APM2509NUC-TR [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET型号: | APM2509NUC-TR |
厂家: | ANPEC ELECTRONICS COROPRATION |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总11页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APM2509NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
25V/50A ,
RDS(ON)=7.5mW(typ.) @ VGS=10V
RDS(ON)=13mW(typ.) @ VGS=4.5V
·
·
Super High Dense Cell Design
Avalanche Rated
TopViewof TO-252
·
·
Reliable and Rugged
D
Lead Free Available (RoHS Compliant)
Applications
G
·
Power Management in Desktop Computer or
DC/DC Converters
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
APM2509N
U : TO-252
Lead Free Code
Handling Code
Operating Junction Temp. Range
°
C : -55 to 150 C
Handling Code
TU : Tube
Lead Free Code
TR : Tape & Reel
Temp. Range
Package Code
L : Lead Free Device Blank : Original Device
APM2509N U :
APM2509N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
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Rev. B.4 - Jul., 2005
APM2509NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(TA=25°C Unless Otherwise Noted)
Drain-Source Voltage
25
±20
VDSS
VGSS
TJ
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
30
TC=25°C
Mounted on Large Heat Sink
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
100
65
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
50*
ID
38
50
PD
Maximum Power Dissipation
W
20
2.5
Rq
Thermal Resistance-Junction to Case
°C/W
JC
Mounted on PCB of 1in2 Pad Area
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
65
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
13
ID
8
2.5
PD
Maximum Power Dissipation
W
1
Rq
Thermal Resistance-Junction to Ambient
50
°C/W
JA
Mounted on PCB of Minimum Footprint
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
65
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
10.5
6
ID
1.6
0.6
PD
Maximum Power Dissipation
W
Rq
Thermal Resistance-Junction to Ambient
75
°C/W
JA
Note:
* Current limited by bond wire.
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Rev. B.4 - Jul., 2005
APM2509NU
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2509NU
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
ID=15A, L=0.5mH
50
mJ
V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
25
m
VGS=0V, IDS=250 A
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
m
A
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
m
1.3
1.8
2.5
±100
9
V
VDS=VGS, IDS=250 A
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
VGS=4.5V, IDS=15A
nA
7.5
13
a
RDS(ON) Drain-Source On-state Resistance
W
m
18
Diode Characteristics
a
VSD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=10A, VGS=0V
0.9
17
6
1.1
V
b
trr
ns
nC
m
ISD=10A, dISD/dt =100A/ s
b
Qrr
Dynamic Characteristics b
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.8
1560
345
245
17
W
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
W
VDD=15V, RL=15 ,
18
IDS=1A, VGEN=10V,
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
41
W
RG=6
16
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
17.5
5
VDS=15V, VGS=4.5V,
IDS=30A
nC
11
Notes:
m
a : Pulse test ; pulse width£300 s, duty cycle£2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.4 - Jul., 2005
APM2509NU
Typical Characteristics
Drain Current
Power Dissipation
60
50
40
30
20
10
0
60
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300
100
2
1
Duty = 0.5
10ms
0.2
100ms
0.1
0.05
0.1
0.01
1E-3
10
1
1s
0.02
0.01
DC
Single Pulse
Mounted on 1in2 pad
R
qJA :50oC/W
Tc=25oC
0.1
0.1
1
10
70
1E-4 1E-3 0.01 0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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Rev. B.4 - Jul., 2005
APM2509NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
100
22
20
18
16
14
12
10
8
VGS=4,5,6,7,8,9,10V
90
80
VGS=4.5V
70
60
50
40
30
20
10
0
3.5V
3V
VGS=10V
6
2.5V
1.6
4
2
0.0
0.4
0.8
1.2
2.0
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
Transfer Characteristics
100
90
80
70
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS =250mA
Tj=125oC
Tj=25oC
Tj=-55oC
0
1
2
3
4
5
6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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Rev. B.4 - Jul., 2005
APM2509NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
40
10
VGS = 10V
IDS = 30A
1.6
1.4
1.2
1.0
0.8
0.6
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 7.5mW
0.4
-50 -25
0.1
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
10
Frequency=1MHz
VDS=15V
ID = 30A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Rev. B.4 - Jul., 2005
APM2509NU
Avalanche Test Circuit and Waveforms
VDS
VDSX(SUS)
L
tp
VDS
DUT
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
V GS
RG
VDD
10%
tp
VGS
td(on) tr
td(off) tf
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Rev. B.4 - Jul., 2005
APM2509NU
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
A1
Millimeters
Dim
Inches
Min.
2.18
0.89
0.508
5.207
0.46
0.46
5.334
6.35
3.96
9.398
0.51
0.64
0.89
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
6.73
5.18
10.41
Min.
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
A
A1
b
b2
C
C1
D
E
e1
H
L
L1
L2
1.02
0.040
0.080
2.032
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Rev. B.4 - Jul., 2005
APM2509NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. B.4 - Jul., 2005
APM2509NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
³ 2.5 mm
240 +0/-5°C
225 +0/-5°C
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
1.6 mm – 2.5 mm
³ 2.5 mm
260 +0°C*
260 +0°C*
250 +0°C*
260 +0°C*
250 +0°C*
245 +0°C*
260 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
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Rev. B.4 - Jul., 2005
APM2509NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
16.4 + 0.3
-0.2
T2
W
16+ 0.3
- 0.1
P
E
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
(mm)
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.4 - Jul., 2005
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