AT-41511-BLKG [AGILENT]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SMT, 4 PIN;![AT-41511-BLKG](http://pdffile.icpdf.com/pdf2/p00258/img/icpdf/AT-41533-BLK_1560090_icpdf.jpg)
型号: | AT-41511-BLKG |
厂家: | ![]() |
描述: | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SMT, 4 PIN 放大器 光电二极管 晶体管 |
文件: | 总10页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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General Purpose, Low Noise
NPN SiliconBipolarTransistor
Technical Data
AT-41511
AT-41533
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available[1]
Description
Hewlett-Packard’sAT-41511and
AT-41533aregeneralpurpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3 leadSOT-23,whiletheAT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
oscillator, or active mixer.
An optimum noise match near
50 ohmsat900MHzmakesthese
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
techniques.
Outline Drawing
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
EMITTER COLLECTOR
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
415
BASE
EMITTER
SOT 143 (AT-41511)
COLLECTOR
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
415
BASE
EMITTER
SOT 23 (AT-41533)
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
5965-8929E
4-134
AT-41511, AT-41533 Absolute Maximum Ratings
Thermal Resistance:[2]
Absolute
Symbol
VEBO
Parameter
Units
V
Maximum[1]
θjc=550°C/W
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
1.5
20
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 26°C.
VCBO
V
V
CEO
V
12
IC
PT
mA
mW
°C
°C
50
225
Tj
150
TSTG
-65to150
Electrical Specifications, T = 25°C
A
AT-41511
AT-41533
Symbol
Parameters and Test Conditions
Units Min Typ Max Min Typ Max
hFE
Forward Current Transfer Ratio VCE = 5 V
IC = 5 mA
-
30
150
270
30
150
270
ICBO
IEBO
Collector Cutoff Current
Emitter Cutoff Current
VCB =3V
VEB =1V
µA
µA
0.2
1.0
0.2
1.0
Characterization Information, TA = 25°C
AT-41511 AT-41533
Units Min Typ Min Typ
Symbol
Parameters and Test Conditions
Noise Figure
VCE = 5 V, IC = 5 mA
NF
f=0.9GHz
f=2.4GHz
dB
1.0
1.7
1.0
1.6
GA
P1dB
G1dB
IP3
Associated Gain
VCE = 5 V, IC = 5 mA
f=0.9GHz
f=2.4GHz
dB
15.5
11
14.5
9
Power at 1 dB Gain Compression (opt tuning) f=0.9GHz
VCE =5V, IC =25mA
dBm
dB
14.5
17.5
25
14.5
14.5
25
Gain at 1 dB Gain Compression (opt tuning)
VCE =5V, IC =25mA
f=0.9GHz
Output Third Order Intercept Point,
VCE = 5 V, IC =25 mA (opt tuning)
f=0.9GHz
dBm
dB
|S |2
Gain in 50 Ω system; VCE = 5 V, IC = 5 mA
f=0.9GHz
f=2.4GHz
13.5 15.5 10.8 12.8
7.9 5.2
21E
Ordering Information
Part Number
Increment
Comments
AT-41511-BLK
AT-41511-TR1
100
3000
Bulk
7" Reel
AT-41533-BLK
AT-41533-TR1
100
3000
Bulk
7" Reel
4-135
AT-41511, AT-41533 Typical Performance
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
25 mA
25 mA
2 mA
25 mA
10 mA
10 mA
10 mA
5 mA
5 mA
2, 5 mA
0.5
0
0.5
0
0.5
0
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 8 V.
Figure 2. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 5 V.
Figure 1. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.
20
25
20
15
10
20
PKG 11
PKG 11
10, 25 mA
5 mA
2 mA
15
20
15
15
PKG 11
PKG 33
PKG 33
10, 25 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
10
10
5 mA
2 mA
5
0
5
0
5
0
10
5
PKG 33
2.1
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 8 V.
Figure 5. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 5 V.
Figure 4. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 2.7 V.
