AO3422 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3422 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product AO3422 is Pb-free (meets
ROHS & Sony 259 specifications). AO3422L is a
Green Product ordering option. AO3422 and
AO3422L are electrically identical.
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
R
R
DS(ON) < 160mΩ (VGS = 4.5V)
DS(ON) < 200mΩ (VGS = 2.5V)
D
TO-236
(SOT-23)
Top View
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
55
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
VGS
±12
TA=25°C
TA=70°C
2.1
1.7
ID
A
Pulsed Drain Current B
IDM
10
TA=25°C
TA=70°C
1.25
PD
W
Power Dissipation
0.8
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
75
Max
100
150
60
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
115
48
RθJL
Alpha & Omega Semiconductor, Ltd.
AO3422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=44V, VGS=0V
55
V
1
IDSS
Zero Gate Voltage Drain Current
μA
5
TJ=55°C
IGSS
Gate-Source leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±12V
±100
2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250μA
VGS=4.5V, VDS=5V
0.6
10
1.3
A
V
GS=4.5V, ID=2.1A
125
175
157
11
160
210
200
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=2.5V, ID=1.5A
DS=5V, ID=2.1A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
IS=1A
0.78
1
1
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
214
31
300
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
12.6
1.3
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
2.6
0.6
0.8
2.3
2.4
16.5
2
3.3
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=27.5V, ID=2.1A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=27.5V, RL=12Ω,
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=2.1A, dI/dt=100A/μs
IF=2.1A, dI/dt=100A/μs
20
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
17
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0: Oct 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
6
4
2
0
10
8
10V
3.5V
VDS=5V
5V
6
2.5V
4
125°C
VGS=2V
2
25°C
2.25
0
0
1
2
3
DS (Volts)
4
5
1
1.25
1.5
1.75
2
2.5
V
VGS(Volts)
Fig 1: On-Region characteristics
Figure 2: Transfer Characteristics
200
180
160
140
120
100
2
1.8
1.6
1.4
1.2
1
VGS=4.5
VGS=2.5V
VGS=2.5V
VGS=4.5V
0.8
0
1
2
3
4
5
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
360
310
260
210
160
110
60
125°C
ID=2.3A
125°C
25°C
25°C
10
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
360
320
280
240
200
160
120
80
5
4
3
2
1
0
VDS=27.5V
ID=2.1A
Ciss
Coss
Crss
40
0
0
5
10
15
DS (Volts)
20
25
30
0
1
2
3
V
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
15
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
RDS(ON)
limited
10
5
100μs
0.1s
10ms
1ms
1s
10s
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
1
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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