AM3406 [AITSEMI]
N-CHANNEL ENHANCEMENT MODE;
| 型号： | AM3406 |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总8页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
FEATURES
The AM3406 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V
30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
This is a Full Green compliance
Available in SOT-23 Package
APPLICATIONS
The AM3406 is available in SOT-23 Package.
Power Management in Note book
Portable Equipment
DSC
ORDERING INFORMATION
LCD Display inverter
Battery Powered System
DC/DC Converter
Package Type
SOT-23
Part Number
AM3406E3R
E3
AM3406E3VR
P CHANNEL MOSFET
R : Tape & Reel
Note
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
N-Channel
REV1.0
- MAR 2011 RELEASED -
- 1 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV1.0
- MAR 2011 RELEASED -
- 2 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted
VDSS, Drain-Source Voltage
VGSS, Gate-Source Voltage
ID, Continuous Drain Current (TJ=150℃)
IDM, Pulsed Drain Current
30V
±20V
6.0A
10A
VGS = 10V
IS, Continuous Source Current (Diode Conduction)
PD, Power Dissipation
5.0A
TA = 25oC
1.25W
0.8W
TA = 70oC
TJ, Operation Junction Temperature
150℃
TSTG, Storage Temperature Range
-55℃ ~ 150℃
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL DATA
Symbol
RθJA
Parameter
Max
90
Unit
Thermal Resistance-Junction to Ambient
℃/W
REV1.0
- MAR 2011 RELEASED -
- 3 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted
Parameter
Static Parameters
Drain-Source Breakdown
Voltage
Symbol
Conditions
Min
30
Typ.
-
Max
-
Units
V
V(BR)DSS
VGS = 0V, ID = 250μA
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±20V
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V
TJ = 55°C
1.0
-
-
-
2.0
±100
1
V
-
-
nA
Zero Gate Voltage Drain
Current
IDSS
μA
-
-
5
On-State Drain Current
ID(ON)
RDS(ON)
Gfs
VDS ≧ -5V, VGS = -4.5V
10
-
-
-
A
mΩ
S
VGS = 10V, ID = 6.0A
20
26
Drain-source On-Resistance
VGS = 4.5V, ID = 4.8A
VDS = 15V, ID = 5.0A
-
-
27
12
33
-
Forward Transconductance
Source-Drain Doide
Diode Forward Voltage
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
VSD
IS = 1.7A, VGS = 0V
-
0.7
1.2
V
Qg
Qgs
Qgd
Ciss
Coss
-
-
-
-
-
6
-
-
-
-
-
V
DS = 20V
GS = 4.5V
V
1.1
2.5
414
60
nC
ID = 5A
VDS = 15V
VGS = 0V
pF
nS
f = 1MHz
Crss
-
49
-
Capacitance
td(on)
tr
td(off)
tf
-
-
-
-
7.5
45
10
4
-
-
-
-
V
DD = 12V
ID = 5A
GS = 10V
RG = 3Ω
Turn-On Time
Turn-Off Time
V
NOTE1: Pulse test: pulse width <= 300us, duty cycle<= 2%
NOTE2: Static parameters are based on package level with recommended wire-bonding
REV1.0
- MAR 2011 RELEASED -
- 4 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
TYPICAL CHARACTERISTICS
25°C Unless Note
1. Output Characteristics
2. Drain-Source On Resistance
3. Gate Threshold Voltage
4. Gate Charge
5. Drain Source On Resistance
6. Capacitance
REV1.0
- MAR 2011 RELEASED -
- 5 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
7. Power Dissipation
8. Drain Current
9. Thermal Transient Impedance
REV1.0
- MAR 2011 RELEASED -
- 6 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
SYMBOL
MIN
MAX
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
c
D
E
E1
e
0.950(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
θ
REV1.0
- MAR 2011 RELEASED -
- 7 -
AM3406
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servere property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- MAR 2011 RELEASED -
- 8 -
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