20
15
20
15
20
25 mA
15
10
25 mA
10 mA
5 mA
10 mA
5 mA
25 mA
10
10
10 mA
5 mA
5
0
5
0
5
0
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. AT-41511 and AT-41533
P1dB vs. Frequency and Bias at
VCE = 2.7 V,withOptimalTuning.
Figure 8. AT-41511 and AT-41533
P1dB vs. Frequency and Bias at
VCE = 5 V,withOptimalTuning.
Figure 9. AT-41511 and AT-41533
P1dB vs. Frequency and Bias at
VCE = 8 V,withOptimalTuning.
4-136
AT-41511TypicalScatteringParameters,CommonEmitter,Zo =50Ω,VCE =2.7V,IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.84
0.59
0.49
0.48
0.46
0.46
0.46
0.47
0.5
-27
-102
-141
-149
-176
170
162
148
130
106
87
23.44
19.01
15.09
14.30
11.15
9.69
8.86
7.37
5.58
3.25
14.854
8.924
5.684
5.189
3.61
3.051
2.774
2.337
1.901
1.454
1.17
161
115
93
89
72
64
59
50
36
17
0
-34.89
-24.88
-22.97
-22.73
-21.21
-20.26
-19.74
-18.64
-17.14
-14.89
-12.96
0.018
0.057
0.071
0.073
0.087
0.097
0.103
0.117
0.139
0.18
76
48
43
43
44
45
45
46
45
42
37
0.95
0.65
0.51
0.49
0.44
0.43
0.42
0.42
0.41
0.4
-11
-34
-39
-39
-43
-45
-47
-51
-59
-73
-91
0.56
0.61
1.36
0.225
0.4
30
MSG
25
20
15
10
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
0.8
1.0
1.4
1.7
0.45
0.39
0.32
0.40
6
63
137
177
0.25
0.19
0.12
0.09
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 10. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.
AT-41533TypicalScatteringParameters,CommonEmitter,Zo =50Ω,VCE =2.7V,IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.78
0.35
0.23
0.21
0.20
0.22
0.23
0.26
0.30
0.37
0.44
-30
-99
23.43
16.91
12.50
11.65
8.50
7.09
6.30
4.97
3.45
14.834
7.004
4.219
3.826
2.661
2.261
2.065
1.773
1.488
1.211
1.041
155
103
84
80
64
56
51
42
30
13
-1
-33.98
-24.58
-21.21
-20.54
-17.46
-15.97
-15.09
-13.39
-11.21
-8.20
0.020
0.059
0.087
0.094
0.134
0.159
0.176
0.214
0.275
0.389
0.507
75
60
62
63
64
63
63
61
56
46
33
0.94
0.62
0.55
0.54
0.52
0.51
0.51
0.50
0.48
0.45
0.42
-12
-28
-30
-31
-36
-40
-42
-48
-58
-80
-104
-144
-154
162
144
134
118
101
80
1.66
0.35
62
-5.90
30
25
20
15
10
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
MSG
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
0.1
0.9
1.8
2.4
0.7
1.0
1.4
1.6
0.45
0.25
0.38
0.54
8
94
-159
-122
0.20
0.13
0.08
0.16
MSG
S21
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 11. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.
4-137
AT-41511TypicalScatteringParameters,CommonEmitter, Zo =50Ω, VCE =2.7V,IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.49
0.53
0.53
0.53
0.54
0.55
0.56
0.57
0.60
0.64
0.67
-91
-168
172
169
153
145
140
129
116
95
29.26
18.55
13.62
12.73
9.34
7.86
6.97
5.47
3.67
29.048
8.459
4.798
4.330
2.932
2.473
2.232
1.877
1.525
1.162
0.935
136
92
79
76
63
57
52
44
32
14
-1
-37.72
-30.46
-26.56
-25.68
-22.50
-21.01
-20.09
-18.49
-16.54
-13.98
-11.90
0.013
0.030
0.047
0.052
0.075
0.089
0.099
0.119
0.149
0.200
0.254
62
61
66
67
67
66
66
64
59
51
43
0.73
0.45
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.40
0.39
-22
-23
-26
-27
-34
-38
-41
-48
-58
-75
-96
1.30
-0.58
79
30
MSG
25
20
15
10
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.6
1.9
2.3
2.7
0.13
0.24
0.40
0.50
18
0.16
0.13
0.23
0.35
5
0
-162
-137
-122
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 12. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 25 mA.
