AOK20B135E1 [AOS]
Insulated Gate Bipolar Transistor;
| 型号： | AOK20B135E1 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总8页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOK20B135E1
Alpha IGBT TM with Diode
1350V, 20A
General Description
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• Best in Class VCE(SAT) enables high efficiencies
• Low turn-off switching loss due to fast turn-off time
• Very smooth turn-off current waveforms reduce EMI
• Better thermal management
VCE
1350V
20A
IC (TC=100°C)
VCE(sat) (TC=25°C)
1.8V
• High surge current capability
• Minimal gate spike due to high input capacitance
Applications
• Induction Cooking
• Rice Cookers
• Microwave Ovens
• Other soft switching applications
Top View
TO-247
C
G
E
E
C
AOK20B135E1
G
Orderable Part Number
Package Type
Form
Tube
Minimum Order Quantity
AOK20B135E1
TO247
240
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOK20B135E1
Units
V CE
Collector-Emitter Voltage
1350
V
V GE
Gate-Emitter Voltage
±30
40
V
A
TC=25°C
Continuous Collector
Current
I C
TC=100°C
20
80
I Cpulse
I CSM
I LM
Pulsed Collector Current, Limited by TJmax
Non repetitive peak collector currentA
A
A
A
200
80
Turn off SOA, VCE ≤ 600V, Limited by TJmax
TC=25°C
40
Continuous Diode
Forward Current
I F
A
A
TC=100°C
20
Diode Pulsed Current, Limited by TJmax
TC=25°C
I Fpulse
P D
80
250
125
-55 to 175
W
°C
Power Dissipation
TC=100°C
T J , T STG
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T L
300
°C
Thermal Characteristics
Parameter
Symbol
R θ JA
AOK20B135E1
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
40
R θ JC
0.6
R θ JC
1.6
°C/W
Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs
Rev.1.0: March 2015
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Page 1 of 8
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
V CE(sat)
IC=1mA, VGE=0V, TJ=25°C
1350
-
1.8
2.2
2.5
1.6
1.68
1.7
5.15
-
-
2.3
-
V
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
TJ=25°C
-
VGE=15V, IC=20A
TJ=125°C
TJ=175°C
TJ=25°C
-
-
-
-
2
V F
VGE=0V, IC=20A
VCE=5V, IC=1mA
TJ=125°C
TJ=175°C
Diode Forward Voltage
V
V
-
-
-
V GE(th)
I CES
4.5
5.8
10
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
TJ=25°C
-
-
-
-
-
VCE=1350V, VGE=0V TJ=125°C
TJ=175°C
-
500
5000
±100
-
µA
-
I GES
g FS
VCE=0V, VGE=±30V
VCE=20V, IC=20A
-
Gate-Emitter leakage current
nA
S
Forward Transconductance
21
DYNAMIC PARAMETERS
C ies
C oes
C res
Q g
Input Capacitance
-
-
-
-
-
-
-
1455
86
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
Ω
V
V
GE=0V, VCE=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
27
58
GE=15V, VCE=1080V, IC=20A
Q ge
Q gc
R g
Gate to Emitter Charge
Gate to Collector Charge
Gate resistance
13
28
VGE=0V, VCE=0V, f=1MHz
2.1
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
TJ=25°C
t D(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Energy
-
-
-
134
112
0.8
-
-
-
ns
ns
V
GE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
E off
mJ
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
TJ=175°C
t D(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Energy
-
-
-
157
154
1.26
-
-
-
ns
ns
V
GE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
E off
mJ
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2015
www.aosmd.com
Page 2 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
200
150
100
50
120
90
60
30
0
20V
17V
15V
20V
17V
15V
13V
11V
13V
11V
9V
VGE=7V
9V
VGE= 7V
5
0
0
0.5
0
1
2
3
4
5
6
7
0
1
2
3
4
6
7
VCE(V)
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
Fig 1: Output Characteristic
(Tj=25°C )
80
60
40
20
0
100
80
60
40
20
0
VCE=20V
-40°C
25°C
175°C
175°C
25°C
-40°C
10
4
7
13
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGE(V)
VF (V)
Fig 3: Transfer Characteristic
Fig 4: Diode Characteristic
7
6
5
4
3
2
5
4
3
2
1
0
IC=40A
IC=20A
IC=10A
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Temperature (°C)
TJ (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Figure 6: VGE(TH) vs. Tj
Rev.1.0: March 2015
www.aosmd.com
Page 3 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
Cies
VCE=1080V
IC=20A
1000
100
10
Coes
6
3
Cres
0
1
0
10
20
30
Qg(nC)
Fig 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
20
VCE(V)
Fig 8: Capacitance Characteristic
25
30
35
40
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 11: Current De-rating
Rev.1.0: March 2015
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Page 4 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
100
10
10000
1000
100
10
Td(off)
Tf
Td(off)
Tf
1
1
0
10
20
30
40
0
25
50
75
100
125
150
175
Rg (Ω)
IC (A)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
10000
1000
100
10
Td(off)
Tf
1
0
25
50
75
100 125 150 175 200
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
Rev.1.0: March 2015
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Page 5 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
4
3
2
1
0
Eoff
Eoff
2
1
0
0
10
20
IC (A)
30
40
0
25
50
75
Rg (Ω)
Figure 16: Switching Loss vs. Rg
100
125
150
175
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
4
3
2
1
0
4
3
2
1
0
Eoff
Eoff
0
25
50
75
100 125 150 175 200
TJ (°C)
100
200
300
400
500
600
700
VCE (V)
Figure 17: Switching Loss vs. Tj
Figure 18: Switching Loss vs. VCE
(VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
(Tj=175°C,VGE=15V,IC=20A,Rg=15Ω)
Rev.1.0: March 2015
www.aosmd.com
Page 6 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-02
1.E-03
3
40A
2.4
1.E-04
20A
5A
VCE=1350V
1.8
1.E-05
1.2
1.E-06
VCE=1080V
0.6
0
1.E-07
1.E-08
IF=1A
0
50
100
150
200
0
25
50
75
100
125
150
175
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Ton
T
Single Pulse
0.0001
0.001
1E-06
1E-05
0.001
Pulse Width (s)
0.01
0.1
1
Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.6°C/W
1
0.1
PD
0.01
0.001
Single Pulse
0.0001
Ton
T
1E-06
1E-05
0.001
0.01
0.1
1
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: March 2015
www.aosmd.com
Page 7 of 8
Rev.1.0: March 2015
www.aosmd.com
Page 8 of 8
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