APT30M36B2LL_04 [ADPOW]
POWER MOS 7 R MOSFET; 功率MOS 7 R MOSFET型号: | APT30M36B2LL_04 |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | POWER MOS 7 R MOSFET |
文件: | 总5页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT30M36B2LL
APT30M36LLL
300V 84A 0.036Ω
R
POWER MOS 7 MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M36B2LL_LLL
UNIT
VDSS
ID
Drain-Source Voltage
300
84
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
336
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
568
PD
4.55
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
84
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 42A)
0.036
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMICCHARACTERISTICS
Symbol Characteristic
APT30M36B2LL_LLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
6480
1540
75
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
115
35
GS
V
= 150V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 84A @ 25°C
D
45
RESISTIVESWITCHING
15
V
= 15V
GS
31
V
= 150V
DD
I
= 84A @ 25°C
td(off)
29
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
4
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
730
765
855
845
V
= 200V, V = 15V
GS
DD
I
= 84A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
µJ
6
Turn-on Switching Energy
V
= 200V, V = 15V
GS
DD
I
= 84A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
84
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
336
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -84A)
Volts
ns
530
Reverse Recovery Time (IS = -84A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -84A, dlS/dt = 100A/µs)
Q rr
11.5
µC
dv
/
dv
5
V/ns
5
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.22
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 0.71mH, R = 25Ω, Peak I = 84A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 84A
/
≤ 700A/µs
V
R ≤ 300V T ≤ 150°C
dt
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
t
0.05
1
Duty Factor D =
/
t
2
0.1
Peak T = P
x Z + T
SINGLEPULSE
0.05
J
DM
θJC C
0
10-5
10-4
10-3
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
APT30M36B2LL_LLL
Typical Performance Curves
200
160
120
80
V
=15V
GS
RC MODEL
10V
Junction
temp. (°C)
9V
0.0145
0.0871
0.120
0.00193F
0.0167F
0.197F
8V
Power
(watts)
7.5V
7V
40
6.5V
6V
Case temperature. (°C)
0
0
V
5
10
15
20
25
30
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
250
1.4
NORMALIZED TO
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
V
= 10V
@
I
= 42A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
GS
D
1.3
1.2
1.1
1.0
200
150
100
50
V
=10V
GS
T
= +25°C
V
=20V
J
0.9
0.8
GS
T
= +125°C
J
T
= -55°C
J
0
0
V
2
4
6
8
10
0
20
40
60
80 100 120 140 160
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
90
80
70
60
50
40
1.20
1.15
1.10
1.05
1.00
0.95
0.90
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 42A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT30M36B2LL_LLL
336
20,000
10,000
5,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100
50
C
oss
1,000
500
100µS
10
5
1mS
100
10
C
rss
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
5
1
1
10
50 100
300
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
14
12
10
8
200
I
= 84A
D
100
V
=60V
DS
T =+150°C
50
J
V
=150V
T =+25°C
DS
J
V
=240V
DS
10
5
6
4
2
0
1
0
20 40 60 80 100 120 140 160 180
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
80
140
V
= 200V
DD
= 5Ω
t
d(off)
R
T
G
70
60
120
100
80
60
40
20
0
= 125°C
t
J
f
L = 100µH
V
= 200V
DD
= 5Ω
50
40
30
20
10
0
R
T
G
= 125°C
J
t
L = 100µH
r
t
d(on)
40
60
80
100
(A)
120
140
40
60
80
100
120
140
I
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2000
1500
1000
500
0
V
= 200V
DD
= 5Ω
R
T
G
E
2500
2000
1500
1000
off
= 125°C
J
L = 100µH
E
off
EON includes
diode reverse recovery.
E
on
V
I
= 200V
DD
= 84A
E
on
D
T
= 125°C
J
500
0
L = 100µH
EON includes
diode reverse recovery.
40
60
80
100
120
140
0
5
10 15 20 25 30 35 40 45 50
I
D
(A)
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT30M36B2LL_LLL
90%
10%
GateVoltage
DrainCurrent
GateVoltage
T 125°C
J
T 125°C
J
td(off)
td(on)
tr
90%
DrainVoltage
DrainCurrent
90%
tf
10%
0
5%
5%
10%
DrainVoltage
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT60DS30
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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