AO4449 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4449 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4449
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4449 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4449 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = -30V
ID = -7 A (VGS = -10V)
R
DS(ON) < 34mΩ (VGS = -10V)
DS(ON) < 54mΩ (VGS = -4.5V)
R
D
S
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current F
±20
V
A
TA=25°C
TA=70°C
-7
-4.6
ID
Pulsed Drain Current B
IDM
-40
TA=25°C
TA=70°C
3.1
PD
W
Power Dissipation A
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
60
75
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1
-2
V
GS=-10V, VDS=-5V
GS=-10V, ID=-7A
-40
A
V
27
38
34
54
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-5A
43
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-7A
IS=-1A,VGS=0V
15
S
V
A
-0.77
-1
Maximum Body-Diode Continuous Current
-3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
980
150
115
2.2
1225
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
3.3
24
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
18.7
9.6
3.2
4.8
7.7
6
nC
nC
nC
nC
ns
VGS=-10V, VDS=-15V, ID=-7A
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=2.2Ω,
ns
R
GEN=3Ω
20
7
ns
ns
trr
IF=-7A, dI/dt=100A/µs
IF=-7A, dI/dt=100A/µs
21
13
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev0: Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
40
35
30
25
20
15
10
5
-10V
VDS=-5V
-4.5V
-4V
-6V
-3.5V
125°C
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
60
2.00
1.80
1.60
1.40
1.20
1.00
0.80
50
40
30
20
10
VGS=-4.5V
VGS=-4.5V
ID=-5A
VGS=-10V
ID=-7A
VGS=-10V
-50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
70
60
50
40
30
20
10
ID=-7A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
1250
1000
750
500
250
0
VDS=-15V
ID=-7A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
-Qg (nC)
16
20
0
5
10
15
-VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
90
80
70
60
50
40
30
20
10
0
10µs
0.1ms
TJ(Max)=150°C
TA=25°C
1ms
RDS(ON)
limited
0.1s
DC
10s
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
RθJA=40°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明