MSA-1110 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-1110 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1110
(MMIC) housed in a hermetic high
Features
100 mil Package
reliability package. This MMIC is
designed for high dynamic range
in either 50 or 75 Ω systems by
combining low noise figure with
• High Dynamic Range
Cascadable50 Ω or75 Ω
Gain Block
• 3 dBBandwidth:
high IP . Typical applications
3
50 MHzto1.6 GHz
include narrow and broadband
linear amplifiers in industrial and
military systems.
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 12 dB Typical 50 Ω Gain at
The MSA-series is fabricated using
0.5 GHz
HP’s10GHzf ,25 GHzf
T
MAX
• 3.5 dB Typical Noise Figure
at0.5 GHz
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-1110 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
Typical Biasing Configuration
R
bias
VCC
> 8 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 5.5 V
d
2
6-462
5965-9558E
MSA-1110 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
90 mA
560mW
+13dBm
200°C
θjc =135°C/W
–65to200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE=25°C.
3. Derate at 7.4 mW/°C for TC > 124°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
dB
11.5
12.5
± 0.7
1.6
13.5
∆GP
f3 dB
Gain Flatness
3 dB Bandwidth[2]
f=0.1to1.0GHz
± 1.0
GHz
Input VSWR
f=0.1to1.0GHz
f=0.1to1.0GHz
f=0.5GHz
1.7:1
1.9:1
3.5
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.5
6.5
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
16.0
4.5
17.5
30.0
160
f=0.5GHz
tD
f=0.5GHz
Vd
Device Voltage
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (GP).
6-463
MSA-1110 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
.0005
.005
.83
.54
.15
.10
.08
.09
.11
.13
.16
.18
.21
.23
.25
.27
.36
.42
.47
.47
–7
–50
19.5
16.8
13.0
12.6
12.5
12.4
12.3
12.3
12.1
12.0
11.8
11.6
11.4
11.1
9.8
9.44
6.92
4.47
4.26
4.23
4.17
4.10
4.10
4.04
3.98
3.89
3.80
3.71
3.60
3.10
2.64
2.29
1.97
176
158
167
171
171
166
160
154
148
143
137
131
126
120
96
–31.9
–18.7
–16.6
–16.5
–16.5
–16.4
–16.2
–16.1
–15.9
–15.6
–15.4
–15.2
–15.0
–14.8
–13.8
–13.3
–12.5
–13.2
.025
.116
.148
.149
.150
.152
.154
.157
.161
.165
.169
.173
.178
.182
.203
.217
.236
39
34
9
.84
.55
.15
.10
.08
.09
.12
.15
.18
.20
.23
.25
.28
.30
.37
.40
.41
.38
–7
–50
–79
–67
–66
–78
–89
–98
0.77
0.60
1.03
1.08
1.09
1.09
1.07
1.05
1.02
1.00
0.97
0.95
0.92
0.91
0.83
0.82
0.80
0.95
.025
–78
.050
–64
5
.100
–63
4
.200
–74
4
.300
–85
5
.400
–94
6
.500
–102
–108
–114
–120
–126
–131
–153
–171
177
7
–106
–113
–120
–126
–132
–137
–160
–178
172
.600
8
.700
8
.800
8
.900
8
1.000
1.500
2.000
2.500
3.000
8
4
8.4
74
1
7.2
5.9
59
43
–2
159
.220 –10
157
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C, ZO = 50 Ω
(unless otherwise noted)
100
16
14
14
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
1.0 GHz,
1.0 GHz
Z
= 50 Ω
80
12
10
O
12
10
8
60
Z
= 75 Ω
O
2.0 GHz
40
8
6
4
6
4
20
0
2
0
.02
.05 0.1
0.5 1.0 2.0 3.0
0
2
4
6
8
20
40
60
80
V
(V)
FREQUENCY (GHz)
I
(mA)
d
d
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
Figure 3. Power Gain vs. Current.
22
18
17
5.0
I
I
= 75 mA
= 60 mA
d
d
20
18
16
16
P
4.5
4.0
1 dB
13
12
11
G
P
5
3.5
3.0
I
I
I
= 75 mA
= 60 mA
= 40 mA
d
d
d
14
12
I
= 40 mA
d
NF
4
3
0.1
0.2 0.3 0.5
1.0
2.0
0.1
0.2 0.3 0.5
1.0
2.0
–55
+25
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
6-464
100 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
1
3
Notes:
(unless otherwise specified)
2
GROUND
in
1. Dimensions are
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.100
2.54
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.030
.76
6-465
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