ALD110804SCL [ALD]
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY; QUAD /双N沟道增强型EPAD精密匹配的一对MOSFET阵列
| 型号： | ALD110804SCL |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY |
| 文件： | 总11页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
A
L
D
DVANCED
INEAR
EVICES, INC.
®
e
EPAD
A
ALD110804/ALD110904
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
V
= +0.40V
GS(th)
GENERAL DESCRIPTION
APPLICATIONS
ALD110804/ALD110904 are high precision monolithic quad/dual enhance-
ment mode N-Channel MOSFETS matched at the factory using ALD’s
proven EPAD® CMOS technology. These devices are intended for low
voltage, small signal applications. TheALD110804/ALD110904 MOSFETS
are designed and built for exceptional device electrical characteristics
matching. Since these devices are on the same monolithic chip, they also
exhibit excellent tempco tracking characteristics. They are versatile circuit
elements useful as design components for a broad range of analog appli-
cations, such as basic building blocks for current sources, differential am-
plifier input stages, transmission gates, and multiplexer applications. For
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage(<0.40V) circuits
• Sub-threshold biased and operated circuits
• Precision current mirrors and current sources
• Nano-Amp current sources
• High impedance resistor simulators
• Capacitive probes and sensor interfaces
• Differential amplifier input stages
• Discrete Voltage comparators and level shifters
• Voltage bias circuits
-
most applications, connect the V and IC pins to the most negative volt-
+
age in the system and the V pin to the most positive voltage. All other
• Sample and Hold circuits
pins must have voltages within these voltage limits at all times.
• Analog and digital inverters
• Charge detectors and charge integrators
• Source followers and High Impedance buffers
• Current multipliers
The ALD110804/ALD110904 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold character-
istics and can be biased and operated in the sub-threshold region. Since
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
• Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110804
The ALD110804/ALD110904 are suitable for use in very low operating
voltage or very low power (nanowatt), precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the de-
vice at a drain current of 3mA and input leakage current of 30pA at 25°C
is = 3mA/30pA = 100,000,000.
-
-
V
V
1
2
3
4
5
6
7
8
IC*
G
16
15
14
13
12
11
10
9
IC*
G
N2
N1
M 2
M 1
D
V
S
D
S
N2
N1
+
+
V
12
-
-
V
V
34
D
D
N4
N3
M 4
FEATURES
M 3
G
N4
G
N3
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.40V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
IC*
IC*
-
-
V
V
SCL, PCL PACKAGES
• Low input capacitance
• V
match (V ) to 10mV
GS(th)
OS
• High input impedance — 1012Ω typical
ALD110904
-
• Positive, zero, and negative V
temperature coefficient
GS(th)
• DC current gain >108
-
V
V
1
2
3
4
8
7
6
5
IC*
G
IC*
G
• Low input and output leakage currents
N2
N1
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
M 1
M 2
D
S
D
V
N1
N2
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
-
-
V
12
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
ALD110804SCL ALD110804PCL ALD110904SAL ALD110904PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD110804/ALD110904
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
0.38
0.40
2
0.42
10
V
I
= 1µA, V = 0.1V
DS
GS(th)
OS
DS
mV
V
-V
GS(th)1 GS(th)2
Offset VoltageTempco
TC
TC
5
µV/ °C
mV/ °C
V
= V
DS1
VOS
DS2
= 1µA, V = 0.1V
DS
GateThreshold Voltage Tempco
-1.7
0.0
+1.6
I
D
I
D
I
D
VGS(th)
= 20µA, V
= 40µA, V
= 0.1V
= 0.1V
DS
DS
On Drain Current
I
12.0
3.0
mA
V
V
= +9.9V, V
= +4.2V, V
= +5V
= +5V
DS (ON)
GS
GS
DS
DS
Forward Transconductance
G
FS
1.4
mmho
V
V
= +4.4V
= +9.4V
GS
DS
Transconductance Mismatch
Output Conductance
∆G
1.8
68
%
FS
G
OS
µmho
V
V
= +4.4V
= +9.4V
GS
DS
Drain Source On Resistance
R
500
0.5
Ω
%
V
V
V
= +0.1V
= +4.4V
DS (ON)
DS
GS
Drain Source On Resistance
Mismatch
∆R
BV
I
DS (ON)
DSX
Drain Source Breakdown
Voltage
10
I
V
= 1.0µA
DS
= -0.6V
GS
Drain Source Leakage Current1
