AOD7S60 [FREESCALE]
600V 7A a MOS TM Power Transistor; 600V 7A的MOS TM功率晶体管
| 型号： | AOD7S60 |
| 厂家： | 
Freescale |
| 描述： | 600V 7A a MOS TM Power Transistor |
| 文件： | 总7页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
General Description
the advanced αMOSTM high voltage process that is
The AOD7S60 & AOU7S60 have been fabricated using
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Features
VDS @ Tj,max
700V
33A
IDM
RDS(ON),max
Qg,typ
0.6Ω
8.2nC
1.9µJ
Eoss @ 400V
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
600
±30
7
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
5
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
33
1.7
43
86
83
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy H
TC=25°C
EAR
EAS
mJ
W
W/ oC
PD
Power Dissipation B
Derate above 25oC
0.7
100
20
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
V/ns
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
300
°C
Parameter
Symbol
Typical
Maximum
Units
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθJA
45
55
°C/W
RθCS
RθJC
--
0.5
1.5
°C/W
°C/W
1.2
1/7
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AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
-
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
600
-
700
-
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
650
-
1
V
VDS=600V, VGS=0V
-
IDSS
µA
VDS=480V, TJ=150°C
VDS=0V, VGS=±30V
-
10
-
-
IGSS
Gate-Body leakage current
Gate Threshold Voltage
-
±100
3.9
0.6
1.64
-
nΑ
V
VGS(th)
VDS=5V,ID=250µA
2.7
3.3
0.54
1.48
0.82
-
VGS=10V, ID=3.5A, TJ=25°C
-
-
-
-
-
Ω
Ω
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.5A, TJ=150°C
IS=3.5A,VGS=0V, TJ=25°C
VSD
IS
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed CurrentC
7
A
ISM
-
33
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
-
-
372
28
-
-
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related I
Co(er)
Co(tr)
-
-
22
65
-
-
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related J
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
-
-
1.2
-
-
pF
17.5
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-
-
-
-
-
-
-
-
-
-
8.2
2.0
2.8
19
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=3.5A
VGS=10V, VDS=400V, ID=3.5A,
13
RG=25Ω
tD(off)
tf
50
15
trr
IF=3.5A,dI/dt=100A/µs,VDS=400V
IF=3.5A,dI/dt=100A/µs,VDS=400V
IF=3.5A,dI/dt=100A/µs,VDS=400V
198
18
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
ns
A
Irm
Qrr
2.4
µC
Body Diode Reverse Recovery Charge
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
K. Wave soldering only allowed at leads.
2/7
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AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
14
12
10
8
6V
10V
10V
6V
5.5V
6
5.5V
6
5V
4
4
5V
VGS=4.5V
2
VGS=4.5V
2
0
0
0
5
10
DS (Volts)
15
20
0
5
10
VDS (Volts)
Figure 1: On-Region Characteristics@25°C
15
20
V
Figure 2: On-Region Characteristics@125°C
100
10
1.5
1.2
0.9
0.6
0.3
0.0
VDS=20V
125°C
-55°C
1
VGS=10V
25°C
0.1
0.01
0
3
6
9
12
15
2
4
6
8
10
VGS(Volts)
ID (A)
Figure 3: Transfer Characteristics
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
3
2.5
2
VGS=10V
ID=3.5A
1.1
1
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
3/7
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AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
VDS=480V
ID=3.5A
25°C
6
3
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
VSD (Volts)
Qg (nC)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
10
5
4
3
2
1
0
Ciss
Coss
Eoss
Crss
1
0
0
0
100
200
300
VDS (Volts)
400
500
600
100
200
300
DS (Volts)
400
500
600
V
Figure 10: Coss stroed Energy
Figure 9: Capacitance Characteristics
100
10
800
600
400
200
0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1
0.1
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.01
0.0001
0.001
0.01
0.1
1
10
1
10
100
1000
Pulse Width (s)
VDS (Volts)
Figure 12: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 11: Maximum Forward Biased Safe
Operating Area (Note F)
4/7
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AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=1.5°C/W
1
0.1
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
100
80
60
40
20
0
8
6
4
2
0
25
50
75
CASE (°C)
Figure 14: Avalanche energy
100
125
150
175
0
25
50
75
100
125
150
T
TCASE (°C)
Figure 15: Current De-rating (Note B)
5/7
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AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
300
200
100
0
TA=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
R
θJA=55°C/W
0.1
0.01
0.001
0.0001
Single Pulse
0.1
0.001
0.01
1
10
100
1000
10000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note G)
6/7
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AOD7S60/AOU7S60
600V 7A
α
MOS TM Power Transistor
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
7/7
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