APM2512N [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM2512N |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2512N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
•
25V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V
RDS(ON)=13mΩ(typ.) @ VGS=4.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
1
2
3
•
•
Reliable and Rugged
G
D
S
TO-252 Package
Top View of TO-252
D
Applications
•
Power Management in Computer, Portable
Equipment and Battery Powered Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
APM2512N
Operation Junction Temp. Range
Lead Free Code
Handling Code
C :-55 to 150 C
°
Handling Code
TR : Tape & Reel
L : Lead Free Code
Temp. Range
Package Code
L : Lead Free Device Blank : Original Device
APM2512N
XXXXX
APM2512N U :
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
Parameter
Rating
25
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGSS
±20
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
1
www.anpec.com.tw
APM2512N
Absolute Maximum Ratings (Cont.) (TC= 25°C unless otherwise noted)
Symbol
Parameter
Rating
40
Unit
ID
Maximum Drain Current – Continuous
A
IDM
90
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
50
Tc=25°C
Maximum Power Dissipation
Tc=100°C
W
PD
20
-55 to 150
50
TJ,TSTG
Maximum Operating and Storage Junction Temperature
Thermal Resistance – Junction to Ambient
Thermal Resistance – Junction to Case
°C
*
RθJA
°C/W
2.5
RθJC
* Mounted on 1in2 pad area of PCB.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2512N
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static
Drain-Source Breakdown
Voltage
BVDSS
25
V
VGS=0V , IDS=250µA
Zero Gate Voltage Drain
Current
IDSS
V
DS=20V , VGS=0V
1
µA
VGS(th) Gate Threshold Voltage
V
V
V
DS=VGS , IDS=250µA
GS=±20V , VDS=0V
1
1.5
2
IGSS
Gate Leakage Current
Drain-Source On-state
Resistance
nA
±100
12
VGS=10V , IDS=20A
GS=4.5V , IDS=10A
9
a
RDS(ON)
mΩ
V
13
0.9
20
a
VSD
Diode Forward Voltage
ISD=10A , VGS=0V
V
1.3
Dynamicb
Qg
Total Gate Charge
VDS=15V , IDS= 10A
28
3.6
8.4
10
38
Qgs
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS=10V ,
nC
ns
Qgd
td(ON)
Tr
td(OFF)
Tf
20
25
50
20
V
V
DD=10V , IDS=10A ,
15
GEN=10V , RG=6Ω
35
15
Ciss
Input Capacitance
VGS=0V
1560
345
245
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS=15V
pF
Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
2
www.anpec.com.tw
APM2512N
Typical Characteristics
Output Characteristics
Transfer Characteristics
40
35
30
25
20
15
10
5
40
VGS=5,6,7,8,9,10V
VGS=4V
35
30
25
20
15
10
5
VGS=3.5V
Tj=125oC
VGS=3V
Tj=-55oC
Tj=25oC
VGS=2.5V
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
6
7
8
9
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.8
0.024
IDS =250µA
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS=4.5V
VGS=10V
-50 -25
0
25 50 75 100 125 150
0
5
10 15 20 25 30 35 40
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
3
www.anpec.com.tw
APM2512N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.8
0.016
ID=20A
VGS = 10V
IDS = 20A
0.015
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
RON@Tj = 25°C: 9mΩ
-50 -25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
8
3000
2500
2000
1500
1000
500
Frequency=1MHz
VDS= 15 V
DS = 10A
I
6
Ciss
4
2
Coss
Crss
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
4
www.anpec.com.tw
APM2512N
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
40
700
600
500
400
300
200
100
0
Mounted on 1in2 pad
TA=25oC
10
Tj=150oC
Tj=25oC
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-4 1E-3 0.01
0.1
1
10
100300
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
0.01
1E-3
P D M
D=0.05
t
1
D=0.02
D=0.01
t
2
1.Duty Cycle, D= t1/t2
2.Per Unit Base=RthJA=50oC/W
3.TJM-TA=PDM
SINGLE PULSE
Z
thJA
4.Surface Mounted on 1in2 pad
1E-4
1E-3
0.01
0.1
1
10 100 300
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
5
www.anpec.com.tw
APM2512N
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
A1
Millimeters
Inches
Dim
Min.
2.18
0.89
0.508
5.207
0.46
0.46
5.334
6.35
3.96
9.398
0.51
0.64
0.89
Max.
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
A
A1
b
2.39
1.27
0.89
5.461
0.58
0.58
6.22
6.73
5.18
10.41
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
b2
C
C1
D
E
e1
H
L
L1
L2
1.02
0.040
0.080
2.032
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
6
www.anpec.com.tw
APM2512N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183 C to Peak)
3 C/second max.
°
10 C /second max.
°
°
120 seconds max
60 – 150 seconds
10 –20 seconds
Preheat temperature 125 ± 25 C)
Temperature maintained above 183 C
°
°
60 seconds
Time within 5 C of actual peak temperature
°
Peak temperature range
Ramp-down rate
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C
°
°
°
°
6 C /second max.
10 C /second max.
°
°
6 minutes max.
Time 25 C to peak temperature
°
Package Reflow Conditions
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 C
Convection 235 +5/-0 C
°
°
VPR 215-219 C
VPR 235 +5/-0 C
°
°
IR/Convection 220 +5/-0 C
IR/Convection 235 +5/-0 C
°
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
7
www.anpec.com.tw
APM2512N
Reliability test program
Test item
SOLDERABILITY
Method
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
HOLT
PCT
TST
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
16.4 + 0.3
-0.2
T2
W
16+ 0.3
- 0.1
P
E
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
8
www.anpec.com.tw
APM2512N
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
9
www.anpec.com.tw
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