AF9928NTSA [ICT]
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8;
| 型号： | AF9928NTSA |
| 厂家： | 
InnoChips Technology |
| 描述： | Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 |
| 文件： | 总5页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AF9928N
N-Channel Enhancement Mode Power MOSFET
Features
General Description
- Low On-resistance
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
- Capable of 2.5V Gate Drive
- Optimal DC/DC battery application
Product Summary
BVDSS (V)
rDS(on) (mΩ)
ID (A)
5
20
23
Pin Descriptions
Pin Assignments
1
2
3
4
8
7
6
5
D1
S1
S1
G1
D2
S2
S2
G2
Pin Name
S1/2
Description
Source
Gate
G1/2
D1/2
Drain
TSSOP-8
Ordering information
A X 9928N X X X
Packing
Package
Feature
PN
Lead Free
Blank : Normal
L : Lead Free Package
F :MOSFET
TS: TSSOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Aug 11, 2005
1/5
AF9928N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
20
V
V
VGS
±12
at TA=25ºC
at TA=70ºC
5
3.5
ID
Drain Current (Note 1), at VGS=4.5V
A
IDM
PD
Pulsed Drain Current (Note 2)
Total Power Dissipation
25
A
W
1
at TA=25ºC
Linear Derating Factor
0.008
-55 to 150
-55 to 150
W/ºC
ºC
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
ºC
Thermal Data
Symbol
Parameter
Value
125
Units
Rthj-a
Thermal Resistance Junction-Ambient (Note 1)
Max.
oC/W
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, 208oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Electrical Characteristics at TJ=25ºC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
20
-
-
V
-
0.02
-
V/oC
∆BVDSS /∆TJ
VGS=4.5V, ID=5A
VGS=2.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=20V, VGS=0V,
TJ=25ºC
-
-
-
-
23
29
-
mΩ
mΩ
V
Static Drain-Source On-Resistance
RDS(on)
(Note 3)
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
21
-
S
-
-
1
uA
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V,
TJ=70ºC
-
-
25
uA
IGSS
Qg
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
VGS=±12V
-
-
-
-
-
-
-
-
-
-
-
-
±10
uA
nC
nC
nC
ns
15.9
1.5
7.4
6.2
9
-
-
-
-
-
-
-
-
-
-
ID=5A,
VDS=10V,
Qgs
Qgd
td(on)
tr
V
GS=4.5V
VDS=10V,
ID=1A,
ns
RG=3.3Ω, VGS=4.5V
td(off)
Turn-Off Delay Time
Fall-Time
30
11
530
245
125
ns
RD=10Ω
tf
ns
Ciss
Coss
Crss
Input Capacitance
pF
pF
pF
VGS=0V,
VDS=20V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
Parameter
Test Conditions
VD=VG=0V, VS=1.2V
TJ=25ºC , IS=5A,
Min.
Typ. Max. Units
Continuous Source Current (Body
Diode)
IS
-
-
0.83
A
VSD
Forward On Voltage (Note 3)
-
-
1.2
V
V
GS=0V
Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 11, 2005
2/5
AF9928N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
3/5
Rev. 1.1 Aug 11, 2005
AF9928N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
4/5
Rev. 1.1 Aug 11, 2005
AF9928N
N-Channel Enhancement Mode Power MOSFET
Marking Information
TSSOP-8L
( Top View )
Lot code:
Logo
Part Number
"X": Lead Free
"X": Non-Lead Free;
"A~Z": 01~26;
"A~Z": 27~52
9 9 2 8 N
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
Year code:
"4" =2004
Factory code
Package Information
Package Type: TSSOP-8L
D
θ
L
DETAIL A
e
B
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Dimensions In Millimeters
Symbol
Min.
-
Nom.
Max.
1.20
0.15
0.30
-
A
A1
B
-
-
0.05
0.19
-
2.90
6.20
4.30
0.45
-
C
D
E
0.127
3.00
6.40
4.40
0.60
0.65 REF.
--
3.10
6.60
4.50
0.75
E1
L
e
θ
0o
8o
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 11, 2005
5/5
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