APM2509NUB [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM2509NUB |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2509NUB
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
25V/50A ,
RDS(ON)=7.5mW(typ.) @ VGS=10V
RDS(ON)=13mW(typ.) @ VGS=4.5V
1
2
3
·
·
Super High Dense Cell Design
Avalanche Rated
·
·
Reliable and Rugged
Lead Free Available (RoHS Compliant)
G
D
S
Top View of TO-251
D
Applications
·
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
UB : TO-251
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
APM2509N
Lead Free Code
°
Handling Code
Temp. Range
Package Code
PB : Plastic Bag
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2509N UB :
APM2509N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
1
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Absolute Maximum Ratings
Symbol
Common Ratings (TA=25°C Unless Otherwise Noted)
Parameter
Rating
Unit
25
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
30
TC=25°C
Mounted on Large Heat Sink
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
100
65
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
50*
38
ID
50
PD
Maximum Power Dissipation
W
20
2.5
RqJC
Thermal Resistance-Junction to Case
°C/W
Mounted on PCB of Minimum Footprint
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
65
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
9.5
ID
4
1.25
PD
Maximum Power Dissipation
W
0.25
100
RqJA
Thermal Resistance-Junction to Ambient
°C/W
Note:
* Current limited by bond wire.
Copyright ã ANPEC Electronics Corp.
2
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2509NUB
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed ID=15A, L=0.5mH
50
mJ
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
25
V
VGS=0V, IDS=250mA
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
mA
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.3
1.8
2.5
±100
9
V
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
VGS=4.5V, IDS=15A
nA
7.5
13
a
RDS(ON) Drain-Source On-state Resistance
mW
18
Diode Characteristics
a
VSD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=10A, VGS=0V
0.9
17
6
1.1
V
b
trr
ns
nC
ISD=10A, dISD/dt =100A/ms
b
Qrr
Dynamic Characteristics b
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.8
1560
345
245
17
W
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
18
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
41
16
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
17.5
5
26
VDS=15V, VGS=4.5V,
IDS=30A
nC
11
Notes:
a : Pulse test ; pulse width£300ms, duty cycle£2%.
b : Guaranteed by design, not subject to production testing.
Copyright ã ANPEC Electronics Corp.
3
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Typical Characteristics
Drain Current
Power Dissipation
60
50
40
30
20
10
0
60
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300
100
2
1
Duty = 0.5
10ms
0.2
100ms
0.1
0.05
0.1
0.01
1E-3
10
1
1s
0.02
0.01
DC
Single Pulse
Mounted on minimum pad
qJA :100oC/W
Tc=25oC
R
0.1
0.1
1
10
70
1E-4 1E-3 0.01 0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
4
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
100
22
20
18
16
14
12
10
8
VGS=4,5,6,7,8,9,10V
90
80
VGS=4.5V
70
60
50
40
30
20
10
0
3.5V
3V
VGS=10V
6
2.5V
1.6
4
2
0.0
0.4
0.8
1.2
2.0
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
18
16
14
12
10
8
IDS =250mA
ID= 30A
6
4
-50 -25
0
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
5
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
40
10
VGS = 10V
IDS = 30A
1.6
1.4
1.2
1.0
0.8
0.6
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 7.5mW
0.4
-50 -25
0.1
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
10
Frequency=1MHz
VDS=15V
ID = 30A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
6
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Avalanche Test Circuit and Waveforms
VDS
VDSX(SUS)
L
tp
VDS
DUT
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
V GS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
Copyright ã ANPEC Electronics Corp.
7
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Packaging Information
TO-251
E
A
b2
C1
E1
E1
C
b
A1
e1
Millimeters
Inches
Dim
Min.
2.20
1.02
0.50
5.20
0.40
0.40
5.40
5.30
6.35
4.40
4.50
12.90
Max.
2.40
1.27
0.88
5.46
0.60
0.60
6.20
--
Min.
Max.
0.094
0.050
0.035
0.215
0.024
0.024
0.244
--
A
A1
b
0.087
0.040
0.020
0.205
0.016
0.016
0.213
0.209
0.250
0.173
0.177
0.508
b2
C
C1
D
D1
E
6.70
5.40
4.70
15.25
0.264
0.213
0.185
0.600
E1
e1
H
Copyright ã ANPEC Electronics Corp.
8
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
Preheat
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
183°C
60-150 seconds
217°C
60-150 seconds
- Time (tL)
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ã ANPEC Electronics Corp.
9
www.anpec.com.tw
Rev. B.1 - Jun., 2006
APM2509NUB
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
³ 2.5 mm
240 +0/-5°C
225 +0/-5°C
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
1.6 mm – 2.5 mm
³ 2.5 mm
260 +0°C*
260 +0°C*
250 +0°C*
260 +0°C*
250 +0°C*
245 +0°C*
260 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
10
www.anpec.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明