首页 |元器件品牌

AO3401_11 [AOS]

30V P-Channel MOSFET; 30V P沟道MOSFET
AO3401_11
型号： AO3401_11
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

30V P-Channel MOSFET
30V P沟道MOSFET
文件： 总5页 (文件大小：503K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AO3401  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-30V  
The AO3401 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 2.5V. This device is suitable for use as  
a load switch or in PWM applications.  
ID (at VGS=-10V)  
RDS(ON) (at VGS=-10V)  
RDS(ON) (at VGS =-4.5V)  
RDS(ON) (at VGS=-2.5V)  
-4.0A  
< 50mΩ  
< 60mΩ  
< 85mΩ  
SOT23  
Top View  
Bottom View  
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
-4  
Continuous Drain  
Current  
ID  
A
-3.2  
Pulsed Drain Current C  
IDM  
PD  
-27  
TA=25°C  
TA=70°C  
1.4  
W
°C  
Power Dissipation B  
0.9  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
≤ 10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
Rev 6: Feb. 2011  
www.aosmd.com  
Page 1 of 5  
AO3401  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=-250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
-30  
V
VDS=-30V, VGS=0V  
-1  
µA  
-5  
IDSS  
Zero Gate Voltage Drain Current  
TJ=55°C  
VDS=0V, VGS= ±12V  
VDS=VGS ID=-250µA  
VGS=-10V, VDS=5V  
VGS=-10V, ID=-4.0A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
-1.3  
nA  
V
VGS(th)  
ID(ON)  
-0.5  
-27  
-0.9  
A
41  
62  
50  
75  
60  
85  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=-4.5V, ID=-3.7A  
47  
mΩ  
mΩ  
S
VGS=-2.5V, ID=-2A  
60  
VDS=-5V, ID=-4.0A  
IS=1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
17  
-0.7  
-1  
-2  
V
Maximum Body-Diode Continuous Current  
Pulsed Body-Diode CurrentB  
A
ISM  
-27  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
645  
80  
pF  
pF  
pF  
Ω
VGS=0V, VDS=-15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
55  
VGS=0V, VDS=0V, f=1MHz  
4
7.8  
12  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
14  
7
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
VGS=-10V, VDS=-15V, ID=-4.0A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
1.5  
2.5  
6.5  
3.5  
41  
9
VGS=-10V, VDS=-15V,  
ns  
RL=3.75Ω, RGEN=3Ω  
tD(off)  
tf  
ns  
ns  
trr  
IF=-4.0A, dI/dt=100A/µs  
IF=-4.0A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
11  
ns  
Qrr  
nC  
3.5  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 6: Feb. 2011  
www.aosmd.com  
Page 2 of 5  
AO3401  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
25  
20  
15  
10  
5
20  
15  
10  
5
10V  
VDS=-5V  
4.5V  
-2.5V  
125°C  
25°C  
VGS=-2.0V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
-VGS(Volts)  
Figure 2: Transfer Characteristics (Note E)  
-VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
100  
80  
1.8  
1.6  
1.4  
1.2  
1
VGS=-10V  
ID=-4A  
VGS=-2.5V  
VGS=-4.5V  
VGS=-4.5V  
60  
I =-3.7A
D
VGS=-2.5V  
ID=-2A  
40  
VGS=-10V  
20  
0.8  
0
2
4
6
8
10  
0
25  
50  
75  
100  
125  
150  
175  
-ID (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
150  
130  
110  
90  
1.0E+01  
ID=-4A  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
125°C  
70  
25°C  
50  
25°C  
30  
0.0  
0.2  
0.4  
-VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
-VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Rev 6: Feb. 2011  
www.aosmd.com  
Page 3 of 5  
AO3401  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
1000  
VDS=-15V  
ID=-4A  
8
800  
600  
400  
200  
0
Ciss  
6
4
Coss  
2
Crss  
0
0
5
10  
15  
0
5
10  
-VDS (Volts)  
15  
20  
25  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
10000  
1000  
100  
10  
100.0  
10.0  
1.0  
TA=25°C  
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10ms  
0.1  
TJ(Max)=150°C  
TA=25°C  
10s  
DC  
1
0.0  
0.00001  
0.001  
0.1  
10  
1000  
0.01  
0.1  
1
10  
100  
-VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note F)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note F)  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=125°C/W  
1
0.1  
PD  
0.01  
0.001  
Single Pulse  
0.001  
Ton  
T
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
Rev 6: Feb. 2011  
www.aosmd.com  
Page 4 of 5  
AO3401  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
-
-10V  
-
VDCC  
Qgs  
Qgd  
+
Vds  
VDCC  
+
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
toff  
ton  
t
td(off)  
td(on)  
t
r
f
Vgs  
-
90%  
10%  
DUT  
Vdd  
Vgs  
VDC  
+
Rg  
Vgs  
Vds  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
EAR= 1/2 LIA2R  
L
Vds  
Id  
Vgs  
Vds  
-
BVDSS  
Vgs  
Vdd  
VDC  
+
Id  
Rg  
I AR  
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
-Isd  
-IF  
Isd  
Vgs  
dI/dt  
-IRM  
+
Vdd  
VDC  
Vdd  
-
-Vds  
Rev 6: Feb. 2011  
www.aosmd.com  
Page 5 of 5  

相关型号：

AO3402

 30V N-Channel MOSFET
AOS

AO3402

 N-Channel 20-V (D-S) MOSFET Low thermal impedance
FREESCALE

AO3402

 VDS (V) = 30V ID= 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)
TYSEMI

AO3402/A2SSH

 N-Channel Enhancement Mode Field Effect Transistor
AOS

AO3402L

 N-Channel Enhancement Mode Field Effect Transistor
ETC

AO3403

 P-Channel Enhancement Mode Field Effect Transistor
AOS

AO3403

 P-Channel 20-V (D-S) MOSFET High performance trench technology
FREESCALE

AO3403L

 P-Channel Enhancement Mode Field Effect Transistor
AOS

AO3403_11

 30V P-Channel MOSFET
AOS

AO3404

 N-Channel Enhancement Mode Field Effect Transistor
AOS

AO3404A

 N-Channel Enhancement Mode Field Effect Transistor
AOS

AO3404A

 N-Channel Enhancement Mode Field Effect Transistor
FREESCALE
©2020 ICPDF网 联系我们和版权申明