10
3
400
4
pA
nA
V
= -0.6V, V
=+5V
DS (OFF)
GS
DS
-
V = -5V
T
= 125°C
A
Gate Leakage Current1
I
200
1
pA
nA
V
= 0V, V
=125°C
= 5V
GS
GSS
DS
T
A
Input Capacitance
C
2.5
0.1
10
pF
pF
ns
ns
ISS
Transfer Reverse Capacitance
Turn-on Delay Time
C
RSS
+
+
t
on
V
V
= 5V, R = 5KΩ
L
Turn-off Delay Time
t
off
10
= 5V, R = 5KΩ
L
Crosstalk
60
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2 of 11
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic
currents and channel/junction leakage currents. When negative
signal voltages are applied to the gate terminal, the designer/user
can depend on the EPAD MOSFET device to be controlled, modu-
lated and turned off precisely. The device can be modulated and
turned-off under the control of the gate voltage in the same manner
as the enhancement mode EPAD MOSFET and the same device
equations apply.
quad/dual N-Channel MOSFETs matched at the factory usingALD’s
proven EPAD® CMOS technology. These devices are intended for
low voltage, small signal applications.
ALD’s Electrically Programmable Analog Device (EPAD) technol-
ogy provides the industry’s only family of matched transistors with
a range of precision threshold values. All members of this family
are designed and actively programmed for exceptional matching of
device electrical characteristics. Threshold values range from -
3.50V Depletion to +3.50V Enhancement devices, including stan-
dard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V,
+0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any
customer desired value between -3.50V and +3.50V. For all these
devices, even the depletion and zero threshold transistors, ALD
EPAD technology enables the same well controlled turn-off, sub-
threshold, and low leakage characteristics as standard enhance-
ment mode MOSFETs. With the design and active programming,
even units from different batches and different date of manufacture
have well matched characteristics. As these devices are on the
same monolithic chip, they also exhibit excellent tempco tracking.
EPAD MOSFETs are ideal for minimum offset voltage and differen-
tial thermal response, and they are used for switching and amplify-
ing applications in low voltage (1V to 10V or +/-0.5V to +/-5V) or
ultra low voltage (less than 1V or +/- 0.5V) systems. They feature
low input bias current (less than 30pA max.), ultra low power
(microWatt) or Nanopower (power measured in nanoWatt) opera-
tion, low input capacitance and fast switching speed. These de-
vices can be used where a combination of these characteristics
are desired.
KEY APPLICATION ENVIRONMENT
EPAD( MOSFET Array products are for circuit applications in one
or more of the following operating environments:
* Low voltage: 1V to 10V or +/- 0.5V to +/- 5V
This EPAD MOSFETArray product family (EPAD MOSFET) is avail-
able in the three separate categories, each providing a distinctly
different set of electrical specifications and characteristics. The first
* Ultra low voltage: less than 1V or +/- 0.5V
* Low power: voltage x current = power measured in microwatt
* Nanopower: voltage x current = power measured in nanowatt
* Precision matching and tracking of two or more MOSFETs
category is the ALD110800/ALD110900 Zero-Threshold™ mode
EPAD MOSFETs. The second category is the ALD1108xx/
ALD1109xx enhancement mode EPAD MOSFETs. The third cat-
egory is the ALD1148xx/ALD1149xx depletion mode EPAD
MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1 V steps,
for example, xx=08 denotes 0.80V).
ELECTRICAL CHARACTERISTICS
The turn-on and turn-off electrical characteristics of the EPAD
MOSFET products are shown in the Drain-Source On Current vs
Drain-Source On Voltage and Drain-Source On Current vs Gate-
Source Voltage graphs. Each graph show the Drain-Source On
Current versus Drain-Source On Voltage characteristics as a func-
tion of Gate-Source voltage in a different operating region under
different bias conditions. As the threshold voltage is tightly speci-
fied, the Drain-Source On Current at a given gate input voltage is
better controlled and more predictable when compared to many
other types of MOSFETs.
