MSA-1110 [HP]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器型号: | MSA-1110 |
厂家: | HEWLETT-PACKARD |
描述: | Cascadable Silicon Bipolar MMIC Amplifier |
文件: | 总4页 (文件大小:41K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1110
(MMIC) housed in a hermetic high
Features
• High Dynamic Range
Cascadable 50 Ω or 75 Ω
Gain Block
100 mil Package
reliability package. This MMIC is
designed for high dynamic range
in either 50 or 75 Ω systems by
combining low noise figure with
• 3 dB Bandwidth:
high IP . Typical applications
3
50 MHz to 1.6 GHz
include narrow and broadband
linear amplifiers in industrial and
military systems.
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 12 dB Typical 50 Ω Gain at
The MSA-series is fabricated using
0.5 GHz
Agilent’s 10 GHz f , 25 GHz f
T
MAX
• 3.5 dB Typical Noise Figure
at 0.5 GHz
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-1110 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
Typical Biasing Configuration
R
bias
VCC
> 8 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 5.5 V
d
2
2
MSA-1110 Absolute Maximum Ratings
Thermal Resistance[2,4]
θjc = 135°C/W
:
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
90 mA
560 mW
+13 dBm
200°C
–65 to 200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.4 mW/°C for TC > 124°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
Power Gain (|S21|2)
f = 0.1 GHz
dB
dB
11.5
12.5
±0.7
1.6
13.5
∆GP
f3 dB
Gain Flatness
3 dB Bandwidth[2]
f = 0.1 to 1.0 GHz
±1.0
GHz
Input VSWR
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.5 GHz
1.7:1
1.9:1
3.5
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.5
6.5
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f = 0.5 GHz
16.0
4.5
17.5
30.0
160
f = 0.5 GHz
tD
f = 0.5 GHz
Vd
Device Voltage
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (GP).
3
MSA-1110 Typical Scattering Parameters ( ZO = 50 Ω, TA = 25°C, Id = 60 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag Ang
Mag
Ang
k
.0005
.005
.025
.050
.100
.200
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
.83
.54
.15
.10
.08
.09
.11
.13
.16
.18
.21
.23
.25
.27
.36
.42
.47
.47
–7
–50
–78
–64
–63
–74
–85
–94
–102
–108
–114
–120
–126
–131
–153
–171
177
19.5
16.8
13.0
12.6
12.5
12.4
12.3
12.3
12.1
12.0
11.8
11.6
11.4
11.1
9.8
9.44
6.92
4.47
4.26
4.23
4.17
4.10
4.10
4.04
3.98
3.89
3.80
3.71
3.60
3.10
2.64
2.29
1.97
176
158
167
171
171
166
160
154
148
143
137
131
126
120
96
–31.9
–18.7
–16.6
–16.5
–16.5
–16.4
–16.2
–16.1
–15.9
–15.6
–15.4
–15.2
–15.0
–14.8
–13.8
–13.3
–12.5
–13.2
.025
.116
.148
.149
.150
.152
.154
.157
.161
.165
.169
.173
.178
.182
.203
.217
.236
39
34
9
5
4
4
5
6
7
8
8
8
8
8
4
1
–2
.84
.55
.15
.10
.08
.09
.12
.15
.18
.20
.23
.25
.28
.30
.37
.40
.41
.38
–7
–50
–79
–67
–66
–78
–89
–98
–106
–113
–120
–126
–132
–137
–160
–178
172
0.77
0.60
1.03
1.08
1.09
1.09
1.07
1.05
1.02
1.00
0.97
0.95
0.92
0.91
0.83
0.82
0.80
0.95
8.4
7.2
5.9
74
59
43
159
.220 –10
157
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C, ZO = 50 Ω
(unless otherwise noted)
100
16
14
14
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
1.0 GHz,
1.0 GHz
Z
= 50 Ω
80
12
10
O
12
10
8
60
Z
= 75 Ω
O
2.0 GHz
40
8
6
4
6
4
20
0
2
0
.02
.05 0.1
0.5 1.0 2.0 3.0
0
2
4
6
8
20
40
60
80
V
(V)
FREQUENCY (GHz)
I
(mA)
d
d
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
Figure 3. Power Gain vs. Current.
22
18
17
5.0
I
I
= 75 mA
= 60 mA
d
d
20
18
16
16
P
4.5
4.0
1 dB
13
12
11
G
P
5
3.5
3.0
I
I
I
= 75 mA
= 60 mA
= 40 mA
d
d
d
14
12
I
= 40 mA
d
NF
4
3
0.1
0.2 0.3 0.5
1.0
2.0
0.1
0.2 0.3 0.5
1.0
2.0
–55
+25
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
100 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
1
3
Notes:
(unless otherwise specified)
2
GROUND
in
1. Dimensions are
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.100
2.54
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.030
.76
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-9558E (11/99)
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