MSA-1105 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-1105 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1105
Features
Description
05 Plastic Package
• High Dynamic Range
Cascadable50 Ω or75 Ω
Gain Block
The MSA-1105 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for high
dynamic range in either 50 or 75 Ω
systems by combining low noise
figure with high IP3. Typical
applications include narrow and
broadband linear amplifiers in
commercial and industrial systems.
• 3 dBBandwidth:
50 MHzto1.3 GHz
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 3.6 dB Typical Noise Figure
at0.5 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
The MSA-series is fabricated using
HP’s10GHzf ,25 GHzf
T
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Typical Biasing Configuration
R
bias
VCC
> 8 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 5.5 V
d
2
5965-9557E
6-458
MSA-1105 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
80 mA
550mW
+13dBm
150°C
θjc =125°C/W
–65to150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE=25°C.
3. Derate at 8 mW/°C for TC > 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.05GHz
f=0.5GHz
f=1.0GHz
dB
dB
dB
12.7
12.0
10.5
10.0
∆GP
Gain Flatness
3 dB Bandwidth[2]
f=0.1to1.0GHz
dB
± 1.0
1.3
f3 dB
GHz
Input VSWR
f=0.1to1.0GHz
f=0.1to1.0GHz
f=0.5GHz
1.5:1
1.7:1
3.6
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
17.5
30.0
200
5.5
f=0.5GHz
tD
f=0.5GHz
Vd
Device Voltage
4.4
6.6
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (GP).
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-1105-TR1
MSA-1105-STR
500
10
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-459
MSA-1105 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
.0005
.80
.26
.07
.06
.05
.06
.07
.09
.10
.11
.13
.15
.16
.18
.28
.38
.46
.53
–17
–62
19.0
13.9
12.8
12.7
12.7
12.6
12.4
12.2
12.0
11.8
11.5
11.2
10.9
10.5
8.8
8.94
4.98
4.36
4.33
4.31
4.26
4.19
4.10
4.00
3.88
3.76
3.63
3.49
3.37
2.75
2.28
1.90
1.62
171
163
174
174
170
162
154
146
138
131
123
116
109
102
72
–26.0
–16.8
–16.4
–16.3
–16.4
–16.2
–16.1
–15.8
–15.6
–15.4
–15.0
–14.7
–15.5
–14.1
–13.2
–12.1
–11.9
–11.6
.050
.144
.151
.153
.152
.155
.157
.163
.166
.171
.178
.184
.188
.197
.219
.248
.254
.262
51
15
4
.81
.26
.08
.06
.06
.08
.10
.12
.14
.17
.18
.21
.22
.24
.31
.34
.38
.40
–16
–64
–52
–48
–52
–73
–91
0.53
0.93
1.08
1.08
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.01
1.01
1.00
1.00
0.99
1.02
1.04
.005
.025
–48
.050
–38
2
.100
–41
3
.200
–58
5
.300
–74
7
.400
–91
8
–105
–116
–126
–135
–144
–151
–159
170
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
–105
–116
–128
–136
–145
–152
174
8
10
11
11
11
11
7
150
7.1
48
0
–4
–8
151
133
5.6
4.2
28
11
134
118
122
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C, ZO = 50 Ω
(unless otherwise noted)
100
16
18
17
16
T
T
T
= +85°C
= +25°C
= –25°C
C
C
C
14
Z
= 50 Ω
80
P
O
1 dB
12
10
8
13
12
60
Z
= 75 Ω
O
40
6
11
G
P
4
5
20
0
NF
2
0
4
3
.02
.05 0.1
0.5 1.0 2.0 3.0
0
2
4
6
8
–25
+25
TEMPERATURE (°C)
+85
V
(V)
FREQUENCY (GHz)
d
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
f = 0.5 GHz, Id = 60 mA.
5.5
22
I
I
I
= 70 mA
= 60 mA
= 40 mA
d
d
d
I
I
= 70 mA
= 60 mA
d
d
5.0
4.5
4.0
20
18
16
14
12
3.5
3.0
I
= 40 mA
d
0.1
0.2 0.3 0.5
1.0
2.0
0.1
0.2 0.3 0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-460
05 Plastic Package Dimensions
4
GROUND
0.030
0.76
RF OUTPUT
0.030
0.89
DIA
RF INPUT
AND DC BIAS
A
3
1
0.030 ± 0.010
0.76 ± 0.25
(4 PLCS)
2
GROUND
0.135 ± 0.015
3.42 ± 0.25
(4 PLCS)
0.030
0.76
0.020
0.51
0.050
1.27
0.145
3.68
0.008 ± 0.002
0.20 ± 0.05
0.100 ± 0.010
2.54 ± 0.25
0.0005 ± 0.010
(0.013 ± 0.25)
Notes:
(unless otherwise specified)
in
1. Dimensions are
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
6-461
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