The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in
which the individual threshold voltage of each MOSFET is fixed at
zero. The threshold voltage is defined as I = 1uA @ V = 0.1V
DS DS
when the gate voltage V
= 0.00V. Zero threshold devices oper-
GS
ate in the enhancement region when operated above threshold volt-
age and current level (V > 0.00V and I > 1uA) and subthresh-
GS DS
old region when operated at or below threshold voltage and cur-
rent level (V <= 0.00V and I < 1uA). This device, along with
GS
DS
other very low threshold voltage members of the product family,
constitute a class of EPAD MOSFETs that enable ultra low supply
voltage operation and nanopower type of circuit designs, applicable
in either analog or digital circuits.
EPAD MOSFETs behave similarly to a standard MOSFET, there-
fore classic equations for a n-channel MOSFET applies to EPAD
MOSFET as well. The Drain current in the linear region (V
<
DS
The ALD1108xx/ALD1109xx (quad/dual) product family features
precision matched enhancement mode EPAD MOSFET devices,
which require a positive bias voltage to turn on. Precision threshold
values such as +1.40V, +0.80V, +0.20V are offered. No conductive
channel exists between the source and drain at zero applied gate
voltage for these devices, except that the +0.20V version has a
subthreshold current at about 20nA.
V
GS
- V ) is given by:
GS(th)
I
D
= u . C
. W/L . [V
- V
- V /2] . V
DS DS
OX
GS
GS(th)
where:
u = Mobility
C
V
= Capacitance / unit area of Gate electrode
= Gate to Source voltage
OX
GS
V
= Turn-on threshold voltage
= Drain to Source voltage
W = Channel width
L = Channel length
GS(th)
The ALD1148xx/ALD1149xx (quad/dual) features depletion mode
EPAD MOSFETs, which are normally-on devices when the gate
bias voltage is at zero volt. The depletion mode threshold voltage
is at a negative voltage level at which the EPAD MOSFET turns off.
V
DS
Without a supply voltage and/or with V
MOSFET device is already turned on and exhibits a defined and
controlled on-resistance between the source and drain terminals.
= 0.0V the EPAD
GS
In this region of operation the I value is proportional to V value
DS DS
and the device can be used as gate-voltage controlled resistor.
For higher values of V where V >= V - V
DS DS GS GS(th)
, the satura-
The ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs are
different from most other types of depletion mode MOSFETs and
certain types of JFETs in that they do not exhibit high gate leakage
tion current I
is now given by (approx.):
DS
2
]
GS(th)
I
= u . C
OX
. W/L . [V
- V
DS
GS
ALD110804/ALD110904
Advanced Linear Devices
3 of 11
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY (cont.)
SUB-THRESHOLD REGION OF OPERATION
ZERO TEMPERATURE COEFFICIENT (ZTC) OPERATION
Low voltage systems, namely those operating at 5V, 3.3V or less,
typically require MOSFETs that have threshold voltage of 1V or
less. The threshold, or turn-on, voltage of the MOSFET is a voltage
below which the MOSFET conduction channel rapidly turns off. For
analog designs, this threshold voltage directly affects the operating
signal voltage range and the operating bias current levels.
For an EPAD MOSFET in this product family, there exist operating
points where the various factors that cause the current to increase
as a function of temperature balance out those that cause the cur-
rent to decrease, thereby canceling each other, and resulting in net
temperature coefficient of near zero. One of this temperature stable
operating point is obtained by a ZTC voltage bias condition, which
is 0.55V above a threshold voltage when V
= V , resulting in a
GS
DS
At or below threshold voltage, an EPAD MOSFET exhibits a turn-
off characteristic in an operating region called the subthreshold re-
gion. This is when the EPAD MOSFET conduction channel rapidly
turns off as a function of decreasing applied gate voltage. The con-
duction channel induced by the gate voltage on the gate electrode
decreases exponentially and causes the drain current to decrease
exponentially. However, the conduction channel does not shut off
abruptly with decreasing gate voltage, but decreases at a fixed rate
of approximately 116mV per decade of drain current decrease. Thus
if the threshold voltage is +0.20V, for example, the drain current is
temperature stable current level of about 68uA. For other ZTC op-
erating points, see ZTC characteristics.
