AO4613L [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4613L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4613
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
p-channel
-30V
-6.1A (VGS=10V)
The AO4613 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 40mΩ (VGS=4.5V)
< 37mΩ (VGS = -10V)
< 60mΩ (VGS = -4.5V)
applications. It is ESD protected.
Standard product AO4613 is Pb-free
(meets ROHS & Sony 259
ESD rating: 1500V (HBM)
specifications). AO4613L is a Green
Product ordering option. AO4613 and
AO4613L are electrically identical
D1
D2
S2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel Units
VDS
Drain-Source Voltage
30
-30
±20
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
7.2
TA=25°C
TA=70°C
-6.1
-5.1
-30
A
ID
6.1
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
15
1.44
20
Avalanche Current B
IAR
A
Repetitive avalanche energy 0.1mH B
EAR
11
20
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
n-ch
n-ch
n-ch
Max
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
55
92
37
62.5 °C/W
110 °C/W
50 °C/W
RθJA
RθJL
RθJA
RθJL
A
Steady-State
Steady-State
t ≤ 10s
C
Maximum Junction-to-Lead
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
p-ch
p-ch
p-ch
48
84
37
62.5 °C/W
110 °C/W
50 °C/W
Steady-State
Steady-State
C
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
AO4613
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
10
3
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
2
V
A
V
GS=10V, VDS=5V
GS=10V, ID=7.2A
20
V
20
29
24
35
40
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=4A
DS=5V, ID=7.2A
IS=1A
30
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
10
18
S
V
A
0.77
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
522
110
75
630
3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2.1
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
11
5.3
1.9
4
15
7
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=15V, ID=7.2A
Qgs
Qgd
tD(on)
tr
4.7
4.9
16.2
3.5
15.7
7.9
7
VGS=10V, VDS=15V, RL=2.1Ω,
RGEN=3Ω
10
22
7
ns
tD(off)
tf
ns
ns
trr
IF=7.2A, dI/dt=100A/µs
IF=7.2A, dI/dt=100A/µs
20
10
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. R andRθJC are equivalent terms referring to thermal
θJL
resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. Rev 0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
5V
10V
4.5V
4V
VDS=5V
3.5V
125°C
4
VGS=3V
25°C
3.5
0
0
0
0.5
1
1.5
2
2.5
3
4
4.5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
40
35
30
25
20
15
10
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS=10V
ID=7.2A
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.9
0.8
0
25
50
75
100 125 150 175
0
5
10
D (Amps)
15
20
Temperature ( °C)
I
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=7.2A
60
50
40
30
20
10
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body diode characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
f=1MHz
VGS=0V
900
800
700
600
500
400
300
200
100
0
VDS=15V
ID=7.2A
8
6
4
2
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge characteristics
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10µs
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4613
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
10
-3
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.1A
VGS(th)
ID(ON)
-1
-1.7
V
A
30
28
39
37
48
60
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
45
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-6.1A
IS=-1A,VGS=0V
12.5
-0.77
S
V
A
-1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040
179
134
5
1250
10
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
16.8
8.7
3.4
5
22
12
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=-10V, VDS=-15V, ID=-6.1A
Qgs
Qgd
tD(on)
tr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9
12
11
30
20
27
18
VGS=-10V, VDS=-15V, RL=2.5Ω,
5.7
22.7
10.2
21.7
13.6
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=-6.1A, dI/dt=100A/µs
IF=-6.1A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of R is measured with the device mounted on 1inFR-4 board with 2oz. Copper, in a still air environment with T =25°C. The value in
θJA A
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
is the sum of the thermal impedence from junction to lead R and lead to ambient. R
and RθJC are equivalent terms referring to
θJA θJL
θJL
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. Rev 0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
-4.5V
-6V
-5V
-4V
-3.5V
VGS=-3V
125°C
2
25°C
-2.5V
0
0
0
1
2
3
4
5
0
1
3
4
5
6
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
90
1.60
1.40
1.20
1.00
0.80
80
70
60
50
40
30
20
VGS=-10V
ID=-6.1A
VGS=-4.5V
ID=-4
VGS=-4.5V
VGS=-10V
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-6.1A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=-15V
ID=-6.1A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
-Qg (nC)
16
20
0
5
10
15
-VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
0.1s
1ms
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
10
Single Pulse
0.01
T
0.01
0.00001
0.0001
0.001
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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