AOD608L [AOS]
Transistor;
| 型号： | AOD608L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总9页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD608
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
The AOD608 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used in H-bridge, Inverters and other
applications. Standard product AOD608 is
Pb-free (meets ROHS & Sony 259
p-channel
-40V
-10A (VGS = -10V)
RDS(ON)
VDS (V) = 40V
ID = 10A (VGS=10V)
RDS(ON)
< 39 mΩ (VGS=10V)
< 50 mΩ (VGS=4.5V)
< 51 mΩ (VGS = -10V)
< 75 mΩ (VGS = -4.5V)
specifications). AOD608L is a Green
Product ordering option. AOD608 and
AOD608L are electrically identical.
ESD rating: 3000V (HBM)
TO-252-4L
D-PAK
D2
D1
D1/D2
Top View
G1
G2
Drain Connected
to Tab
S1
S2
n-channel
p-channel
S1 G1
S2 G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current C
±20
±20
-10
V
A
TC=25°C
10
TC=100°C
ID
10
-10
IDM
IAR
EAR
30
-30
12
-15
A
Repetitive avalanche energy L=0.3mH C
21
33
mJ
TC=25°C
20
50
PD
W
Power Dissipation B
TC=100°C
10
2
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.3
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
-55 to 175
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol Device Typ
Max
23
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
n-ch
n-ch
n-ch
19
50
4
°C/W
°C/W
°C/W
RθJA
RθJC
RθJA
RθJC
A
Steady-State
Steady-State
t ≤ 10s
60
7.5
A
A
p-ch
p-ch
p-ch
19
50
23
60
3
°C/W
°C/W
°C/W
Steady-State
Steady-State
2.5
Alpha & Omega Semiconductor, Ltd.
AOD608
N Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=32V, VGS=0V
1
5
1
3
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
mA
V
VGS(th)
ID(ON)
1
2.2
30
A
32
45
39
50
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
42
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=10A
IS=1A,VGS=0V
13
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
500
106
38
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2.6
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.4
4.1
1.6
2.6
4.8
2
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=10V, VDS=20V, ID=10A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=20V, RL=2Ω,
ns
R
GEN=3Ω
tD(off)
tf
17
ns
2.1
17.5
11.1
ns
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Aug 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD608
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
20
15
10
5
10V
5V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
V
DS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
50
40
30
20
1.8
1.6
1.4
1.2
1
VGS=10V
ID=10A
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.8
0.6
0
5
10
D (A)
15
20
-50 -25
0
25 50 75 100 125 150 175
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=10A
60
50
40
30
20
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD608
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
700
600
500
400
300
200
100
0
10
8
Ciss
VDS=30V
ID=10A
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
210
190
170
150
130
110
90
10µs
TJ(Max)=175°C
TC=25°C
1m
RDS(ON)
limited
DC
10ms
70
TJ(Max)=175°C
TC=25°C
50
30
10
0.1
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD608
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
35
30
25
20
15
10
5
25
20
15
10
5
TA=25°C
TA=150°C
L ⋅ ID
tA =
BV −VDD
0
0
0
25
50
75
100
125
150
175
0.000001
0.00001
0.0001
0.001
T
CASE (°C)
Time in avalanche, tA (s)
Figure 13: Power De-rating (Note B)
Figure 12: Single Pulse Avalanche capability
current derating
50
40
30
20
10
0
12
10
8
TJ(Max)=150°C
TA=25°C
6
4
2
0
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
17
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
T
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
0.0001
Ton
T
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
AOD608
P-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-40
V
VDS=-32V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
±150
-3
VGS(th)
ID(ON)
-1
-1.9
V
A
-30
V
GS=-10V, ID=-10A
42
59
51
75
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4A
VDS=-5V, ID=-10A
IS=-1A,VGS=0V
62
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
S
V
A
-0.75
-1
Maximum Body-Diode Continuous Current
3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1000
152
77
pF
pF
pF
Ω
V
GS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
11
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
17.4
8.8
3.3
4.5
9.7
6.3
35.5
26
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=-10V, VDS=-20V, ID=-10A
Qgs
Qgd
tD(on)
tr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-20V, RL=2Ω,
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=-10A, dI/dt=100A/µs
IF=-10A, dI/dt=100A/µs
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
15.9
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Aug 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD608
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
-5V
-4.5V
-4V
-6V
125°C
-3.5V
25°C
4
VGS=-3V
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4.5
5
5.5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
70
60
50
40
30
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-10A
VGS=-4.5V
VGS=-4.5V
ID=-4A
0.8
0.6
VGS=-10V
-50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-10A
125°C
125°C
25°C
25°C
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD608
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
1200
1000
800
600
400
200
0
Ciss
VDS=-40V
ID=-10A
8
6
4
Crss
Coss
2
0
0
5
10
15
20
25
30
35
40
0
4
8
12
16
20
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
200
160
120
80
TJ(Max)=150°C, TA=25°C
TJ(Max)=175°C
TA=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
100m
1s
40
DC
10s
0
0.0001
0.001
0.01
0.1
1
10
0.1
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD608
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
65
55
45
35
25
15
60
50
40
30
20
10
0
L⋅ ID
tA =
BV −VDD
TA=25°C
TA=150°C
5
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
14
12
10
8
TA=25°C
50
40
30
20
10
0
6
4
2
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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