ALD110808 [ALD]
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY; QUAD /双N沟道增强型EPAD匹配的一对MOSFET阵列
| 型号： | ALD110808 |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
ADVANCED
LINEAR
®
e
EPAD
A
DEVICES, INC.
ALD110808/ALD110808A/ALD110908/ALD110908A
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
V
= +0.8V
GS(th)
MATCHED PAIR MOSFET ARRAY
APPLICATIONS
GENERAL DESCRIPTION
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/
dual N-Channel MOSFETs matched at the factory using ALD’s proven
EPAD® CMOS technology. These devices are intended for low voltage,
small signal applications.
• Voltage bias circuits
• Sample and Hold
• Analog inverter
• Level shifters
• Source followers and buffers
• Current multipliers
These MOSFET devices are built on the same monolithic chip, so they
exhibit excellent temperature tracking characteristics. They are versatile
as circuit elements and are useful design component for a broad range of
analog applications. They are basic building blocks for current sources,
differential amplifier input stages, transmission gates, and multiplexer
applications. For most applications, connect V- and N/C pins to the most
negative voltage potential in the system and V+ pin to the most positive
voltage potential (or left open unused). All other pins must have voltages
within these voltage limits.
• Analog switches / multiplexers
ALD110808/ALD110908 devices are built for minimum offset voltage and
differential thermal response, and they are suited for switching and ampli-
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias
current, low input capacitance and fast switching speed are desired. As
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
PIN CONFIGURATION
ALD110808
-
-
V
V
1
2
3
4
5
6
7
8
N/C*
16
15
14
13
12
11
10
9
N/C*
These devices are suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the
device at a drain current of 3mA and input leakage current of 30pA at
25°C is = 3mA/30pA = 100,000,000.
G
D
V
G
N2
N1
M 2
M 1
D
N1
N2
+
+
V
S
12
-
-
V
S
V
34
D
N3
D
N4
N4
M 4
M 3
FEATURES
G
G
N3
N/C*
N/C*
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +0.8V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
-
-
V
V
PC, SC PACKAGES
ALD110908
• V
match to 2mV and 10mV
GS(th)
• High input impedance — 1012Ω typical
• Positive,zero, and negative V
• DC current gain >108
temperature coefficient
GS(th)
-
-
V
V
• Low input and output leakage currents
1
2
3
4
8
7
6
5
N/C*
N/C*
G
N2
G
N1
ORDERING INFORMATION
M 1
M 2
D
N1
D
N2
Operating Temperature Range*
0°C to +70°C 0°C to +70°C
-
-
S
12
V
V
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
8Pin
SOIC
PA, SA PACKAGES
Package
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD110808APC ALD110808ASC ALD110908APA ALD110908ASA
ALD110808 PC ALD110808SC ALD110908PA ALD110908SA
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND T = 25°C unless otherwise specified
A
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110808A / ALD110908A ALD110808/ ALD110908
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test Condition
I =1µA
DS
Gate Threshold Voltage
V
0.78
0.80
0.82
0.78
0.80
0.82
V
GS(th)
V
= 0.1V
DS
Offset Voltage
V
1
5
2
3
5
10
mV
I
=1µA
OS
DS
V
-V
GS1 GS2
V
-V
Tempco
∆V
∆V
µV/ °C
V
= V
DS1 DS2
GS1 GS2
OS
-1.7
0.0
+1.6
-1.7
0.0
+1.6
I
D
I
D
I
D
= 1µA
= 20µA V
= 40µA
GateThreshold Tempco
On Drain Current
mV/ °C
= 0.1V
DS
GS(th)
I
12.0
3.0
12.0
3.0
mA
V
V
V
= +10.3V
= +4.8V
= +5V
DS (ON)
GS
GS
DS
Forward Transconductance
G
FS
1.4
1.4
mmho
V
V
= +4.8V
= +9.8V
GS
DS
Transconductance Mismatch
Output Conductance
∆G
FS
1.8
68
1.8
68
%
G
OS
µmho
V
V
=+4.8V
= +9.8V
GS
DS
Drain Source On Resistance
R
500
0.5
500
0.5
Ω
%
V
V
V
= 0.1V
= +4.8V
DS (ON)
DS
GS
Drain Source On Resistance
Mismatch
∆R
BV
I
DS (ON)
Drain Source Breakdown
Voltage
10
10
I
= 1.0µA
DS
DSX
V
= -0.2V
GS
Drain Source Leakage Current1
Gate Leakage Current1
10
3
100
4
10
3
100
4
pA
nA
V
V
= -0.2V
=10V, T = 125°C
DS (OFF)
GS
DS
A
I
30
1
30
1
pA
nA
V
= 0V V
=125°C
= 10V
GS
GSS
DS
T
A
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
C
C
2.5
0.1
10
10
60
2.5
0.1
10
10
60
pF
pF
ns
ns
dB
ISS
RSS
+
+
t
V
V
= 5V R = 5KΩ
L
on
off
t
= 5V R = 5KΩ
L
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
2
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