APT30M36LFLLG [MICROSEMI]
Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT30M36LFLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30M36B2FLL
APT30M36LFLL
300V 84A 0.036Ω
R
FET
POWER MOS 7 FREDFET
B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
• Popular T-MAX™ or TO-264 Package
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M36B2FLL_LFLL
UNIT
VDSS
ID
Drain-Source Voltage
300
84
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
336
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
568
PD
4.55
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
84
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 42A)
0.036
250
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT30M36B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
6480
1540
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
75
115
35
3
V
= 10V
Total Gate Charge
GS
V
= 150V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 84A @ 25°C
D
Qgd
45
RESISTIVESWITCHING
td(on)
tr
15
31
V
= 15V
GS
V
= 150V
DD
td(off)
29
Turn-off Delay Time
Fall Time
I
= 84A @ 25°C
D
tf
R
= 0.6Ω
4
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
730
765
855
845
Turn-on Switching Energy
V
= 200V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 84A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 200V, V = 15V
GS
DD
Turn-off Switching Energy
I
= 84A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
84
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
336
1.3
8
2
VSD
Volts
V/ns
(VGS = 0V, IS = -84A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -84A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
240
500
trr
ns
µC
Reverse Recovery Charge
(IS = -84A, di/dt = 100A/µs)
1.1
5.2
12
Qrr
Peak Recovery Current
(IS = -84A, di/dt = 100A/µs)
IRRM
Amps
22
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.22
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 0.71mH, R = 25Ω, Peak I = 84A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 84A
/
≤ 700A/µs
V
R ≤ 300 T ≤ 150°C
dt
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
t
0.05
1
Duty Factor D =
/
t
2
0.1
Peak T = P
x Z + T
SINGLEPULSE
0.05
J
DM
θJC C
0
10-5
10-4
10-3
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT30M36B2FLL_LFLL
200
160
120
80
V
=15V
GS
RC MODEL
10V
Junction
temp. (°C)
9V
0.0145
0.0871
0.120
0.00193F
0.0167F
0.197F
8V
Power
(watts)
7.5V
7V
40
6.5V
6V
Case temperature. (°C)
0
0
V
5
10
15
20
25
30
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
250
1.4
NORMALIZED TO
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
V
= 10V
@
I
= 42A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
GS
D
1.3
1.2
1.1
1.0
200
150
100
50
V
=10V
GS
T
= +25°C
V
=20V
J
0.9
0.8
GS
T
= +125°C
J
T
= -55°C
J
0
0
V
2
4
6
8
10
0
20
40
60
80 100 120 140 160
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
90
80
70
60
50
40
1.20
1.15
1.10
1.05
1.00
0.95
0.90
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 42A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT30M36B2FLL_LFLL
336
20,000
10,000
5,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100
50
C
oss
1,000
500
100µS
10
5
1mS
100
10
C
rss
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
5
1
1
10
50 100
300
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
14
12
10
8
200
I
= 84A
D
100
V
=60V
DS
T =+150°C
50
J
V
=150V
T =+25°C
DS
J
V
=240V
DS
10
5
6
4
2
0
1
0
20 40 60 80 100 120 140 160 180
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
80
140
V
= 200V
DD
= 5Ω
t
d(off)
R
T
G
70
60
120
100
80
60
40
20
0
= 125°C
t
J
f
L = 100µH
V
= 200V
DD
= 5Ω
50
40
30
20
10
0
R
T
G
= 125°C
J
t
L = 100µH
r
t
d(on)
40
60
80
100
(A)
120
140
40
60
80
100
120
140
I
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2000
1500
1000
500
0
V
= 200V
DD
= 5Ω
R
T
G
E
2500
2000
1500
1000
off
= 125°C
J
L = 100µH
E
off
EON includes
diode reverse recovery.
E
on
V
I
= 200V
DD
= 84A
E
on
D
T
= 125°C
J
500
0
L = 100µH
EON includes
diode reverse recovery.
40
60
80
100
120
140
0
5
10 15 20 25 30 35 40 45 50
I
D
(A)
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT30M36B2FLL_LFLL
90%
10%
GateVoltage
DrainCurrent
GateVoltage
T 125°C
J
T 125°C
J
td(off)
td(on)
tr
90%
DrainVoltage
90%
tf
10%
0
5%
5%
10%
DrainCurrent
DrainVoltage
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT60DS30
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
APT30M36LLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW
APT30M40B2VFR
Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
MICROSEMI
APT30M40B2VFRG
Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
MICROSEMI
APT30M40B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT30M40JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT30M40JVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT30M40LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT30M40LVFR
Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
APT30M40LVFRG
Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
APT30M40LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT30M40LVRG
Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明