AT-41533TypicalScatteringParameters,CommonEmitter, Zo =50 Ω,VCE =2.7V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.34
0.19
0.20
0.20
0.24
0.25
0.27
0.29
0.33
0.39
0.45
-75
-168
161
154
132
121
115
105
93
29.37
17.63
12.73
11.84
8.56
7.12
6.32
4.99
3.46
29.404
7.614
4.329
3.909
2.679
2.271
2.071
1.777
1.489
1.215
1.047
127
88
74
71
59
52
47
39
27
11
-3
-37.08
-25.68
-20.82
-19.91
-16.42
-14.85
-13.94
-12.32
-10.31
-7.66
0.014
0.052
0.091
0.101
0.151
0.181
0.201
0.242
0.305
0.414
0.517
72
76
74
74
70
67
65
61
54
42
29
0.71
0.47
0.46
0.45
0.45
0.44
0.44
0.43
0.41
0.37
0.33
-21
-20
-24
-26
-33
-38
-41
-48
-59
-81
-106
76
60
1.69
0.40
-5.73
30
MSG
25
20
15
10
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50Ω, VCE = 2.7 V, IC = 25 mA
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
0.1
0.9
1.8
2.4
1.3
1.6
1.9
2.1
0.10
0.25
0.48
0.59
24
0.12
0.11
0.19
0.37
S21
5
0
-158
-122
-101
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 13. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 25 mA.
4-138
AT-41511TypicalScatteringParameters, CommonEmitter, Zo =50Ω, VCE =5V, IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.88
0.61
0.50
0.48
0.45
0.45
0.45
0.45
0.48
0.53
0.58
-25
-96
23.47
19.31
15.49
14.70
11.59
10.13
9.31
7.85
6.06
3.77
1.91
14.918
9.234
5.948
5.433
3.796
3.210
2.921
2.469
2.009
1.544
1.246
162
116
94
90
74
66
61
52
39
19
2
-34.89
-25.04
-23.22
-22.85
-21.31
-20.45
-19.91
-18.86
-17.33
-15.09
-13.07
0.018
0.056
0.069
0.072
0.086
0.095
0.101
0.114
0.136
0.176
0.222
77
49
44
43
44
45
46
46
46
43
39
0.95
0.66
0.52
0.50
0.45
0.44
0.43
0.42
0.42
0.40
0.40
-11
-33
-38
-39
-42
-44
-46
-51
-58
-72
-90
-135
-142
-170
176
168
154
136
111
92
30
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 5 mA
25
20
15
10
MSG
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
0.1
0.9
1.8
2.4
0.8
1.0
1.4
1.7
0.46
0.39
0.34
0.39
5
60
130
173
0.30
0.22
0.13
0.09
S21
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 14. AT-41511 Gains vs.
Frequency at VCE = 5 V, IC = 5 mA.
AT-41533TypicalScatteringParameters,CommonEmitter, Zo =50Ω, VCE =5V, IC =5mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.79
0.36
0.22
0.20
0.18
0.19
0.21
0.24
0.28
0.35
0.42
-28
-94
23.48
17.15
12.77
11.93
8.77
7.34
6.56
5.22
3.68
14.932
7.200
4.349
3.948
2.746
2.328
2.128
1.823
1.527
1.240
1.062
155
104
84
81
65
58
53
44
32
14
0
-34.89
-25.35
-21.94
-21.21
-18.20
-16.65
-15.70
-14.02
-11.77
-8.61
0.018
0.054
0.080
0.087
0.123
0.147
0.164
0.199
0.258
0.371
0.491
76
61
63
64
65
65
65
63
59
50
37
0.95
0.65
0.58
0.57
0.56
0.55
0.55
0.54
0.53
0.50
0.47
-11
-25
-27
-29
-34
-37
-39
-45
-55
-74
-97
-137
-148
165
145
134
118
100
80
1.87
0.52
61
-6.18
30
25
20
15
10
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 5 mA
MSG
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
0.1
0.9
1.8
2.4
0.7
1.0
1.4
1.6
0.46
0.29
0.36
0.53
7
86
-163
-126
0.21
0.13
0.07
0.15
MSG
S21
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 15. AT-41533 Gains vs.
