AF9928NTS [ANACHIP]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | AF9928NTS |
| 厂家： | 
ANACHIP CORP |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总6页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AF9928N
N-Channel Enhancement Mode Power MOSFET
Features
General Description
- Low On-resistance
The Advanced Power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
- Capable of 2.5V Gate Drive
- Optimal DC/DC battery application
Product Summary
BVDSS (V)
rDS(on) (mΩ)
ID (A)
5
20
23
Pin Descriptions
Pin Assignments
1
2
3
4
8
7
6
5
D1
S1
S1
G1
D2
S2
S2
G2
Pin Name
S1/2
Description
Source
Gate
G1/2
D1/2
Drain
TSSOP-8
Ordering information
A X 9928N X X X
Packing
Package
Feature
PN
Lead Free
Blank : Normal
L : Lead Free Package
F :MOSFET
TS: TSSOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Nov 8, 2004
1/6
AF9928N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
20
V
V
VGS
±12
at TA=25ºC
at TA=70ºC
5
3.5
ID
Drain Current (Note 1), at VGS=4.5V
A
IDM
PD
Pulsed Drain Current (Note 2)
Total Power Dissipation
25
A
W
1
at TA=25ºC
Linear Derating Factor
0.008
-55 to 150
-55 to 150
W/ºC
ºC
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
ºC
Thermal Data
Symbol
Parameter
Value
125
Units
Rthj-a
Thermal Resistance Junction-Ambient (Note 1)
Max.
oC/W
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, 208oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Electrical Characteristics at TJ=25ºC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
20
-
-
V
-
0.02
-
V/oC
∆BVDSS /∆TJ
VGS=4.5V, ID=5A
VGS=2.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=20V, VGS=0V,
TJ=25ºC
-
-
-
-
23
29
-
mΩ
mΩ
V
Static Drain-Source On-Resistance
RDS(on)
(Note 3)
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
21
-
S
-
-
1
uA
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V,
TJ=70ºC
-
-
25
uA
IGSS
Qg
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
VGS=±12V
-
-
-
-
-
-
-
-
-
-
-
-
±10
uA
nC
nC
nC
ns
15.9
1.5
7.4
6.2
9
-
-
-
-
-
-
-
-
-
-
ID=5A,
VDS=10V,
Qgs
Qgd
td(on)
tr
V
GS=4.5V
VDS=10V,
ID=1A,
ns
RG=3.3Ω, VGS=4.5V
td(off)
Turn-Off Delay Time
Fall-Time
30
11
530
245
125
ns
RD=10Ω
tf
ns
Ciss
Coss
Crss
Input Capacitance
pF
pF
pF
VGS=0V,
V
DS=20V,
Output Capacitance
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Continuous Source Current (Body
Diode)
IS
VD=VG=0V, VS=1.2V
TJ=25ºC , IS=5A,
-
-
0.83
A
VSD
Forward On Voltage (Note 3)
-
-
1.2
V
V
GS=0V
Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 8, 2004
2/6
AF9928N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Maximum Drain Current v.s. Case
Temperature
Fig 6. Typical Power Dissipation
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 8, 2004
3/6
AF9928N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 12. Gate Threshold Voltage v.s. Junction
Temperature
Fig 11. Forward Characteristic of Reverse Diode
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 8, 2004
4/6
AF9928N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Fig 14. Switching Time Waveform
Fig 13. Switching Time Circuit
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Marking Information
TSSOP-8L
( Top View )
Lot code:
Logo
Part Number
"X": Lead Free
"X": Non-Lead Free;
"A~Z": 01~26;
9 9 2 8 N
"A~Z": 27~52
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
Year code:
"4" =2004
Factory code
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 8, 2004
5/6
AF9928N
N-Channel Enhancement Mode Power MOSFET
Package Information
Package Type: TSSOP-8L
S
R
θ
L
L1
DETAIL A
E1
D
e
DETAIL A
b
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
1.05
0.05
0.99
0.25
0.10
2.90
6.20
4.30
-
0.45
0.90
0.09
0.20
Nom.
1.10
0.10
1.00
0.28
0.13
3.00
6.40
4.40
0.65
0.60
1.00
-
Max.
1.20
0.15
1.05
0.30
0.15
3.10
6.60
4.50
-
Min.
Nom.
0.043
0.004
0.039
0.011
0.005
0.118
0.252
0.173
0.026
0.024
0.039
-
Max.
0.047
A
A1
A2
b
0.041
0.002
0.039
0.010
0.004
0.114
0.244
0.169
-
0.018
0.035
0.004
0.008
0.006
0.041
0.012
0.006
0.122
0.260
0.177
-
C
D
E
E1
e
L
0.75
1.10
-
0.030
0.043
-
L1
R
S
-
-
-
-
-
O
O
O
O
θ
0
-
8
0
8
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 8, 2004
6/6
相关型号：
AF9928NTSA
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
ICT
AF9928NTSL
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSSOP-8
ICT
AF9928NTSLA
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSSOP-8
ICT
AF9945NSA
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
ICT
AF9945NSL
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
ICT
AF9945NSLA
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
ICT
©2020 ICPDF网 联系我们和版权申明