AM2303E3R [AITSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM2303E3R |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2303 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent RDS(ON) low gate charge and
operation gate as 2.5V.
-30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V
-30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V
-30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
This device is suitable for use as a load switch or
other general applications.
Available in SOT-23 Package
The AM3401 is available in SOT-23 Package
ORDERING INFORMATION
APPLICATIONS
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
DC/DC Converter
Package Type
SOT-23
Part Number
AM2303E3R
E3
Load Switch
AM2303E3VR
V: Halogen free Package
R: Tape & Reel
Note
P CHANNEL MOSFET
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 1 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
1
2
3
G
S
D
Gate
Source
Drain
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 2 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
V
DSS, Drain-Source Voltage
-30V
±12V
VGSS, Gate-Source Voltage
Tc=25℃
Tc=70℃
-4.3A
ID, Continuous Drain Current , VGS = -10VNOTE1
IDM, Pulsed Drain Current NOTE2
PD, Power Dissipation
-3.8A
-20A
TA=25oC
TA=70oC
1.25W
0.8W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
-55℃~150℃
-55℃~150℃
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C.
NOTE2: The data tested by pulsed , pulse width≦300uS , duty cycle≦2%
THERMAL INFORMATION
Symbol
RθJA
Max
120
80
Unit
℃/W
℃/W
RθJL
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 3 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
-30
Typ.
-
Max
-
Units
V
Static Parameters
Drain-Source
V(BR)DSS
VGS=0V,ID=-250μA
Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,ID=-250μA
VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
TJ=25°C
-0.6
-
-
-
-1.0
V
±100
nA
-
-
-
-
-1
-5
Zero Gate Voltage Drain-
Source Leakage Current
IDSS
μA
VDS=-24V,VGS=0V
TJ=55°C
VGS=-10V,ID=-4.3A
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.5A
-
-
-
50
58
73
58
65
92
Drain-source
On-ResistanceNOTE2
RDS(ON)
mΩ
Forward
GFS
VDS=-5V,ID=-4.0A
-
10
-
S
Transconductance
Source-Drain Doide
Diode Forward Voltage
Continuous Source
Current NOTE1,3
VSD
IS
IS=-1.0A,VGS=0V
-
-
-0.7
-
-1.0
-5.6
V
A
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
QG(-4.5V)
QGS
-
-
-
-
-
6.8
3.0
3.3
681
290
-
-
-
-
-
VDS=-20V, VGS=-4.5V
nC
pF
ID≡-4.0A
QGD
CISS
COSS
VDS=-12V, VGS=0V
f=1MHz
CRSS
-
112
-
tD(ON)
tR
tD(OFF)
tF
-
-
-
-
10
16
24
22
-
-
-
-
Turn-On Time
VDD=-12V, ID=-4A
nS
VGEN=-10V, RG=3.3Ω
Turn-Off Time
NOTE3: The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 4 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
25℃, unless noted
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Transfer Characteristics
5. Gate Charge
6. Drain Source Resistance
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 5 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
7. Capacitance
8. Source Drain Diode Forward
9. Power Dissipation
10. Drain Current
11. Thermal Transient Impedance
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 6 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
SYMBOL
MIN
MAX
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950(TYP.)
e1
L
1.800
0.300
0°
2.000
0.500
8°
θ
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 7 -
AM2303
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servere property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
- 8 -
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