APT30M36JLL_04 [ADPOW]
POWER MOS 7 R MOSFET; 功率MOS 7 R MOSFET
| 型号： | APT30M36JLL_04 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 R MOSFET |
| 文件： | 总5页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30M36JLL
300V 76A 0.036Ω
R
POWER MOS 7 MOSFET
S
S
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
G
SOT-227
"UL Recognized"
ISOTOP®
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M36JLL
UNIT
VDSS
ID
Drain-Source Voltage
300
76
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
304
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
463
PD
3.70
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
76
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 38A)
0.036
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMICCHARACTERISTICS
Symbol Characteristic
APT30M36JLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
6480
1540
75
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
115
35
GS
V
= 150V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
I
= 76A @ 25°C
D
45
RESISTIVESWITCHING
15
V
= 15V
GS
28
V
= 150V
DD
ns
µJ
I
= 76A @ 25°C
td(off)
29
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
5
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
660
790
770
740
V
= 200V, V = 15V
GS
DD
I
= 76A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 200V, V = 15V
GS
DD
I
= 76A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
76
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
304
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -76A)
Volts
ns
530
Reverse Recovery Time (IS = -76A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -76A, dlS/dt = 100A/µs)
Q rr
11.5
µC
dv
/
dv
5
V/ns
5
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.27
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 0.87mH, R = 25Ω, Peak I = 76A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 76A
/
≤ 700A/µs
V
R ≤ 300V T ≤ 150°C
dt
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.30
0.9
0.25
0.20
0.15
0.10
0.7
0.5
0.3
Note:
t
1
t
2
0.05
0
0.1
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
SINGLEPULSE
10-3
0.05
J
DM θJC
C
10-5
10-4
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT30M36JLL
200
160
120
80
V
=15V
GS
RC MODEL
0.0260
10V
Junction
temp. (°C)
9V
0.00119F
0.0354F
0.463F
8V
Power
(watts)
0.0585
0.185
7.5V
7V
40
6.5V
6V
Case temperature. (°C)
0
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
250
1.4
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@
I
= 38A
GS
D
1.3
1.2
1.1
1.0
200
150
100
50
V
=10V
GS
T
= +25°C
J
V
=20V
0.9
0.8
GS
T
= +125°C
4
J
T
= -55°C
J
0
0
2
6
8
10
0
20
40
60
80 100 120 140 160
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
80
70
60
50
40
1.20
1.15
1.10
1.05
1.00
0.95
0.90
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 38A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT30M36JLL
304
20,000
10,000
5,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100
50
C
oss
1,000
500
100µS
1mS
10
5
100
10
C
rss
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
5
1
1
10
50 100
300
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
14
12
10
8
200
I
= 76A
D
100
V
=60V
DS
T =+150°C
50
J
V
=150V
T =+25°C
DS
J
V
=240V
DS
10
5
6
4
2
0
1
0
20 40 60 80 100 120 140 160 180
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
80
140
V
= 200V
DD
= 5Ω
t
d(off)
R
T
G
70
60
120
100
80
60
40
20
0
= 125°C
t
J
f
L = 100µH
V
= 200V
DD
= 5Ω
50
40
30
20
10
0
R
T
G
= 125°C
J
t
L = 100µH
r
t
d(on)
40
60
80
100
(A)
120
140
40
60
80
100
120
140
I
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2000
1500
1000
500
0
V
= 200V
DD
= 5Ω
R
T
G
E
2500
2000
1500
1000
off
= 125°C
J
L = 100µH
E
off
EON includes
diode reverse recovery.
E
on
V
I
= 200V
DD
= 76A
E
on
D
T
= 125°C
J
500
0
L = 100µH
EON includes
diode reverse recovery.
40
60
80
100
120
140
0
5
10 15 20 25 30 35 40 45 50
I
(A)
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT30M36JLL
90%
10%
GateVoltage
GateVoltage
T 125°C
T 125°C
J
J
td(off)
td(on)
tf
tr
DrainVoltage
DrainCurrent
DrainCurrent
DrainVoltage
90%
90%
10%
5%
0
5%
10%
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT60DS30
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP®isaRegisteredTrademarkofSGSThomson. APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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