AO3401A [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO3401A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3401A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3401A uses advanced trench technology to provide
excellent RDS(ON) , low gate charge and operation gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or other general applications. Standard product
AO3401A is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = -30V
ID = -4.3A
(VGS = -10V)
R
DS(ON) < 46mΩ (VGS = -10V)
DS(ON) < 55mΩ (VGS = -4.5V)
R
RDS(ON) < 80mW (VGS = -2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A,F
±12
-4.3
V
A
TA=25°C
TA=70°C
ID
-3.8
Pulsed Drain Current B
IDM
-25
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
65
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
85
125
80
Maximum Junction-to-Lead C
RθJL
43
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3401A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-4.3A
±100
-1.3
nA
V
VGS(th)
ID(ON)
-0.6
-25
-1
A
36
52
44
63
55
80
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-4.5V, ID=-3.5A
VGS=-2.5V, ID=-2.5A
VDS=-5V, ID=-4.3A
IS=-1A,VGS=0V
44
62
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
S
V
A
-0.75
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
933
108
81
1200
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6
9
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.3
1.5
3.7
5.2
6.8
42
12.2
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-4.3A
VGS=-10V, VDS=-15V, RL=3.5Ω,
R
GEN=6Ω
tD(off)
tf
15
trr
IF=-4.3A, dI/dt=100A/µs
IF=-4.3A, dI/dt=100A/µs
21
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
14.3
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤ 10s thermal resistance rating.
Rev0: Apr.2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3401A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
25
20
15
10
5
-4.5V
VDS=-5V
-10V
-3V
-2.5V
6
4
125°C
25°C
2
VGS=-2V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
100
80
60
40
20
1.6
1.4
1.2
1
ID=-3.5A, VGS=-4.5V
ID=-4.3A, VGS=-10V
VGS=-2.5V
VGS=-2.5V
ID=-2.5A
VGS=-4.5V
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
70
60
50
40
30
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-4.3A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3401A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1600
1200
800
400
0
VDS=-15V
ID=-4.3A
Ciss
Coss
5
Crss
20
0
3
6
9
12
0
10
15
-VDS (Volts)
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
24
18
12
6
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
10s
0.1s
0.1
TJ(Max)=150°C
DC
TC=25°C
0
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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