APM2506NUC-TUL [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM2506NUC-TUL |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2506NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
z
25V/60A,
Pin 3
D
RDS(ON)= 5mΩ (typ.) @ VGS= 10V
RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V
Super High Dense Cell Design
Avalanche Rated
3
z
z
z
Pin 1
G
1
Reliable and Rugged
2
S
Pin 2
Applications
z
Power Management in Desktop Computer or
DC/DC Converters
Ordering and Marking Information
Package Code
APM2506N
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
Lead Free Code
Handing Code
Temp. Range
Package Code
L : Lead Free Device
Blank : Original Device
APM2506N U:
XXXXX – Date Code
APM2506N
XXXXX
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
www.anpec.com.tw
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
1
APM2506NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C)
±25
±20
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
V
°C
°C
150
Maximum Junction Temperature
Storage Temperature Range
TSTG
-55 to 150
Mounted on Large Heat Sink
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
150
80
60*
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
ID
40
50
PD
Maximum Power Dissipation
W
20
2.5
RθJC
Thermal Resistance-Junction to Case
°C/W
Mounted on PCB of 1in2 pad area
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
150
80
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
17
10
ID
2.5
PD
Maximum Power Dissipation
W
1
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
Mounted on PCB of Minimum Footprint
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
150
80
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
13
ID
7
1.5
0.5
°C/W
°C/W
°C/W
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
75
Notes：
* Current limited by bond wire
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
2
APM2506NU
Electrical Characteristics (TA=25°C)
APM2506NU
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
ID=45A, VDD=15V
100
mJ
Static
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
25
V
µA
V
VGS=0V, IDS=250µA
VDS=20V, VGS=0V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
1
1
1.5
2
±100
6
nA
5
7
a
RDS(ON) Drain-Source On-state Resistance
mΩ
10
Diode
a
VSD
IS
Diode Forward Voltage
ISD=20A , VGS=0V
0.7
1.3
40
V
A
Diode continuous forward current TA=25°C
Dynamicb
Ciss
Input Capacitance
VGS=0V
3000
670
360
13
pF
pF
pF
ns
ns
ns
ns
VDS=15V
Coss
Crss
td(ON)
Tr
Output Capacitance
Frequency=1.0MHz
Reverse Transfer Capacitance
Turn-on Delay Time
20
15
66
28
VDD=15V, RL=15Ω
IDS=1A, VGEN=10V,
RG=6Ω
Turn-on Rise Time
9
td(OFF) Turn-off Delay Time
43
Tf
Turn-off Fall Time
14
Gate Chargeb
Qg
Total Gate Charge
32
6.6
42
nC
nC
nC
VDS=15V, VGS=4.5V,
IDS=20A
Qgs
Gate-Source Charge
Gate-Drain Charge
Qgd
12.4
Notes：
a : Pulse test ; pulse width≤300µs, duty cycle≤2%
b : Guaranteed by design, not subject to production testing
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
3
APM2506NU
Typical Characteristics
Power Dissipation
Drain Current
60
70
60
50
40
30
20
10
0
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300
100
1
Duty = 0.5
0.2
0.1
100µs
300µs
0.1
10
1
0.05
1ms
0.02
10ms
DC
0.01
Single Pulse
0.01
Mounted on 1in2 pad
RθJA :50oC/W
TC=25OC
0.1
1E-3
0.1
1
10
70
1E-4 1E-3 0.01
0.1
1
10
100
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
4
APM2506NU
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
100
12
10
8
VGS=3.5,4,5,6,7,8,9,10V
80
VGS=4.5V
VGS=10V
60
3V
6
40
4
2.5V
20
2
2V
0
0
0
20
40
60
80
100
0
2
4
6
8
10
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
Transfer Characteristics
Gate Threshold Voltage
100
80
60
40
20
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS =250µA
Tj=125oC
Tj=-55oC
Tj=25oC
0
1
2
3
4
5
-50 -25
0
25 50 75 100 125 150
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
5
APM2506NU
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
100
10
1
VGS = 10V
IDS = 40A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Tj=150oC
Tj=25oC
RON@Tj=25oC: 5mΩ
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-Drain Voltage (V)
Tj - Junction Temperature (°C)
Capacitance
Gate Charge
6000
5000
4000
3000
2000
1000
0
10
Frequency=1MHz
VDS=10 V
ID = 30 A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
10
0
10
20
30
40
50
60
70
0
5
15
20
25
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
6
APM2506NU
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
7
APM2506NU
Package information
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
A1
Millimeters
Inches
Dim
Min.
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
6.73
5.18
10.41
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
A
A1
b
2.18
0.89
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
0.508
5.207
0.46
b2
C
C1
D
0.46
5.334
6.35
E
e1
H
3.96
9.398
0.51
L
L1
L2
0.64
1.02
0.040
0.080
0.89
2.032
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
8
APM2506NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate (183°C to Peak)
Preheat temperature (125 ± 25°C)
3°C/ second max.
10°C /second max.
120 seconds max.
60~150 seconds
10~20 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
60 seconds
220 + 5/-0°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C
Peak temperature range
Ramp-down rate
6°C /second max.
10°C /second max.
Time 25°C to peak temperature
6 minutes max.
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
9
APM2506NU
Reliability test program
Test item
Method
Description
245°C,5 SEC
SOLDERABILITY
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
HOLT
PCT
TST
1000 Hrs Bias @125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimension
t
D
P
Po
E
F
P1
Bo
W
Ao
D1
T2
Ko
J
C
A
B
T1
A
B
C
J
T1
T2
2.5±0.5
Ao
W
P
E
Application
TO-252
16.4+0.3
-0.2
16+0.3
16-0.1
330±3
100±2
13±0.5
2±0.5
8±0.1
1.75±0.1
F
D
D1
Po
P1
Bo
Ko
t
7.5±0.1
1.5±0.1 1.5±0.25 4.0±0.1
2.0±0.1
6.8±0.1 10.4±0.1 2.5±0.1 0.3±0.05
(mm)
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Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
10
APM2506NU
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO-252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
www.anpec.com.tw
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
11
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