Frequency at VCE = 5 V, IC = 5 mA.
4-139
AT-41511TypicalScatteringParameters,CommonEmitter, Zo =50Ω, VCE =5V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.51
0.46
0.47
0.47
0.48
0.49
0.49
0.51
0.54
0.59
0.63
-74
-161
177
173
157
148
142
132
118
97
30
20
15
14
11
9
9
7
5
3
32.792
10.259
5.830
5.257
3.553
2.983
2.692
2.254
1.825
1.386
1.113
140
95
80
78
65
58
54
46
34
16
0
-39
-31
-27
-27
-23
-22
-21
-19
-17
-15
-13
0.011
0.028
0.043
0.047
0.068
0.081
0.090
0.108
0.135
0.183
0.234
65
62
66
67
68
68
67
65
61
54
47
0.80
0.51
0.48
0.48
0.47
0.48
0.48
0.48
0.47
0.46
0.46
-19
-21
-23
-24
-30
-34
-36
-42
-51
-66
-84
81
1
30
MSG
25
20
15
10
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 25 mA
MAG
Freq
GHz
Fmin
dB
Γopt
Rn
-
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.6
1.9
2.3
2.7
0.08
0.11
0.28
0.39
14
0.18
0.16
0.18
0.22
5
0
165
-153
-134
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 16. AT-41511 Gains vs.
Frequency at VCE = 5 V, IC = 25 mA.
AT-41533TypicalScatteringParameters,CommonEmitter, Zo =50Ω, VCE =5V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.37
0.13
0.13
0.13
0.17
0.19
0.20
0.23
0.27
0.33
0.39
-62
-153
163
154
128
117
111
102
90
30.00
18.46
13.56
12.68
9.38
7.93
7.14
5.80
4.25
31.606
8.375
4.764
4.305
2.945
2.493
2.274
1.949
1.632
1.331
1.147
129
89
76
73
61
54
50
42
31
14
-1
-37.72
-26.20
-21.31
-20.45
-16.95
-15.39
-14.47
-12.84
-10.84
-8.13
0.013
0.049
0.086
0.095
0.142
0.170
0.189
0.228
0.287
0.392
0.496
73
76
75
74
71
68
66
62
56
45
32
0.74
0.51
0.49
0.49
0.48
0.48
0.48
0.47
0.45
0.42
0.38
-19
-19
-23
-25
-31
-35
-38
-44
-54
-74
-97
76
60
2.48
1.19
-6.09
30
MSG
25
20
15
10
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 25 mA
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
0.1
0.9
1.8
2.4
1.3
1.6
1.9
2.1
0.08
0.19
0.42
0.55
13
0.12
0.10
0.16
0.32
S21
5
0
-170
-126
-105
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 17. AT-41533 Gains vs.
Frequency at VCE = 5 V, IC = 25 mA.
