AOK10N90 [AOS]
900V,10A N-Channel MOSFET; 900V ， 10A的N沟道MOSFET
| 型号： | AOK10N90 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 900V,10A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOK10N90
900V,10A N-Channel MOSFET
General Description
Product Summary
VDS
1000@150℃
10A
The AOK10N90 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.98Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOK10N90L
Top View
TO-247
D
G
S
S
D
G
AOK10N90
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOK10N90
Units
Drain-Source Voltage
Gate-Source Voltage
900
±30
10
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
A
7
Pulsed Drain Current C
Avalanche Current C
IDM
38
IAR
3.7
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
205
410
5
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
403
3.2
PD
Power Dissipation B
Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
°C
Parameter
Symbol
RθJA
AOK10N90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
40
0.5
RθCS
Maximum Junction-to-Case
RθJC
0.31
Rev0: Nov 2012
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Page 1 of 5
AOK10N90
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
900
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
1000
0.9
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=900V, VGS=0V
VDS=720V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=5A
VDS=40V, ID=5A
IS=1A,VGS=0V
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.82
17
0.98
Ω
S
VSD
0.7
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
10
38
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2100 2630 3160
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
130
10
190
18
250
26
1.5
3.4
5.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
45
60
13
75
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=720V, ID=10A
Gate Source Charge
Gate Drain Charge
27
Turn-On DelayTime
64
VGS=10V, VDS=450V, ID=10A,
Turn-On Rise Time
105
155
84
G
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=10A,dI/dt=100A/µs,VDS=100V
IF=10A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
460
7.0
575
9.9
700
ns
Qrr
µC
12.0
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Nov 2012
www.aosmd.com
Page 2 of 5
AOK10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
25
-55°C
VDS=40V
10V
20
6.5V
15
10
5
6V
125°C
VGS=5.5V
25°C
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
3
2.5
2
2
1.6
1.2
0.8
0.4
0
VGS=10V
ID=5A
VGS=10V
1.5
1
0.5
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
0.9
0.8
-100
-50
0
50
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
100
150
200
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
Rev0: Nov 2012
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Page 3 of 5
AOK10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
VDS=720V
ID=10A
Ciss
1000
100
10
Coss
Crss
6
3
0
1
0
15
30
45
60
75
90
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
12
10
8
RDS(ON)
limited
10µs
100µs
1ms
6
1
DC
10ms
4
0.1
0.01
2
TJ(Max)=150°C
TC=25°C
0
0
25
50
75
100
125
150
1
10
100
1000
TCASE (°C)
Figure 9: Current De-rating (Note B)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOK10N90 (Note F)
10
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
θJC=0.31°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
1E-06
1E-05
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK10N90 (Note F)
Rev0: Nov 2012
www.aosmd.com
Page 4 of 5
AOK10N90
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev0: Nov 2012
www.aosmd.com
Page 5 of 5
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