AOK20B135D1 [AOS]
Insulated Gate Bipolar Transistor;
| 型号： | AOK20B135D1 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总8页 (文件大小：723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOK20B135D1
1350V, 20A Alpha IGBT TM with Diode
General Description
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• Best in Class VCE(SAT) enables high efficiencies
• Low turn-off switching loss due to fast turn-off time
• Very smooth turn-off current waveforms reduce EMI
• Better thermal management
VCE
1350V
20A
IC (TC=100°C)
VCE(sat) (TC=25°C)
1.57V
• High surge current capability
• Minimal gate spike due to high input capacitance
Applications
• Induction Cooking
• Rice Cookers
• Microwave Ovens
• Other soft switching applications
Top View
TO-247
C
G
E
E
C
AOK20B135D1
G
Orderable Part Number
Package Type
Form
Tube
Minimum Order Quantity
AOK20B135D1
TO247
240
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOK20B135D1
Units
Collector-Emitter Voltage
V CE
1350
V
Gate-Emitter Voltage
Transient Voltage (tp≤1µs,D＜0.025)
±20
±30
40
V
A
V GE
I C
TC=25°C
Continuous Collector
Current
TC=100°C
20
80
Pulsed Collector Current, Limited by TJmax
I Cpulse
I LM
A
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
80
TC=25°C
40
Continuous Diode
Forward Current
I F
A
A
TC=100°C
20
Diode Pulsed Current, Limited by TJmax
TC=25°C
I Fpulse
P D
T J , T STG
T L
80
340
170
-55 to 175
W
°C
TC=100°C
Power Dissipation
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Parameter
Symbol
AOK20B135D1
Units
°C/W
°C/W
°C/W
R θ
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
40
JA
R θ
0.44
1.20
JC
R θ
JC
Rev.1.0: April 2014
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Page 1 of 8
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BV CES
V CE(sat)
IC=1mA, VGE=0V, TJ=25°C
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
1350
-
1.57
1.86
2
-
1.8
-
V
V
TJ=25°C
-
VGE=15V, IC=20A
TJ=125°C
TJ=175°C
TJ=25°C
-
-
-
-
1.46
1.51
1.52
5.3
-
1.8
V F
VGE=0V, IC=20A
Diode Forward Voltage
V
V
TJ=125°C
TJ=175°C
-
-
-
V GE(th)
I CES
VCE=5V, IC=1mA
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
4.7
5.9
10
TJ=25°C
TJ=125°C
TJ=175°C
-
-
-
-
-
VCE=1350V, VGE=0V
-
800
8000
±100
-
µA
-
I GES
g FS
VCE=0V, VGE=±20V
VCE=20V, IC=20A
Gate-Emitter leakage current
Forward Transconductance
-
nA
S
21
DYNAMIC PARAMETERS
C ies
C oes
C res
Q g
Input Capacitance
-
-
-
-
-
-
-
1900
107
32
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
Ω
VGE=0V, VCE=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
66
VGE=15V, VCE=1080V, IC=20A
Q ge
Q gc
R g
Gate to Emitter Charge
Gate to Collector Charge
Gate resistance
14
31.5
1.63
VGE=0V, VCE=0V, f=1MHz
SWITCHING PARAMETERS, (Load Iductive, TJ=25°C)
TJ=25°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
t D(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Energy
-
-
-
156
150
1.05
-
-
-
ns
ns
Parasitic Inductance=150nH
E off
mJ
SWITCHING PARAMETERS, (Load Iductive, TJ=175°C)
TJ=150°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
t D(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Energy
-
-
-
180
300
1.76
-
-
-
ns
ns
Parasitic Inductance=150nH
E off
mJ
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2014
www.aosmd.com
Page 2 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
200
20V
20V
17V
15V
17V
150
15V
13V
13V
100
11V
11V
9V
50
9V
VGE= 7V
VGE=7V
6
0
0
0.5
0
1
2
3
4
5
7
0
1
2
3
4
5
6
7
VCE(V)
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
Fig 1: Output Characteristic
(Tj=25°C )
100
80
60
40
20
0
100
80
60
40
20
0
VCE=20V
-40°C
25°C
175°C
25°C
175°C
-40°C
4
7
10
13
16
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGE(V)
Fig 3: Transfer Characteristic
VF (V)
Fig 4: Diode Characteristic
8
5
4
3
2
1
0
7
6
5
4
3
2
IC=40A
IC=20A
IC=10A
125
0
25
50
75
100
150
175
25
50
75
100
125
150
175
TJ (°C)
Temperature (°C)
Figure 6: VGE(TH) vs. Tj
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2014
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Page 3 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
Cies
VCE=1080V
IC=20A
Coes
6
3
Cres
0
1
0
10
20
30
Qg(nC)
Fig 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
20
VCE(V)
Fig 8: Capacitance Characteristic
25
30
35
40
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
50
40
30
20
10
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 11: Current De-rating
Rev.1.0: April 2014
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Page 4 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
100
10
10000
1000
100
10
Td(off)
Tf
Td(off)
Tf
1
1
0
10
20
30
40
0
25
50
75
100
125
150
175
Rg (Ω)
IC (A)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
10000
1000
100
10
Td(off)
Tf
1
0
50
100
TJ (°C)
150
200
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
Rev.1.0: April 2014
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Page 5 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
4
3
2
1
0
Eoff
Eoff
3
2
1
0
0
10
20
IC (A)
30
40
0
25
50
75
Rg (Ω)
Figure 16: Switching Loss vs. Rg
100
125
150
175
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
4
3
2
1
0
4
3
2
1
0
Eoff
Eoff
0
25
50
75
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
100
125
150
175
200
300
400
VCE (V)
500
600
Figure 18: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=20A,Rg=15Ω)
Rev.1.0: April 2014
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Page 6 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
3
2.5
2
1.5
1
0.5
0
40A
VCE=1350V
20A
5A
VCE=1080V
IF=1A
0
50
100
150
200
0
25
50
75
100
125
150
175
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.44°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
1E-06
1E-05
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.2°C/W
0.1
PD
0.01
Single Pulse
0.0001
Ton
T
0.001
1E-06
1E-05
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2014
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Page 7 of 8
Rev.1.0: April 2014
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Page 8 of 8
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