AF9945NSLA [ICT]
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8;
| 型号： | AF9945NSLA |
| 厂家： | 
InnoChips Technology |
| 描述： | Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AF9945N
N-Channel Enhancement Mode Power MOSFET
Features
General Description
- Low On-resistance
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
- Single Drive Requirement
- Surface Mount Package
Product Summary
BVDSS (V)
RDS(ON) (mΩ)
ID (A)
3.3
60
100
Pin Descriptions
Pin Assignments
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
Pin Name
S1/2
Description
Source
Gate
G1/2
D1/2
Drain
SO-8
Ordering information
A
X
9945N X X X
Packing
Package
S: SO-8
Feature
PN
Lead Free
Blank : Normal
L : Lead Free Package
F :MOSFET
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/5
AF9945N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
60
V
VGS
±25
V
TA=25ºC
TA=70ºC
3.3
ID
Continuous Drain Current (Note 1)
A
2.7
IDM
PD
Pulsed Drain Current (Note 2)
Total Power Dissipation
20
A
W
2
TA=25ºC
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/ºC
ºC
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
ºC
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
62.5
ºC/W
Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
60
-
-
V
Breakdown Voltage Temperature Reference to 25oC,
-
0.04
-
V/oC
∆BVDSS / ∆TJ
Coefficient
ID=1mA
Static Drain-Source
VGS=10V, ID=3A
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=3A
-
-
1
-
-
-
100
125
3
RDS(ON)
mΩ
On-Resistance (Note 3)
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
-
V
S
6
-
VDS=60V, VGS=0V
-
-
10
IDSS
uA
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
(TJ=70oC)
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
VGS=±25V
ID=3A,
-
-
-
-
-
-
-
-
-
-
-
-
-
6
±100
nA
nC
10
VDS=48V,
2
-
V
GS=4.5V
3
-
6
-
VDS=30V,
ID=1A,
5
-
ns
RG=3.3Ω, VGS=10V
RD=30Ω
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
16
3
-
-
510
55
35
1.3
810
VGS=0V,
VDS=25V,
f=1.0MHz
pF
nA
-
-
-
f=1.0MHz
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
IS=1.7A, VGS=0V
IS=4A, VGS=0V,
dl/dt=100A/µs
Min.
Typ.
-
Max.
Unit
V
Forward On Voltage (Note 3)
Reverse Recovery Time (Note 3)
Reverse Recovery Charge
-
-
-
1.2
trr
27
32
-
-
ns
Qrr
nC
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, t≤10 sec; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.1 Sep 5, 2005
AF9945N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
3/5
Rev. 1.1 Sep 5, 2005
AF9945N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
4/5
Rev. 1.1 Sep 5, 2005
AF9945N
N-Channel Enhancement Mode Power MOSFET
Marking Information
SO-8
( Top View )
8
Lot code:
Logo
Part Number
"X": Lead Free
"X": Non-Lead Free;
"A~Z": 01~26;
"A~Z": 27~52
9 9 4 5 N
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
Factory code
Package Information
Package Type: SO-8
D
8
1
7
2
6
3
5
θ
4
L
DETAIL A
B
e
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Dimensions In Millimeters
Symbol
Min.
1.35
0.10
0.33
0.19
4.80
5.80
3.80
0.38
0o
Nom.
1.55
Max.
1.75
0.25
0.51
0.25
5.00
6.50
4.00
1.27
8o
A
A1
B
0.18
0.41
C
D
E
0.22
4.90
6.15
E1
L
3.90
0.71
θ
e
4o
1.27 TYP.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
5/5
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