PERFORMANCE CHARACTERISTICS
Performance characteristics of the EPAD MOSFET product family
are shown in the following graphs. In general, the threshold voltage
shift for each member of the product family causes other affected
electrical characteristics to shift with an equivalent linear shift in
1uA at V
= +0.20V. At V
= +0.09V, the drain current would
V
GS(th)
bias voltage. This linear shift in V
causes the subthresh-
GS
GS
GS
decrease to 0.1uA. Extrapolating from this, the drain current is
0.01uA (10nA) at V = -0.03V, 1nA at V = -0.14V, and so forth.
old I-V curves to shift linearly as well. Accordingly, the subthreshold
operating current can be determined by calculating the gate volt-
GS
GS
This subthreshold characteristic extends all the way down to cur-
rent levels below 1nA and is limited by other currents such as junc-
tion leakage currents.
age drop relative from its threshold voltage, V
.
GS(th)
RDS(ON) AT VGS=GROUND
At a drain current to be declared “zero current” by the user, the Vgs
voltage at that zero current can now be estimated. Note that using
Several of the EPAD MOSFETs produce a fixed resistance when
their gate is grounded. For ALD110800, the drain current at V
the above example, with V
= +0.20V, the drain current still
=
GS(th)
DS
0.1V is at 1uAat V = 0.0V. Thus just by grounding the gate of the
hovers around 20nA when the gate is at zero volt, or ground.
GS
ALD110800, a resistor with R
= ~100KOhm is produced.
DS(ON)
When anALD114804 gate is grounded, the drain current I = 18.5
DS
= 5.4KOhm. Similarly,
LOW POWER AND NANOPOWER
uA@ V
= 0.1V, producing R
DS
ALD114813 and ALD114835 produces 77uA and 185uA, respec-
tively, at V = 0.0V, producing R values of 1.3KOhm and
DS(ON)
When supply voltages decrease, the power consumption of a given
load resistor decreases as the square of the supply voltage. So
one of the benefits in reducing supply voltage is to reduce power
consumption. While decreasing power supply voltages and power
consumption go hand-in-hand with decreasing usefulAC bandwidth
and at the same time increases noise effects in the circuit, a circuit
designer can make the necessary tradeoffs and adjustments in any
given circuit design and bias the circuit accordingly.
GS
DS(ON)
540Ohm, respectively.
MATCHING CHARACTERISTICS
A key benefit of using matched-pair EPAD MOSFET is to maintain
temperature tracking. In general, for EPAD MOSFET matched pair
devices, one device of the matched pair has gate leakage currents,
junction temperature effects, and drain current temperature coeffi-
cient as a function of bias voltage that cancel out similar effects of
the other device, resulting in a temperature stable circuit. As men-
tioned earlier, this temperature stability can be further enhanced by
biasing the matched-pairs at Zero Tempco (ZTC) point, even though
that could require special circuit configuration and power consump-
tion design consideration.
With EPAD MOSFETs, a circuit that performs a specific function
can be designed so that power consumption can be minimized. In
some cases, these circuits operate in low power mode where the
power consumed is measure in micro-watts. In other cases, power
dissipation can be reduced to nano-watt region and still provide a
useful and controlled circuit function operation.
