1. If the device sends an acknowledge, then the permanent write protect
register has not been programmed. Otherwise, it has been programmed and the device is
permanently write protected at the first half of the array.
Table 8-1.
PSWP Status
Pin
Preamble
RW
B0
1
Command
A2
A1
A0
B7
B6
B5
B4
B3
B2
B1
Read PSWP
A2
A1
A0
0
1
1
0
A2
A1
A0
REVERSIBLE WRITE PROTECT REGISTER(RSWP) STATUS: To find out if the register has
been programmed, the same procedure is used as to program the register except that the
R/W bit is set to 1. If the sends an device acknowledge, then the reversible write protect
register has not been programmed. Otherwise, it has been programmed and the device is
write protected (reversible) at the first half of the array.
Figure 8-1. Device Address
Figure 8-2. Byte Write
Figure 1. Page Write
13
5185D–SEEPR–1/08
Figure 8-3. Current Address Read
Figure 8-4. Random Read
Figure 8-5. Sequential Read
14
AT34C02C
5185D–SEEPR–1/08
AT34C02C
AT34C02C Ordering Information
Ordering Code
Package
8S1
Operation Range
AT34C02CN-SH-B(1) (NiPdAu Lead Finish)
AT34C02CN-SH-T(2)(NiPdAu Lead Finish)
AT34C02C-TH-B(1) (NiPdAu Lead Finish)
AT34C02C-TH-T(2) (NiPdAu Lead Finish)
AT34C02CY6-YH-T(2)(NiPdAu Lead Finish)
AT34C02CU3-UU-T(2)
8S1
Lead-free/Halogen-free/
Industrial Temperature
8A2
8A2
(–40°C to 85°C)
8Y6
8U3-1
Notes: 1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel; TSSOP, Ultra Thin Mini MAP and dBGA2 = 5K per reel.
Package Type
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)
8-ball, die Ball Grid Array Package (dBGA2)
8S1
8A2
8Y6
8U3-1
Options
–1.7
Low Voltage (1.7V to 5.5V)
15
5185D–SEEPR–1/08
9. New part marking
9.3
8-TSSOP
TOP MARK
Pin 1 Indicator (Dot)
|
|---|---|---|---|
*
H
Y
W
W
|---|---|---|---|---|
1 *
|---|---|---|---|---|
3
4
C
BOTTOM MARK
|---|---|---|---|---|---|---|
Country of Origin
Atmel Lot #
C
0
0
|---|---|---|---|---|---|---|
A
A
A
A
A
A
A
|---|---|---|---|---|---|---|
<- Pin 1 Indicator
Y = SEAL YEAR
WW = SEAL WEEK
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
52 = Week 52
1: 2011
2: 2012
3: 2013
16
AT34C02C
5185D–SEEPR–1/08
AT34C02C
9.4
8-SOIC
Seal Year
TOP MARK
|
|
Seal Week
|
|
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
|---|---|---|---|---|---|---|---|
3
4
C
1
|---|---|---|---|---|---|---|---|
Lot Number
*
|---|---|---|---|---|---|---|---|
|
Pin 1 Indicator (Dot)
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
52 = Week 52
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
17
5185D–SEEPR–1/08
9.5
8-Ultra Thin Mini MAP
TOP MARK
|---|---|---|
3
4
C
|---|---|---|
H
1
|---|---|---|
Y
X
X
|---|---|---|
*
|
Pin 1 Indicator (Dot)
Y = YEAR OF ASSEMBLY
XX = ATMEL LOT NUMBER TO COORESPOND WITH
NSEB TRACE CODE LOG BOOK.
