AM3412E3SR [AITSEMI]
N-CHANNEL ENHANCEMENT MODE;
| 型号： | AM3412E3SR |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总7页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM3412 is available in SOT-23S Package Type
50V/0.1A,
R
R
DS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A
DS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A
Super High dense cell design for extremely low
RDS(ON)
.
Reliable and Rugged.
Low Threshold Voltage (0.5V- 1.5V) Make it
Ideal for Low Voltage Applications.
Available in SOT-23S Package
ORDERING INFORMATION
APPLICATIONS
Power Management in DC/DC Converters,
Portable and Battery-powered Products.
Package Type
Part Number
AM3412E3SR
AM3412E3SVR
SOT-23S
E3S
SPQ: 3,000pcs/Reel
V: Halogen free Package
R: Tape & Reel
PIN DESCRIPTION
Note
AiT provides all RoHS products
REV1.0
- MAR 2018 RELEASED -
- 1 -
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV1.0
- MAR 2018 RELEASED -
- 2 -
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA=25°C, Unless otherwise noted
VDS, Drain-Source Voltage
50V
±20V
0.1A
VGS, Gate-Source Voltage
ID, Drain Current Continuous
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA=25°C, Unless otherwise noted
Parameter
Off Characteristics
Symbol
Conditions
Min
Typ
Max Units
Drain to Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=50V, VGS=0V
VDS=25V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
50
-
-
-
-
-
-
-
V
0.5
0.1
100
-100
Zero-Gate Voltage, Drain-Source
μA
-
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
IGSSF
IGSSR
-
nA
nA
-
Gate Threshold Voltage
VGS(th)
VGS=VDS, ID=1.0mA
VGS=5.0V, ID=-0.2A
VGS=2.75V, ID=0.2A
0.5
-
-
-
1.5
3.5
10
V
-
-
Static Drain-source On-Resistance
RDS(ON)
Ω
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=0.2A
-
-
2.5
V
REV1.0
- MAR 2018 RELEASED -
- 3 -
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Breakdown Voltage Variation with
Temperature
Figure 4. Gate Threshold Variation with Temperature
REV1.0
- MAR 2018 RELEASED -
- 4 -
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
Figure 5. On-Resistance Variation with Temperature
Figure 6. On-Resistance vs. Drain Current
Figure 7. On-Resistance vs. Gate-to-Source Voltage Figure 8. Source-Drain Diode Forward Voltage
REV1.0
- MAR 2018 RELEASED -
- 5 -
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm)
DIM
A
MIN
2.80
1.20
0.89
0.30
1.78
0.01
0.08
0.45
0.89
2.10
0.42
MAX
3.04
1.40
1.13
0.50
2.04
0.10
0.18
0.60
1.02
2.50
0.60
B
C
D
G
H
J
K
L
S
V
REV1.0
- MAR 2018 RELEASED -
- 6 -
AM3412
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Components (AiT) reserves the right to make changes to any its product, specifications, to discontinue
any integrated circuit product or service without notice, and advises its customers to obtain the latest version
of relevant information to verify, before placing orders, that the information being relied on is current.
AiT Components’ integrated circuit products are not designed, intended, authorized, or warranted to be
suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or server property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Components assumes to no liability to customer product design or application support. AiT warrants the
performance of its products of the specifications applicable at the time of sale.
REV1.0
- MAR 2018 RELEASED -
- 7 -
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