MSA-1105-TR2G [AVAGO]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-1105-TR2G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSA-1105
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
ꢀ
Theꢀ MSA-1105ꢀ isꢀ aꢀ highꢀ performanceꢀ siliconꢀ bipolarꢀ
Monolithicꢀ Microwaveꢀ Integratedꢀ Circuitꢀ (MMIC)ꢀ housedꢀ
inꢀaꢀlowꢀcost,ꢀsurfaceꢀmountꢀplasticꢀpackage.ꢀThisꢀMMICꢀ
isꢀdesignedꢀforꢀhighꢀdynamicꢀrangeꢀinꢀeitherꢀ50ꢀorꢀ75ꢀΩꢀ
• HighꢀDynamicꢀRangeꢀCascadableꢀ50Ωꢀorꢀꢀ
75ΩꢀGainꢀBlock
ꢀ
• 3ꢀdBꢀBandwidth:ꢀ50ꢀMHzꢀtoꢀ1.3ꢀGHz
•ꢀ 17.5ꢀdBmꢀTypicalꢀP ꢀatꢀ0.5ꢀGHz
systemsꢀ byꢀ combiningꢀ lowꢀ noiseꢀ figureꢀ withꢀ highꢀ IP .ꢀ
1ꢀdB
3
Typicalꢀapplicationsꢀincludeꢀnarrowꢀandꢀbroadbandꢀlinearꢀ
amplifiersꢀinꢀcommercialꢀandꢀindustrialꢀsystems.
•ꢀ 3.6ꢀdBꢀTypicalꢀNoiseꢀFigureꢀatꢀ0.5ꢀGHz
•ꢀ SurfaceꢀMountꢀPlasticꢀPackage
Theꢀ MSA-seriesꢀ isꢀ fabricatedꢀ usingꢀ Avago’sꢀ 10ꢀ GHzꢀ
•ꢀ Tape-and-ReelꢀPackagingꢀOptionꢀAvailable
f ,ꢀ 25ꢀGHzꢀ f
ꢀ siliconꢀ bipolarꢀ MMICꢀ processꢀ whichꢀ
T
MAX
ꢀ
• Lead-freeꢀOptionꢀAvailable
usesꢀ nitrideꢀ self-alignment,ꢀ ionꢀ implantation,ꢀ andꢀ
goldꢀ metallizationꢀ toꢀ achieveꢀ excellentꢀ performance,ꢀ
uniformityꢀ andꢀ reliability.ꢀ Theꢀ useꢀ ofꢀ anꢀ externalꢀ biasꢀ
resistorꢀforꢀtemperatureꢀandꢀcurrentꢀstabilityꢀalsoꢀallowsꢀ
biasꢀflexibility.
05 Plastic Package
Typical Biasing Configuration
R
bias
VCC > 8 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 5.5 V
d
2
MSA-1105 Absolute Maximum Ratings
[2]
[1]
Thermal Resistance :
θ = 1ꢀ5°C/W
jc
Parameter
Absolute Maximum
80 mA
Device Current
[ꢀ,3]
Power Dissipation
550 mW
RF Input Power
Junction Temperature
Storage Temperature
Notes:
+13 dBm
150°C
–65 to 150°C
1.ꢀ Permanentꢀdamageꢀmayꢀoccurꢀifꢀanyꢀofꢀtheseꢀlimitsꢀareꢀexceeded.
2.ꢀ T ꢀ=ꢀ25°C.
CASE
3.ꢀ Derateꢀatꢀ8ꢀmW/°CꢀforꢀT ꢀ>ꢀ124°C.
C
[1]
Electrical Specifications , T = 25°C
A
Symbol
Parameters and Test Conditions: I = 60 mA, Z = 50 Ω
Units
Min.
Typ.
Max.
d
O
GP
Power Gain (|Sꢀ1| ꢀ)
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
dB
dB
dB
1ꢀ.7
1ꢀ.0
10.5
10.0
∆GP
Gain Flatness
3 dB Bandwidth[ꢀ]
f = 0.1 to 1.0 GHz
dB
1.0
1.3
f3 dB
GHz
Input VSWR
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.5 GHz
1.5:1
1.7:1
3.6
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f = 0.5 GHz
17.5
30.0
ꢀ00
f = 0.5 GHz
tD
f = 0.5 GHz
Vd
Device Voltage
4.4
5.5
6.6
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1.ꢀ Theꢀrecommendedꢀoperatingꢀcurrentꢀrangeꢀforꢀthisꢀdeviceꢀisꢀ40ꢀtoꢀ70ꢀmA.ꢀꢀ
Typicalꢀperformanceꢀasꢀaꢀfunctionꢀofꢀcurrentꢀisꢀonꢀtheꢀfollowingꢀpage.
2.ꢀ Referencedꢀfromꢀ50ꢀMHzꢀgainꢀ(GP).
