AOD606 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AOD606 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总9页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD606
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 40V
ID = 8A (VGS=10V)
RDS(ON)
The AOD606 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AOD606 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD606L is a Green Product ordering option.
AOD606 and AOD606L are electrically
identical.
p-channel
-40V
-8A (VGS = -10V)
RDS(ON)
< 33 mΩ (VGS=10V)
< 47 mΩ (VGS=4.5V)
< 50 mΩ (VGS = -10V)
< 70 mΩ (VGS = -4.5V)
TO-252-4L
D-PAK
D1/D2
D1/D2
Top View
Drain Connected to
Tab
G1
G2
S2
S1
n-channel
p-channel
S1 G1
S2 G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
±20
V
A
TC=25°C
8
8
TC=100°C
ID
8
8
-30
C
Pulsed Drain Current
IDM
IAR
EAR
30
C
Avalanche Current
8
-8
A
C
Repetitive avalanche energy L=0.1mH
20
30
mJ
TC=25°C
20
50
PD
W
B
Power Dissipation
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
10
2
25
2.5
PDSM
W
A
1.3
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
-55 to 175
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Symbol
Device Typ
Max
30
60
A
t ≤ 10s
n-ch
n-ch
n-ch
17.4
50
4
°C/W
°C/W
°C/W
RθJA
RθJC
RθJA
RθJC
A
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
B
7.5
Maximum Junction-to-Case
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
p-ch
p-ch
p-ch
16.7
40
2.5
25
50
3
°C/W
°C/W
°C/W
B
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=32V, VGS=0V
40
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
2.3
30
A
VGS=10V, ID=8A
27
39
33
52
47
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
37
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=5V, ID=8A
25
S
V
A
IS=1A, VGS=0V
0.76
1
8
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
404
95
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
37
VGS=0V, VDS=0V, f=1MHz
2.7
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.2
4.5
1.6
2.6
3.5
6
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=20V, ID=8A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=20V, RL=2.5Ω,
RGEN=3Ω
ns
tD(off)
tf
13.2
3.5
22.9
18.3
ns
ns
trr
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0: January 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
30
25
20
15
10
5
10V
5V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
V
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
50
1.8
1.6
1.4
1.2
1
VGS=10V
ID=8A
45
40
35
30
25
20
VGS=4.5V
VGS=4.5V
ID=6A
VGS=10V
0
4
8
12
16
20
0.8
I
D (A)
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
100
90
80
70
60
50
40
30
20
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=8A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
10
600
500
400
300
200
100
0
VDS=20V
ID=8A
8
6
4
2
0
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
VDS (Volts)
25
30
35
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
200
160
120
80
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
DC
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
10
8
6
4
L ⋅ ID
tA
=
BV −VDD
2
TA=25°C
0
0
0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
TCASE (°C)
Figure 13: Power De-rating (Note B)
10
8
50
TA=25°C
40
30
20
10
0
6
4
2
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
AOD606
P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-40
V
V
DS=-32V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1
-1.8
VGS=-10V, VDS=-5V
-30
A
V
GS=-10V, ID=-8A
35
62
50
70
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=-4.5V, ID=-4A
VDS=-5V, ID=-8A
IS=-1A,VGS=0V
55
gFS
VSD
IS
Forward Transconductance
16
Diode Forward Voltage
-0.75
-1
-8
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
657
143
63
pF
pF
pF
Ω
V
GS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
14.1
7
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=-10V, VDS=-20V, ID=-8A
Qgs
Qgd
tD(on)
tr
2.2
4.1
8
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-20V, RL=2.5Ω,
12.2
24
ns
R
GEN=3Ω
tD(off)
tf
ns
12.5
23.2
18.2
ns
trr
IF=-8A, dI/dt=100A/µs
IF=-8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0 : January 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD606
P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
30
25
20
15
10
5
25
20
15
10
5
-5V
-10V
-6V
-4.5V
VDS=-5V
VGS=-4V
-3.5V
125°C
-3V
25°C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
80
1.80
VGS=-10V
ID=-8A
VGS=-4.5V
70
60
50
40
30
20
1.60
1.40
1.20
1.00
0.80
VGS=-4.5V
ID=-6A
VGS=-10V
0
4
8
12
16
20
-ID (A)
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
120
100
80
1.0E+01
ID=-8A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
125°C
60
25°C
25°C
40
20
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD606
P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
10
1200
1000
800
600
400
200
0
VDS=-20V
ID=-8A
8
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
200
160
120
80
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
DC
1ms
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD606
P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
10
60
50
40
30
20
10
0
L ⋅ ID
tA =
BV −VDD
8
6
4
TA=25°C
2
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
10
8
TA=25°C
50
40
30
20
10
0
6
4
2
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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