ALD110804SC [ALD]
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY; QUAD /双N沟道增强型EPAD匹配的一对MOSFET阵列
| 型号： | ALD110804SC |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
ADVANCED
LINEAR
®
e
EPAD
A
DEVICES, INC.
ALD110804/ALD110904
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
V
= +0.4V
GS(th)
MATCHED PAIR MOSFET ARRAY
APPLICATIONS
GENERAL DESCRIPTION
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage(<0.4V) circuits
• Sub-threshold biased and operated circuits
• Precision current mirrors and current sources
• Nano-Amp current sources
• High impedance resistor simulators
• Capacitive probes and sensor interfaces
• Differential amplifier input stages
• Discrete Voltage comparators and level shifters
• Voltage bias circuits
ALD110804/ALD110904 are monolithic quad/dual N-Channel MOSFETs
matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110804/ALD110904 MOSFETs are designed and built for ex-
ceptional device electrical characteristics matching. Since these devices
are on the same monolithic chip, they also exhibit excellent tempco tracking
characteristics. They are versatile circuit elements useful as design com-
ponents for a broad range of analog applications, such as basic building
blocks for current sources, differential amplifier input stages, transmis-
sion gates, and multiplexer applications. For most applications, connect
-
V and N/C pins to the most negative voltage potential in the system and
+
V
• Sample and Hold circuits
• Analog and digital inverters
pin to the most positive voltage potential (or left open unused). All
other pins must have voltages within these voltage limits.
• Charge detectors and charge integrators
• Source followers and High Impedance buffers
• Current multipliers
TheALD110804/ALD110904 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold charac-
teristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infi-
nite) current gain in a low frequency, or near DC, operating environment.
• Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110804
The ALD110804/ALD110904 are suitable for use in very low operating
voltage or very low power (nanowatt), precision applications which re-
quire very high current gain, beta, such as current mirrors and current
sources. The high input impedance and the high DC current gain of the
Field Effect Transistors result from extremely low current loss through
the control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example,
DC beta of the device at a drain current of 3mA and input leakage current
of 30pA at 25°C is = 3mA/30pA = 100,000,000.
-
-
V
V
1
2
3
4
5
6
7
8
N/C*
16
15
14
13
12
11
10
9
N/C*
G
N2
G
N1
M 2
M 1
D
N1
D
N2
+
+
V
V
S
12
-
-
V
S
V
34
FEATURES
D
N3
D
N4
M 4
M 3
G
G
N3
N4
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.40V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
N/C*
N/C*
-
-
V
V
PC, SC PACKAGES
ALD110904
• Low input capacitance
• V
match (V ) to 10mV
GS(th)
OS
• High input impedance — 1012Ω typical
• Positive, zero, and negative V
• DC current gain >108
• Low input and output leakage currents
temperature coefficient
GS(th)
-
-
V
V
1
2
3
4
8
7
6
5
N/C*
N/C*
G
G
N2
N1
ORDERING INFORMATION
M 1
M 2
D
N1
D
N2
Operating Temperature Range*
0°C to +70°C 0°C to +70°C
-
-
S
12
V
V
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
8Pin
SOIC
Package
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD110804PC
ALD110804SC ALD110904PA ALD110904SA
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND
T
A
= 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110804 / ALD110904
Parameter
Symbol
Min
0.38
Typ
0.40
Max
Unit
Test Conditions
I =1µA
DS
Gate Threshold Voltage
V
V
0.42
V
GS(th)
OS
V
= 0.1V
DS
Offset Voltage
2
10
mV
V
-V
GS(th)1 GS(th)2
Offset VoltageTempco
TC ∆
5
µV/ °C
mV/ °C
V
= V
DS2
VOS
DS1
GateThreshold Voltage Tempco
TC∆
-1.7
0.0
+1.6
I
D
I
D
I
D
= 1µA
VGS(th)
= 20µA, V
= 40µA
= 0.1V
DS
On Drain Current
I
12.0
3.0
mA
V
V
V
= + 9.7V
= + 4.2V
= +5V
DS (ON)
GS
GS
DS
Forward Transconductance
G
1.4
mmho
V
V
= + 4.2V
= + 9.2V
FS
GS
DS
Transconductance Mismatch
Output Conductance
∆G
FS
1.8
68
%
G
µmho
V
V
=+4.2V
= +9.2V
OS
GS
DS
Drain Source On Resistance
R
500
0.5
10
10
3
Ω
%
V
V
V
= 0.1V
= +4.2V
DS (ON)
DS
GS
Drain Source On Resistance
Mismatch
∆R
BV
I
DS (ON)
DSX
Drain Source Breakdown
Voltage
I
V
= 1.0µA
= -0.8V
DS
GS
Drain Source Leakage Current1
100
4
pA
nA
V
V
= -0.8V
=10V, T = 125°C
DS (OFF)
GS
DS
A
Gate Leakage Current1
I
30
1
pA
nA
V
= 0V V
=125°C
= 10V
GS
GSS
DS
T
A
Input Capacitance
C
C
2.5
0.1
10
pF
pF
ns
ns
ISS
Transfer Reverse Capacitance
Turn-on Delay Time
RSS
+
+
t
on
t
off
V
V
= 5V R = 5KΩ
L
Turn-off Delay Time
10
= 5V R = 5KΩ
L
Crosstalk
60
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2
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