Ordering Information
Part Numbers
MSA-1105-STR
MSA-1105-STRG
MSA-1105-TR1
MSA-1105-TR1G
MSA-1105-TRꢀ
MSA-1105-TRꢀG
No. of Devices
Comments
Bulk
10
100
Bulk
500
7" Reel
7" Reel
13" Reel
13" Reel
500
1500
1500
Note:ꢀꢀOrderꢀpartꢀnumberꢀwithꢀaꢀ“G”ꢀsuffixꢀifꢀlead-freeꢀoptionꢀisꢀdesired.ꢀ
ꢀ
MSA-1105 Typical Scattering Parameters (Z = 50 Ω, T = 25°C, I = 60 mA)
O
A
d
Freq.
GHz
S
11
S
Mag
S
S
22
21
12
Mag
Ang
dB
Ang
dB
Mag Ang
Mag
Ang
k
.0005
.005
.80
.ꢀ6
.07
.06
.05
.06
.07
.09
.10
.11
.13
.15
.16
.18
.ꢀ8
.38
.46
.53
–17
–6ꢀ
–48
–38
–41
–58
–74
–91
19.0
13.9
1ꢀ.8
1ꢀ.7
1ꢀ.7
1ꢀ.6
1ꢀ.4
1ꢀ.ꢀ
1ꢀ.0
11.8
11.5
11.ꢀ
10.9
10.5
8.8
8.94
4.98
4.36
4.33
4.31
4.ꢀ6
4.19
4.10
4.00
3.88
3.76
3.63
3.49
3.37
ꢀ.75
ꢀ.ꢀ8
1.90
1.6ꢀ
171
163
174
174
170
16ꢀ
154
146
138
131
1ꢀ3
116
109
10ꢀ
7ꢀ
–ꢀ6.0
–16.8
–16.4
–16.3
–16.4
–16.ꢀ
–16.1
–15.8
–15.6
–15.4
–15.0
–14.7
–15.5
–14.1
–13.ꢀ
–1ꢀ.1
–11.9
–11.6
.050
.144
.151
.153
.15ꢀ
.155
.157
.163
.166
.171
.178
.184
.188
.197
.ꢀ19
.ꢀ48
.ꢀ54
.ꢀ6ꢀ
51
15
4
.81
.ꢀ6
.08
.06
.06
.08
.10
.1ꢀ
.14
.17
.18
.ꢀ1
.ꢀꢀ
.ꢀ4
.31
.34
.38
.40
–16
–64
0.53
0.93
1.08
1.08
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.01
1.01
1.00
1.00
0.99
1.0ꢀ
1.04
.0ꢀ5
–5ꢀ
.050
ꢀ
–48
.100
3
–5ꢀ
.ꢀ00
5
–73
.300
7
–91
.400
8
–105
–116
–1ꢀ6
–135
–144
–151
–159
170
.500
–105
–116
–1ꢀ8
–136
–145
–15ꢀ
174
8
.600
10
11
11
11
11
7
.700
.800
.900
1.000
1.500
ꢀ.000
ꢀ.500
3.000
150
7.1
48
0
–4
–8
151
133
5.6
4.ꢀ
ꢀ8
11
134
118
1ꢀꢀ
Typical Performance, T = 25°C, Z = 50 Ω
A
O
(unless otherwise noted)
100
80
16
18
17
16
T
T
T
= +85C
C
C
C
14
= +25C
= –25C
Z
= 50
P
O
1 dB
12
10
8
13
12
60
Z
= 75
O
40
6
11
G
P
4
5
20
0
NF
2
0
4
3
.02
.05 0.1
0.5 1.0 2.0 3.0
0
2
4
6
8
–25
+25
TEMPERATURE (C)
+85
V
(V)
FREQUENCY (GHz)
d
Figure 3. Output Power at 1 dB Gain Compression,
Noise Figure and Power Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs. Frequency,
Id = 60 mA.
5.5
22
I = 70 mA
d
I = 60 mA
d
I = 40 mA
d
I
I
= 70 mA
= 60 mA
d
d
5.0
20
18
16
4.5
4.0
14
12
3.5
3.0
I
= 40 mA
d
0.1
0.2 0.3 0.5
1.0
2.0
0.1
0.2 0.3 0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression
vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
05 Plastic Package Dimensions
4
GROUND
0.030
0.76
RF OUTPUT
AND DC BIAS
0.030
0.89
DIA
RF INPUT
A
3
1
0.030 0.010
0.76 0.25
(4 PLCS)
2
GROUND
0.135 0.015
3.42 0.25
(4 PLCS)
0.030
0.76
0.020
0.51
0.050
1.27
0.145
3.68
0.008 0.002
0.20 0.05
0.100 0.010
2.54 0.25
0.0005 0.010
(0.013 0.25)
Notes:
(unless otherwise specified)
in
1. Dimensions are
2. Tolerances
mm
in .xxx = 0.005
mm .xx = 0.13
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢀ008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-ꢀ746EN
AV0ꢀ-1ꢀ3ꢀEN - May 15, ꢀ008
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