AF9945NSA [ANACHIP]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | AF9945NSA |
| 厂家： | 
ANACHIP CORP |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AF9945N
N-Channel Enhancement Mode Power MOSFET
Features
General Description
- Low On-resistance
The Advanced Power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
- Single Drive Requirement
- Surface Mount Package
Product Summary
BVDSS (V)
rDS(on) (mΩ)
ID (A)
3.5
60
90
Pin Assignments
Pin Descriptions
Pin Name
S1/2
Description
Source
Gate
1
2
3
4
8
7
6
5
S1
D1
G1/2
G1
S2
D1
D2
D1/2
Drain
G2
D2
SOP-8
Ordering information
A X 9945N X X X
Packing
Package
S: SOP-8
Feature
PN
Lead Free
Blank : Normal
L : Lead Free Package
F :MOSFET
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 12, 2004
1/5
AF9945N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
60
±25
V
V
VGS
TA=25ºC
TA=70ºC
3.5
ID
Continuous Drain Current (Note 1)
A
2.8
IDM
PD
Pulsed Drain Current (Note 2)
Total Power Dissipation
20
A
W
TA=25ºC
2
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/ºC
ºC
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
ºC
Thermal Resistance Ratings
Symbol
Parameter
Value
62.5
Units
Rthj-a
Thermal Resistance Junction-Ambient (Note 1)
Max.
oC/W
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Electrical Characteristics at TJ=25ºC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
60
-
-
V
-
0.04
-
V/oC
∆BVDSS /∆TJ
VGS=10V, ID=3A
-
-
1
-
-
-
90
120
3
mΩ
mΩ
V
Static Drain-Source On-Resistance
RDS(on)
(Note 3)
V
GS=4.5V, ID=2A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=60V, VGS=0V,
TJ=25ºC
-
6
-
S
-
-
10
uA
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V,
TJ=70ºC
-
-
25
uA
IGSS
Qg
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
VGS=±25V
-
-
-
-
-
-
-
-
-
-
-
-
-
6
±100
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
ID=3A,
VDS=48V,
Qgs
Qgd
td(on)
tr
2
-
V
GS=4.5V
3
-
6
-
VDS=30V,
ID=1A,
5
-
RG=3.3Ω, VGS=10V
td(off)
tf
Turn-Off Delay Time
Fall-Time
16
3
-
RD=30Ω
-
Ciss
Coss
Crss
RG
Input Capacitance
510
55
35
1.3
810
VGS=0V,
VDS=25V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
-
f=1.0MHz
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
Min.
Typ.
-
27
32
Max. Units
Forward On Voltage (Note 3)
Reverse Recovery Time (Note 3)
Reverse Recovery Charge
IS=1.7A, VGS=0V
IS=4A, VGS=0V,
dl/dt=100A/µs
-
-
-
1.2
V
trr
Qrr
-
-
ns
nC
Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 12, 2004
2/5
AF9945N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 12, 2004
3/5
AF9945N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 12, 2004
4/5
AF9945N
N-Channel Enhancement Mode Power MOSFET
Marking Information
SOP-8L
( Top View )
8
Lot code:
Logo
Part Number
"X": Lead Free
"X": Non-Lead Free;
"A~Z": 01~26;
"A~Z": 27~52
9 9 4 5 N
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
Factory code
Package Information
Package Type: SOP-8L
L
VIEW "A"
D
0.015x45
(4X)
e
(4X)
7
7
B
VIEW "A"
y
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
1.40
0.10
1.30
0.33
0.19
4.80
3.70
-
Nom.
1.60
-
Max.
1.75
0.25
1.50
0.51
0.25
5.30
4.10
-
6.20
1.27
0.10
8O
Min.
Nom.
0.063
-
Max.
0.069
A
A1
A2
B
0.055
0.040
0.051
0.013
0.0075
0.189
0.146
-
0.100
0.059
0.020
0.010
0.209
0.161
-
0.244
0.050
0.004
8O
1.45
0.41
0.20
5.05
3.90
1.27
5.99
0.71
-
0.057
0.016
0.008
0.199
0.154
0.050
0.236
0.028
-
C
D
E
e
H
L
5.79
0.38
-
0.228
0.015
-
y
0O
-
0O
-
θ
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 12, 2004
5/5
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