4-140
AT-41511TypicalScatteringParameters,CommonEmitter,Zo =50Ω,VCE =8V,IC =10mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.75
0.47
0.41
0.40
0.39
0.40
0.40
0.42
0.44
0.51
0.56
-36
-119
-155
-161
174
162
155
143
126
104
87
27.71
21.24
16.80
15.96
12.66
11.16
10.29
8.77
24.305
11.535
6.921
6.281
4.294
3.615
3.269
2.745
2.226
1.698
1.370
155
106
88
84
70
63
59
50
38
19
3
-37.72
-28.87
-26.20
-25.68
-23.10
-21.83
-21.11
-19.66
-17.86
-15.44
-13.39
0.013
0.036
0.049
0.052
0.070
0.081
0.088
0.104
0.128
0.169
0.214
73
53
55
56
58
59
58
58
55
50
45
0.92
0.60
0.51
0.50
0.48
0.48
0.48
0.48
0.47
0.46
0.46
-13
-27
-28
-29
-32
-35
-37
-41
-48
-61
-76
6.95
4.60
2.73
30
MSG
25
20
15
10
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 10 mA
MAG
Freq
GHz
Fmin
dB
Γopt
Rn
-
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.1
1.3
1.6
1.8
0.40
0.33
0.27
0.35
7
62
135
178
0.27
0.20
0.13
0.10
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 18. AT-41511 Gains vs.
Frequency at VCE = 8 V, IC = 10 mA.
AT-41533TypicalScatteringParameters,CommonEmitter,Zo =50Ω,VCE =8V,IC =10mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.65
0.20
0.11
0.09
0.11
0.13
0.14
0.17
0.22
0.28
0.35
-37
-100
-146
-161
144
125
116
104
91
27.45
18.60
13.89
13.03
9.77
8.34
7.53
6.20
4.66
23.576
8.509
4.947
4.482
3.081
2.611
2.379
2.041
1.710
1.396
1.204
145
97
81
78
64
58
53
45
33
16
1
-35.92
-26.20
-21.83
-20.92
-17.59
-16.03
-15.09
-13.47
-11.40
-8.61
0.016
0.049
0.081
0.090
0.132
0.158
0.176
0.212
0.269
0.371
0.476
73
69
71
70
69
67
65
62
57
47
35
0.88
0.57
0.54
0.53
0.52
0.51
0.51
0.50
0.49
0.46
0.43
-15
-23
-25
-26
-32
-35
-38
-43
-52
-71
-92
77
62
2.90
1.61
-6.45
30
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 10 mA
25
20
15
10
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
0.1
0.9
1.8
2.4
0.8
1.1
1.5
1.7
0.40
0.20
0.32
0.49
13
93
-154
-121
0.18
0.12
0.09
0.17
S21
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 19. AT-41533 Gains vs.
Frequency at VCE = 8 V, IC = 10 mA.
4-141
AT-41511TypicalScatteringParameters,CommonEmitter, Zo =50Ω, VCE =8V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.55
0.44
0.44
0.44
0.45
0.46
0.46
0.48
0.51
0.57
0.61
-65
-155
-179
176
159
150
144
133
119
99
30.44
20.69
15.83
14.95
11.55
10.03
9.14
7.61
5.78
3.39
1.49
33.264
10.832
6.190
5.588
3.779
3.173
2.865
2.401
1.945
1.477
1.187
142
96
81
78
66
59
55
46
35
17
1
-39.17
-31.37
-27.54
-26.74
-23.61
-22.16
-21.31
-19.66
-17.72
-15.09
-12.92
0.011
0.027
0.042
0.046
0.066
0.078
0.086
0.104
0.130
0.176
0.226
66
61
66
67
67
67
66
65
61
55
48
0.82
0.54
0.50
0.50
0.49
0.50
0.50
0.50
0.49
0.49
0.48
-17
-21
-22
-23
-29
-32
-35
-40
-48
-63
-80
83
30
MSG
25
20
15
10
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 25 mA
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
S21
0.1
0.9
1.8
2.4
1.6
1.9
2.3
2.7
0.08
0.10
0.22
0.32
10
0.20
0.19
0.18
0.18
5
0
100
-170
-147
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 20. AT-41511 Gains vs.
Frequency at VCE = 8 V, IC = 25 mA.
AT-41533TypicalScatteringParameters,CommonEmitter, Zo =50Ω,VCE =8V, IC =25mA
Freq.