ALD110804/ALD110904
Advanced Linear Devices
4 of 11
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
OUTPUT CHARACTERISTICS
2500
2000
5
4
T
A
= 25°C
V
-V
=+5V
=+4V
T
= +25°C
GS GS(TH)
A
V
-V
GS GS(TH)
1500
1000
3
2
1
V
= V +4V
GS(TH)
GS
V
V
-V
=+3V
GS GS(TH)
-V
=+2V
=+1V
GS GS(TH)
500
0
V
-V
GS GS(TH)
V
= V +6V
GS(TH)
GS
0
100
10000
1000
10
0
2
4
6
8
10
DRAIN-SOURCE ON CURRENT (µA)
DRAIN-SOURCE ON VOLTAGE (V)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
FORWARD TRANSFER CHARACTERISTICS
2.5
20
V
= -3.5V
GS(TH)
= -1.3V
T
DS
= 25°C
A
2.0
V
= +10V
V
GS(TH)
15
V
= -0.4V
GS(TH)
1.5
1.0
10
5
V
= 0.0V
GS(TH)
= +0.2V
V
GS(TH)
0.5
0
V
= +1.4V
GS(TH)
V
= +0.8V
GS(TH)
0
-50 -25
25
50
75
100
125
0
-4
-2
0
6
10
2
4
8
AMBIENT TEMPERATURE (°C)
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
100000
10000
V
=0.0V
GS(TH)
T
= +25°C
=+0.1V
A
V
=0.1V
~
DS
V
1000
100
DS
Slope = 110mV/decade
1000
V
=-1.3V
GS(TH)
100
10
1
10
1
0.1
0.1
V
=-3.5V
GS(TH)
V
=+0.8V
GS(TH)
V
=+0.2V
GS(TH)
0.01
V
0.01
V
V
V
GS(th)
V
V
GS(th)
GS(th)
GS(th)
GS(th)
-0.3
GS(th)
-4
-2
-1
0
1
2
-3
-0.5
-0.4
-0.2
-0.1
GATE-SOURCE VOLTAGE (V)
GATE-SOURCE VOLTAGE (V)
ALD110804/ALD110904
Advanced Linear Devices
5 of 11
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
50
5
4
Zero Temperature
Coefficient (ZTC)
-55°C
-25°C
125°C
3
2
0°C
1
0
- 25°C
70°C
125°C
0
V
V
V
V
GS(TH)
V
V
GS(TH)
GS(TH)
GS(TH)
GS(TH)
GS(TH)
V
+4
GS(TH)
V
-1
GS(TH)
V
+1
GS(TH)
V
+2
GS(TH)
V
+3
GS(TH)
V
+0.0
+0.4
+1.0
GS(TH)
+0.2
+0.6
+0.8
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
DRAIN-SOURCE ON CURRENT vs. ON RESISTANCE
V +4
GS(TH)
100000
V
DS
D
V
A
= 0.5V
DS
= +125°C
T
= 25°C
=-4.0V to +5.4V
A
V
=+10V
10000
1000
V +3
GS(TH)
DS
T
V
I
GS
V
DS(ON)
GS
V
+2
+1
GS(TH)
100
10
1
V
T
= 0.5V
= +25°C
DS
A
V
GS(TH)
V
= 5V
DS
= +25°C
T
A
V
=+5V
V
=+0.1V
DS
DS
V
GS(TH)
V
=+1V
DS
V
= 5V
DS
= +125°C
V
DS
= R
• I
0.1
ON DS(ON)
T
A
V
-1
GS(TH)
0.01
1
0.1
10
100
1000
10000
0.1
1
10
100
1000
10000
DRAIN SOURCE ON CURRENT (µA)
ON RESISTANCE (KΩ)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
4
5
4
T
A
= 25°C
3
2
REPRESENTATIVE UNITS
V
= +10V
DS
1
3
2
1
V
= +5V
0
DS
-1
-2
-3
-4
V
= +1V
DS
0
V
V
+1
GS(TH)
V
+3
GS(TH)
V
+2
GS(TH)
V
+4
V
+5
GS(TH)
-50
-25
0
25
50
75
100
125
GS(TH)
GS(TH)
OUTPUT VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
V
+4
GS(TH)
600
D
V
DS
500
400
V
+3
GS(TH)
GS(TH)
+125°C
I
DS(ON)
V
GS
S
V
+2
300
200
100
0
0.0V ≤ V
≤ 5.0V
DS
+25°C
I
GSS
V
V
+1
GS(TH)
GS(TH)
0.1
10
100
1000
-50
0
25
50
75
100
125
1
10000
-25
ON - RESISTANCE (KΩ)
AMBIENT TEMPERATURE (°C)
ALD110804/ALD110904
Advanced Linear Devices
6 of 11
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
TRANSFER CHARACTERISTICS
1.6
1.2
0.8
0.4
0.0
5
T
DS
= 25°C
V
= -3.5V
V
A
GS(TH)
-55°C ≤ T ≤ +125°C
V
= +10V
A
= -1.3V
2.5
GS(TH)
V
= -0.4V