(e.g. XX = AA, AB, AC,...AX, AY, AZ)
Y = SEAL YEAR
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
18
AT34C02C
5185D–SEEPR–1/08
AT34C02C
9.6
dBGA2
TOP MARK
LINE 1------->
LINE 2------->
34CU
YMTC
|<-- Pin 1 This Corner
Y = ONE DIGIT YEAR CODE
4: 2004
5: 2005
6: 2006
7: 2007
8: 2008
9: 2009
M = SEAL MONTH (USE ALPHA DESIGNATOR A-L)
A = JANUARY
B = FEBRUARY
" " """""""
J = OCTOBER
K = NOVEMBER
L = DECEMBER
TC = TRACE CODE (ATMEL LOT
NUMBERS TO CORRESPOND
WITH ATK TRACE CODE LOG BOOK)
19
5185D–SEEPR–1/08
10. Packaging Information
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
–
–
D
–
–
Side View
e
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
∅
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
REV.
TITLE
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
B
R
Small Outline (JEDEC SOIC)
20
AT34C02C
5185D–SEEPR–1/08
AT34C02C
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
3.00
NOTE
SYMBOL
D
2.90
3.10
2, 5
A
b
E
6.40 BSC
4.40
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
A2
b
0.80
0.19
1.00
e
A2
–
D
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
DRAWING NO.
TITLE
REV.
2325 Orchard Parkway
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
B
8A2
R
21
5185D–SEEPR–1/08
8Y6 – Mini-MAP
A
D2
b
((88XX))
Pin 11
Inddeexx
Areaa
Pin 1 ID
L (8X)
D
e (6X)
A2
A1
1.500 RREEFF..
A3
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
2.00 BSC
3.00 BSC
1.50
NOTE
SYMBOL
D
E
D2
E2
A
1.40
1.60
1.40
0.60
0.05
0.55
-
-
-
-
A1
A2
A3
L
0.0
-
0.02
-
0.20 REF
0.30
0.20
0.20
0.40
0.30
e
0.50 BSC
0.25
b
2
Notes:
1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
3. Soldering the large thermal pad is optional, but not recommended. No electrical connection is accomplished to the
device through this pad, so if soldered it should be tied to ground
10/16/07
DRAWING NO. REV.
TITLE
2325 Orchard Parkway
San Jose, CA 95131
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
Dual No Lead Package (DFN) ,(MLP 2x3)
8Y6
D
R
22
AT34C02C
5185D–SEEPR–1/08
AT34C02C
8U3-1 – dBGA2
E
D
1.
b
A1
PIN 1 BALL PAD CORNER
A2
Top View
A
PIN 1 BALL PAD CORNER
Side View
1
2
3
4
(d1)
d
7
6
5
8
e
COMMON DIMENSIONS
(Unit of Measure = mm)
(e1)
MIN
0.71
0.10
0.40
0.20
MAX
NOM
0.81
NOTE
SYMBOL
Bottom View
8 SOLDER BALLS
A
0.91
0.20
0.50
0.30
A1
A2
b
0.15
0.45
0.25
2
D
1.50 BSC
2.00 BSC
0.50 BSC
0.25 REF
1.00 BSC
0.25 REF
1. This drawing is for general information only.
2. Dimension ‘b’ is measured at maximum solder ball diameter
E
e
e1
d
d1
6/24/03
TITLE
REV.
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
PO8U3-1
A
R
Small Die Ball Grid Array Package (dBGA2)
23
5185D–SEEPR–1/08
11. Revision History
Doc. Rev.
Date
Comments
5185D
5185C
5185B
1/2008
Removed ‘preliminary’ status
Updated to new template
8/2007
3/2007
Added Package Marking tables
Implemented revision history
24
AT34C02C
5185D–SEEPR–1/08
Headquarters
International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Atmel Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Atmel Europe
Le Krebs
Atmel Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
8, Rue Jean-Pierre Timbaud
BP 309
78054 Saint-Quentin-en-
Yvelines Cedex
France
Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Product Contact
Web Site
Technical Support
Sales Contact
www.atmel.com
s_eeprom@atmel.com
www.atmel.com/contacts
Literature Requests
www.atmel.com/literature
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI-
TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY
WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
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and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided
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as components in applications intended to support or sustain life.
©2008 Atmel Corporation. All rights reserved. Atmel®, logo and combinations thereof, and others, are registered trademarks or trademarks
of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
5185D–SEEPR–1/08
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