AOK20N60 [FREESCALE]
600V,20A N-Channel MOSFET; 600V ， 20A N沟道MOSFET
| 型号： | AOK20N60 |
| 厂家： | 
Freescale |
| 描述： | 600V,20A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：495K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOK20N60
600V,20A N-Channel MOSFET
General Description
The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliverhigh
applications.By providing low R
levels of performance and robustness in popular AC-DC
DS(on), Ciss and Crss along
with guaranteed avalanche capability this parts canbe adopted quickly into new and existing offline powersupply
designs.
Features
VDS
700V@150℃
20A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.37Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOK20N60
Units
Drain-Source Voltage
Gate-Source Voltage
600
±30
20
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
12
A
Pulsed Drain Current C
IDM
80
6.5
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
630
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
1260
5
mJ
V/ns
W
W/ oC
417
PD
Power Dissipation B
Derate above 25oC
3.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
°C
Parameter
Symbol
RθJA
AOK20N60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
40
0.5
0.3
RθCS
Maximum Junction-to-Case
RθJC
AOK20N60
600V,20A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
0.8
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=10A
VDS=40V, ID=10A
IS=1A,VGS=0V
3.2
3.8
0.29
25
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.37
Ω
S
VSD
0.69
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
20
80
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2448 3061 3680
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
190
13
273
22.8
1.4
360
35
VGS=0V, VDS=0V, f=1MHz
0.7
2.1
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
48
14
12
61
18
74
22
36
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=20A
Gate Source Charge
Gate Drain Charge
24
Turn-On DelayTime
57
VGS=10V, VDS=300V, ID=20A,
Turn-On Rise Time
125
128
88
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=20A,dI/dt=100A/µs,VDS=100V
IF=20A,dI/dt=100A/µs,VDS=100V
384
8
480
10.5
580
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AOK20N60
600V,20A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
40
30
20
10
0
VDS=40V
-55°C
10V
6.5V
125°C
6V
VGS=5.5V
25°C
0.1
0
5
10
15
VDS (Volts)
20
25
30
0
2
4
6
8
10
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
3
2.5
2
VGS=10V
ID=10A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
10
20
30
ID (A)
40
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
100
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
150
200
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
AOK20N60
600V,20A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
Ciss
VDS=480V
ID=20A
Coss
6
Crss
3
0
10
0
20
40
60
80
100
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
25
10µs
RDS(ON)
limited
20
15
10
5
10
1
100µs
1ms
DC
10ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
0
0
25
50
75
100
125
150
1
10
100
1000
TCASE (°C)
VDS (Volts)
Figure 9: Current De-rating (Note B)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOK20N60 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=0.3°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.0001
0.001
0.000001
0.00001
0.001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK20N60 (Note F)
0.01
0.1
1
10
AOK20N60
600V,20A N-Channel MOSFET
Gate
DUT
C
avveefformm
V
g
QQg
10V
+
VDC
+
Q
Qgd
VDC
-
V
Igg
Chargge
R
RL
Vds
VVds
9
+
Vddd
DDUT
VVgs
VDC
Rg
-
1
VVgs
VVgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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