GS(TH)
V
= 0.0V
GS(TH)
0
-2.5
-5
V
= +0.2V
GS(TH)
V
= +1.4V
GS(TH)
V
= +0.8V
GS(TH)
1
10
100
1000
-4
-2
0
2
4
6
8
10
GATE-SOURCE VOLTAGE (V)
DRAIN SOURCE ON CURRENT (µA)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
SUBTHRESHOLD CHARACTERISTICS
2.5
0.6
V
=-3.5V
GS(TH)
2.0
1.5
1.0
0.5
0.0
0.5
0.3
V
=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
GS(TH)
25°C
V
= 0.4V
GS(th)
0.2
0.0
55°C
V
= 0.2V
GS(th)
-0.5
10000
100000
1
1000
100
10
0.1
0.1
0.2
0.5
2.0
5.0
1.0
DRAIN-SOURCE ON VOLTAGE (V)
DRAIN -SOURCE CURRENT (nA)
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
1.2
0.9
4.0
T
DS
= 25°C
A
V
= +0.1V
I
= 1.0
D µA
DS
V
= +10V
3.0
2.0
1.0
0.6
0.3
V = 1.4V
t
V = 0.8V
t
V = 0.0V
t
V = 0.2V
t
V = 0.4V
t
0.0
0
2
6
8
10
0
4
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
DRAIN -SOURCE ON CURRENT(mA)
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
2.0
1.0
0.3
0.2
0.1
I
V
= +1µA
DS
V
= 0.1V
D
= +0.1V
DS
V
= 0.0V
GS(th)
0.0
V
= -0.4V
= -1.3V
GS(th)
0
-0.1
-0.2
-1.0
-2.0
-3.0
V
GS(th)
25°C
55°C
-0.3
-0.4
V
= -3.5V
GS(th)
-4.0
-25
25
75
125
10000
10
1
0.1
1000
100
AMBIENT TEMPERATURE (OC)
DRAIN-SOURCE CURRENT (nA)
ALD110804/ALD110904
Advanced Linear Devices
7 of 11
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
10.00
4.05
0.053
0.069
1.35
S (45°)
0.004
0.014
0.007
0.385
0.140
0.010
0.018
0.010
0.394
0.160
0.10
0.35
0.18
9.80
3.50
A
1
b
C
D-16
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
0.024
0°
L
A
ø
0.50
0.010
0.020
0.25
S
A
e
1
b
S (45°)
C
H
L
ø
ALD110804/ALD110904
Advanced Linear Devices
8 of 11
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.105
0.200
3.81
0.38
1.27
0.89
0.38
0.20
18.93
5.59
7.62
2.29
7.37
2.79
0.38
0°
1.27
2.03
1.65
0.51
0.30
21.33
7.11
8.26
2.79
7.87
3.81
1.52
15°
0.015
0.050
0.035
0.015
0.008
0.745
0.220
0.300
0.090
0.290
0.110
0.015
0°
0.050
0.080
0.065
0.020
0.012
0.840
0.280
0.325
0.110
0.310
0.150
0.060
15°
A
A
1
2
b
b
1
c
D
D-16
E
S
E
1
A
2
e
A
e
1
L
L
A
1
S-16
ø
e
b
b
1
c
ø
e
1
ALD110804/ALD110904
Advanced Linear Devices
9 of 11
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
5.00
4.05
0.053
0.069
1.35
S (45°)
0.004
0.014
0.007
0.185
0.140
0.010
0.018
0.010
0.196
0.160
0.10
0.35
0.18
4.69
3.50
A
1
b
C
D-8
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
A
0.024
0°
L
A
1
e
ø
S
b
0.50
0.010
0.020
0.25
S (45°)
C
H
L
ø
ALD110804/ALD110904
Advanced Linear Devices
10 of 11
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.105
0.200
3.81
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0°
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0°
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15°
A
A
1
2
b
b
1
D
c
S
D-8
E
A
2
E
1
A
e
L
A
1
e
1
e
b
L
S-8
ø
b
1
c
ø
e
1
ALD110804/ALD110904
Advanced Linear Devices
11 of 11
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