AM3406A [AITSEMI]
N-CHANNEL ENHANCEMENT-MODE;
| 型号： | AM3406A |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT-MODE |
| 文件： | 总7页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
DESCRIPTION
FEATURES
The AM3406A is available in SOT-23S package.
VDS = 30V
RDS(ON), VGS=4.5V, IDS@5A = 52mΩ
RDS(ON), VGS=10V, IDS@6A = 38mΩ
Available in SOT-23S Package
ORDERING INFORMATION
APPLICATION
High density cell design for ultra low
Package Type
SOT-23S
Part Number
AM3406AE3SR
AM3406AE3SVR
on-resistance
E3S
Advanced trench process technology
High power and current handling capability
V: Halogen free Package
R: Tape & Reel
Note
P CHANNEL MOSFET
SPQ: 3,000pcs/Reel
AiT provides all RoHS products
REV1.0
-MAR 2015 RELEASED -
- 1 -
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV1.0
-MAR 2015 RELEASED -
- 2 -
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
ABSOLUTE MAXIMUM RATINGS
TA=25℃
VDSS, Drain-Source Voltage
30V
±20V
6A
VGS, Gate–to–Source Voltage – Continuous
ID, Drain Current – Continuous TA=25℃
IDM, Drain Current – PulsedNOTE1
30A
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
Parameter
Maximum Power Dissipation
Symbol
PD
Limit
1.4
Units
W
Thermal Resistance, Junction–to–AmbientNOTE2
RθJA
°C/W
°C
90
Junction and Storage temperature
TJ, TSTG
-55~+150
REV1.0
-MAR 2015 RELEASED -
- 3 -
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
ELECTRICAL CHARACTERISTICS
TA=25℃
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA
30
-
-
-
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
IDSS
VDS=-24V,VGS=0V
1
μA
IGSSF
VDS=0V, VGS=20V
-
-
100
nA
Gate-Body Leakage Current,
Reverse
IGSSR
gFS
VDS=0V, VGS=-20V
VDS=5V,ID=6.9A
-
-
-
-100
-
nA
S
Forward Transconductance
ON CHARACTERISTICS NOTE 3
Gate Threshold Voltage
Static Drain–Source On–State
Resistance
15.4
VGS(th)
VDS=VGS,ID=250μA
VGS=10V,ID=6A
VGS=4.5V,ID=5A
1.0
1.5
22
35
3.0
38
52
V
-
-
RDS(ON)
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
Clss
Coss
Crss
-
-
-
610
100
77
-
-
-
VGS=0V, VDS=15V,
f=1.0MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
9
14
30
5
-
-
-
-
VDD=15V, RL=15Ω
ID=1A, VGEN=10V
RG=6Ω
Rise Time
Turn-Off Delay Time
Fall Time
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
VGS=0V, IDS=1A
-
-
-
-
1.3
3
V
A
Max. Diode Forward Current
IS
NOTE1: Repetitive Rating: Pulse width limited by the Maximum junction temperature.
NOTE2: 1-in² 2oz Cu PCB board.
NOTE3: Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2.0%.
REV1.0
-MAR 2015 RELEASED -
- 4 -
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
TYPICAL PERFORMANCE CHARACTERISTICS
1.
Transfer Characteristics
2.
On-Region Characteristics
3.
VGS(th) vs. Temperature
4.
RDS(ON) vs. ID
5.
RDS(ON) vs. VGS
REV1.0
-MAR 2015 RELEASED -
- 5 -
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm)
Millimeters
Inches
MAX
DIM
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
MIN
A
A1
b
0.035
0.001
0.015
0.003
0.11
0.044
0.004
0.02
c
0.007
0.12
D
E
0.047
0.07
0.055
0.081
0.012
0.029
0.104
10°
e
L
0.004
0.014
0.083
0°
L1
HE
θ
REV1.0
-MAR 2015 RELEASED -
- 6 -
AM3406A
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT-MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
-MAR 2015 RELEASED -
- 7 -
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