GHz
S11
S21
Mag
S12
Mag
S22
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.41
0.11
0.10
0.10
0.14
0.16
0.17
0.20
0.24
0.30
0.37
-57
-138
168
156
126
115
108
99
30.11
18.75
13.87
12.99
9.70
8.25
7.45
6.11
4.56
32.026
8.664
4.938
4.460
3.054
2.585
2.359
2.020
1.691
1.380
1.190
130
90
77
74
62
55
51
43
32
15
0
-37.72
-26.38
-21.51
-20.63
-17.14
-15.60
-14.66
-13.03
-11.03
-8.31
0.013
0.048
0.084
0.093
0.139
0.166
0.185
0.223
0.281
0.384
0.487
73
76
75
74
71
68
66
62
56
45
33
0.76
0.52
0.50
0.50
0.49
0.49
0.49
0.48
0.46
0.43
0.39
-18
-19
-22
-24
-31
-34
-37
-43
-53
-72
-94
89
75
61
2.80
1.51
-6.25
30
MSG
25
20
15
10
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 8 V, IC = 25 mA
Freq
GHz
Fmin
dB
Γopt
Rn
-
MAG
Mag
Ang
MSG
0.1
0.9
1.8
2.4
1.3
1.6
1.9
2.1
0.07
0.12
0.36
0.51
18
0.16
0.12
0.15
0.28
S21
5
0
164
-134
-109
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 21. AT-41533 Gains vs.
Frequency at VCE = 8 V, IC = 25 mA.
4-142
Package Dimensions
SOT-143 Plastic Package
0.92 (0.036)
0.78 (0.031)
PACKAGE
MARKING
CODE
E
C
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
XXX
B
E
0.60 (0.024)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
2.04 (0.080)
1.78 (0.070)
0.15 (0.006)
0.09 (0.003)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.10 (0.004)
0.013 (0.0005)
0.69 (0.027)
0.45 (0.018)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
SOT-23 Plastic Package
1.02 (0.040)
0.89 (0.035)
0.54 (0.021)
0.37 (0.015)
3
PACKAGE
MARKING
CODE
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
XXX
1
2
2.04 (0.080)
1.78 (0.070)
0.60 (0.024)
0.45 (0.018)
TOP VIEW
3.06 (0.120)
2.80 (0.110)
0.152 (0.006)
0.066 (0.003)
1.02 (0.041)
0.85 (0.033)
0.69 (0.027)
0.45 (0.018)
0.10 (0.004)
0.013 (0.0005)
SIDE VIEW
END VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
4-143
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00258/img/page/AT-41533-BLK_1560090_files/AT-41533-BLK_1560090_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00258/img/page/AT-41533-BLK_1560090_files/AT-41533-BLK_1560090_2.jpg)
AT-41511-TR1G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SMT, 4 PIN
AGILENT
![](http://pdffile.icpdf.com/pdf1/p00055/img/page/AT-41532_286159_files/AT-41532_286159_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00055/img/page/AT-41532_286159_files/AT-41532_286159_2.jpg)
AT-41532-BLKG
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
AGILENT
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/AT-41532-TR1_1342864_files/AT-41532-TR1_1342864_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/AT-41532-TR1_1342864_files/AT-41532-TR1_1342864_2.jpg)
AT-41532-TR1G
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SC-70, 3 PIN
AVAGO
![](http://pdffile.icpdf.com/pdf2/p00233/img/page/AT-41532-TR2_1368789_files/AT-41532-TR2_1368789_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00233/img/page/AT-41532-TR2_1368789_files/AT-41532-TR2_1368789_2.jpg)
AT-41532-TR1G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
AGILENT
![](http://pdffile.icpdf.com/pdf2/p00233/img/page/AT-41532-TR2_1368789_files/AT-41532-TR2_1368789_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00233/img/page/AT-41532-TR2_1368789_files/AT-41532-TR2_1368789_2.jpg)
AT-41532-TR2G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, SC-70, 3 PIN
AGILENT
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