AF9928NTSA [ICT]

Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8;
AF9928NTSA
型号: AF9928NTSA
厂家: InnoChips Technology    InnoChips Technology
描述:

Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

文件: 总5页 (文件大小:463K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AF9928N  
N-Channel Enhancement Mode Power MOSFET  
„ Features  
„ General Description  
- Low On-resistance  
The advanced power MOSFET provides the designer  
with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
- Capable of 2.5V Gate Drive  
- Optimal DC/DC battery application  
„ Product Summary  
BVDSS (V)  
rDS(on) (m)  
ID (A)  
5
20  
23  
„ Pin Descriptions  
„ Pin Assignments  
1
2
3
4
8
7
6
5
D1  
S1  
S1  
G1  
D2  
S2  
S2  
G2  
Pin Name  
S1/2  
Description  
Source  
Gate  
G1/2  
D1/2  
Drain  
TSSOP-8  
„ Ordering information  
A X 9928N X X X  
Packing  
Package  
Feature  
PN  
Lead Free  
Blank : Normal  
L : Lead Free Package  
F :MOSFET  
TS: TSSOP-8  
Blank : Tube or Bulk  
A : Tape & Reel  
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of  
this product. No rights under any patent accompany the sale of the product.  
Rev. 1.1 Aug 11, 2005  
1/5  
AF9928N  
N-Channel Enhancement Mode Power MOSFET  
„ Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Rating  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
V
V
VGS  
±12  
at TA=25ºC  
at TA=70ºC  
5
3.5  
ID  
Drain Current (Note 1), at VGS=4.5V  
A
IDM  
PD  
Pulsed Drain Current (Note 2)  
Total Power Dissipation  
25  
A
W
1
at TA=25ºC  
Linear Derating Factor  
0.008  
-55 to 150  
-55 to 150  
W/ºC  
ºC  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
ºC  
„ Thermal Data  
Symbol  
Parameter  
Value  
125  
Units  
Rthj-a  
Thermal Resistance Junction-Ambient (Note 1)  
Max.  
oC/W  
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, 208oC/W when mounted on Min. copper pad.  
Note 2: Pulse width limited by Max. junction temperature.  
„ Electrical Characteristics at TJ=25ºC (unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ. Max. Units  
BVDSS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
VGS=0V, ID=250uA  
Reference to 25oC,  
ID=1mA  
20  
-
-
V
-
0.02  
-
V/oC  
BVDSS /TJ  
VGS=4.5V, ID=5A  
VGS=2.5V, ID=2A  
VDS=VGS, ID=250uA  
VDS=10V, ID=5A  
VDS=20V, VGS=0V,  
TJ=25ºC  
-
-
-
-
23  
29  
-
m  
mΩ  
V
Static Drain-Source On-Resistance  
RDS(on)  
(Note 3)  
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
0.5  
-
-
21  
-
S
-
-
1
uA  
IDSS  
Drain-Source Leakage Current  
VDS=20V, VGS=0V,  
TJ=70ºC  
-
-
25  
uA  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge (Note 3)  
Gate-Source Charge  
Gate-Drain (“Miller”) Charge  
Turn-On Delay Time (Note 3)  
Rise Time  
VGS=±12V  
-
-
-
-
-
-
-
-
-
-
-
-
±10  
uA  
nC  
nC  
nC  
ns  
15.9  
1.5  
7.4  
6.2  
9
-
-
-
-
-
-
-
-
-
-
ID=5A,  
VDS=10V,  
Qgs  
Qgd  
td(on)  
tr  
V
GS=4.5V  
VDS=10V,  
ID=1A,  
ns  
RG=3.3, VGS=4.5V  
td(off)  
Turn-Off Delay Time  
Fall-Time  
30  
11  
530  
245  
125  
ns  
RD=10Ω  
tf  
ns  
Ciss  
Coss  
Crss  
Input Capacitance  
pF  
pF  
pF  
VGS=0V,  
VDS=20V,  
f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
„ Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
VD=VG=0V, VS=1.2V  
TJ=25ºC , IS=5A,  
Min.  
Typ. Max. Units  
Continuous Source Current (Body  
Diode)  
IS  
-
-
0.83  
A
VSD  
Forward On Voltage (Note 3)  
-
-
1.2  
V
V
GS=0V  
Note3: Pulse width 300us, duty cycle 2%.  
Anachip Corp.  
www.anachip.com.tw  
Rev. 1.1 Aug 11, 2005  
2/5  
AF9928N  
N-Channel Enhancement Mode Power MOSFET  
„ Typical Performance Characteristics  
Anachip Corp.  
www.anachip.com.tw  
3/5  
Rev. 1.1 Aug 11, 2005  
AF9928N  
N-Channel Enhancement Mode Power MOSFET  
„ Typical Performance Characteristics (Continued)  
Anachip Corp.  
www.anachip.com.tw  
4/5  
Rev. 1.1 Aug 11, 2005  
AF9928N  
N-Channel Enhancement Mode Power MOSFET  
„ Marking Information  
TSSOP-8L  
( Top View )  
Lot code:  
Logo  
Part Number  
"X": Lead Free  
"X": Non-Lead Free;  
"A~Z": 01~26;  
"A~Z": 27~52  
9 9 2 8 N  
AA Y W X  
Week code:  
"A~Z": 01~26;  
"A~Z": 27~52  
Year code:  
"4" =2004  
Factory code  
„ Package Information  
Package Type: TSSOP-8L  
D
θ
L
DETAIL A  
e
B
DETAIL A  
1. All Dimensions Are in Millimeters.  
2. Dimension Does Not Include Mold Protrusions.  
Dimensions In Millimeters  
Symbol  
Min.  
-
Nom.  
Max.  
1.20  
0.15  
0.30  
-
A
A1  
B
-
-
0.05  
0.19  
-
2.90  
6.20  
4.30  
0.45  
-
C
D
E
0.127  
3.00  
6.40  
4.40  
0.60  
0.65 REF.  
--  
3.10  
6.60  
4.50  
0.75  
E1  
L
e
θ
0o  
8o  
Anachip Corp.  
www.anachip.com.tw  
Rev. 1.1 Aug 11, 2005  
5/5  

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